Zobrazeno 1 - 2
of 2
pro vyhledávání: '"C. R. Abenathy"'
Autor:
S. J. Pearton, K. P. Lee, J. Han, A. P. Zhang, J. W. Lee, Fan Ren, C. R. Abenathy, G. T. Dang, J. Lopata, William Scott Hobson
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1846-1849
A self-aligned fabrication process for small emitter contact area (2×4 μm2) GaN/AlGaN heterojunction bipolar transistor is described. The process features dielectric-spacer sidewalls, low damage dry etching, and selected-area regrowth of GaAs(C) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb39173cc88097eb2a4a00d4c414433
https://doi.org/10.1116/1.1330260
https://doi.org/10.1116/1.1330260
Publikováno v:
Journal of The Electrochemical Society. 143:L219-L221
p + -AlGaAs is much more susceptible than n + -AlGaAs to the introduction of electrically active deep levels during exposure to electron cyclotron resonance Ar plasmas. In both materials the resistivity of thin (-0.5 μm) epitaxial layers increases r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ec06717e25f6f200a590e0742ae4e9
https://doi.org/10.1149/1.1837093
https://doi.org/10.1149/1.1837093