Zobrazeno 1 - 10
of 190
pro vyhledávání: '"C. R. Becker"'
Autor:
Oliver Hahn, Franziska M. Heining, Jörn Janzen, Johanna C. R. Becker, Marina Bertlich, Paul Thelen, Josef J. Mansour, Stefan Duensing, Sascha Pahernik, Lutz Trojan, Ionel V. Popeneciu
Publikováno v:
Biomedicines, Vol 8, Iss 12, p 585 (2020)
Focal therapies such as high-intensity focused ultrasound (HiFU) are an emerging therapeutic option for prostate cancer (PCA). Thermal or mechanical effects mediate most therapies. Moreover, locally administered drugs such as bicalutamide or docetaxe
Externí odkaz:
https://doaj.org/article/9e36bb06ec6c4d5bb297ca71cea649e7
Autor:
E. M. Sheregii, Renata Wojnarowska-Nowak, C. R. Becker, Malgorzata Trzyna, E. Bobko, P. Sliz, G. Tomaka, J. Grendysa
Publikováno v:
Journal of Crystal Growth. 480:1-5
Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg 1 - x Cd x Te are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D
Publikováno v:
Opto-Electronics Review. 25:188-197
The review of peculiarity of growth and experimental results of the magneto-transport measurements (longitudinal magneto-resistance R xx and the Hall resistance R xy ) over a wide interval of temperatures for several samples of Hg 1− x Cd x Te ( x
Autor:
E. M. Sheregii, C. R. Becker, D. Żak, A. W. Stadler, M. Marchewka, J. Grendysa, G. Tomaka, P. Sliz
Publikováno v:
Spin Orbitronics and Topological Properties of Nanostructures.
Autor:
Antoni Rogalski, Jarek Antoszewski, K. Jóźwikowski, Nima Dehdashti Akhavan, Lorenzo Faraone, Jarosław Wróbel, C. R. Becker, Małgorzata Kopytko, Gilberto A. Umana-Membreno
Publikováno v:
Journal of Electronic Materials. 44:158-166
Design of practically realizable unipolar HgCdTe nBn photodetectors has been studied in detail by numerical analysis. The simulations reported herein reveal that, by optimization of barrier doping, dark current levels can be reduced and collection ef
Autor:
C. R. Becker
Publikováno v:
physica status solidi (b). 251:1125-1132
The properties of HgTe/Hg1−x Cdx Te superlattices (SLs) and quantum wells, (QWs), are of fundamental interest; SLs are potentially useful for infrared opto-electronic applications and QWs have aroused much interest due to recent evidence that they
Autor:
G. Tomaka, J. Grendysa, P. Śliż, C. R. Becker, J. Polit, R. Wojnarowska, A. Stadler, E. M. Sheregii
Publikováno v:
Physical Review B. 93
Experimental results of the magnetotransport measurements (longitudinal magnetoresistance ${R}_{xx}$ and the Hall resistance ${R}_{xy}$) are presented over a wide interval of temperatures for several samples of ${\mathrm{Hg}}_{1\ensuremath{-}x}{\math
Publikováno v:
Journal of Electronic Materials. 40:1860-1866
The interface of ZnTe/Si(211) grown by molecular beam epitaxy was investigated by high-resolution transmission electron microscopy. Several types of defects such as misfit dislocations, stacking faults, agglomerations of vacancies, and precipitates w
Autor:
Yong Chang, F. Aqariden, Robert F. Klie, R. Kodama, X. J. Wang, Y.B. Hou, S. Sivananthan, C. R. Becker
Publikováno v:
Journal of Crystal Growth. 312:910-913
We demonstrate the growth of single crystal PbSe on GaAs(2 1 1)B using ZnTe as a buffer layer by molecular beam epitaxy. X-ray diffraction shows that the orientation of PbSe grown on ZnTe/GaAs(2 1 1)B is (5 1 1). Surface reconstruction was observed b
Publikováno v:
Journal of Electronic Materials. 38:1776-1780
ZnTe was grown on GaAs(211)B by molecular beam epitaxy (MBE). Structural properties and strain relaxation at the ZnTe/GaAs(211)B interface were investigated by high resolution transmission electron microscopy (HRTEM) and scanning transmission electro