Zobrazeno 1 - 10
of 32
pro vyhledávání: '"C. Prindle"'
Autor:
Suchandra Hazra, Prithvi Morampudi, John C. Prindle, Dhan Lord B. Fortela, Rafael Hernandez, Mark E. Zappi, Prashanth Buchireddy
Publikováno v:
Clean Technologies, Vol 5, Iss 2, Pp 675-695 (2023)
Biomass is an excellent sustainable carbon neutral energy source, however its use as a coal/petroleum coke substitute in thermal applications poses several challenges. Several inherent properties of biomass including higher heating value (HHV), bulk
Externí odkaz:
https://doaj.org/article/81221bae6afe46eaba9e03a4d7fcb155
Publikováno v:
International Journal of Hydrogen Energy. 34:4179-4188
The hybrid copper oxide–copper sulfate water-splitting thermochemical cycle involves two principal steps: (1) hydrogen production from the electrolysis of water, SO2(g) and CuO(s) at room temperature and (2) the thermal decomposition of the CuSO4 p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36fc5e902777c1f40ab87277855d6f34
https://doi.org/10.1016/j.ijhydene.2008.12.026
https://doi.org/10.1016/j.ijhydene.2008.12.026
Autor:
E. E. Doomes, Josef Hormes, John C. Prindle, Challa S. S. R. Kumar, Yujun Song, Roland Tittsworth
Publikováno v:
The Journal of Physical Chemistry B. 109:9330-9338
The mechanistic aspects of the formation of sulfobetaine-stabilized copper nanoparticles were investigated by using in situ XANES (X-ray absorption near edge structure), UV-vis spectroscopy, and reaction calorimetry. The tetracoordinated sulfobetaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::035ff49eb35ed82a14834b7817f67869
https://doi.org/10.1021/jp044777g
https://doi.org/10.1021/jp044777g
Autor:
P. Agnello, T. Ivers, C. Warm, R. Wise, R. Wachnik, D. Schepis, S. Sankaran, J. Norum, S. Luning, Y. Li, M. Khare, A. Grill, D. Edelstein, X. Chen, D. Brown, R. Augur, S. Wu, J. Yu, R.C. Wong, J. Werking, D. Wehella-Gamage, A. Vayshenker, H. Van Meer, R. Van Den Nieuwenhuizen, C. Tian, K. Tabakman, C.Y. Sung, T. Standaert, A. Simon, J. Sim, C. Sheraw, D. Restaino, W. Rausch, R. Pal, C. Prindle, X. Ouyang, C. Ouyang, V. Ontalus, K. Nummy, D. Nielsen, L. Nicholson, A. McKnight, N. Lustig, X. Liu, M.H. Lee, D. Lea, G. Larosa, W. Landers, B. Kim, M. Kelling, S.-J. Jeng, J. Holt, M. Hargrove, S. Grunow, S. Greco, S. Gates, A. Frye, P. Fisher, A. Domenicucci, C. Dimitrakopoulos, G. Costrini, A. Chou, J. Cheng, S. Butt, L. Black, M. Belyansky, I. Ahsan, T. Adam, A. Gabor, C.-H.J. Wu, D. Yang, M. Crouse, C. Robinson, D. Corliss, C. Fonseca, J. Johnson, M. Weybright, A. Waite, H.M. Nayfeh, K. Onishi, S. Narasimha
Publikováno v:
2006 International Electron Devices Meeting.
We present a 45-nm SOI CMOS technology that features: i) aggressive ground-rule (GR) scaling enabled by 1.2NA/193nm immersion lithography, ii) high-performance FET response enabled by the integration of multiple advanced strain and activation techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf10344b83d49f15325667340363c388
https://doi.org/10.1109/iedm.2006.346879
https://doi.org/10.1109/iedm.2006.346879
Autor:
Dirk J. Gravesteijn, G. Verheijden, Lucile Broussous, Romano Hoofman, R. Chatterjee, Kathleen C. Yu, C. Prindle, Joaquim Torres, M. Assous, F. Fusalba, Vincent Arnal, L.G. Gosset, Roel Daamen
Publikováno v:
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
The present paper deals with the different techniques investigated in the whole microelectronics community to integrate air cavities, usually known as air gaps, in-between copper lines for advanced interconnects. The different integration processes w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d338eedc2e2cbd5aff1d5274a3008f20
https://doi.org/10.1109/iitc.2003.1219714
https://doi.org/10.1109/iitc.2003.1219714
Autor:
C. Wang, J. Pellerin, A. Singhal, M. Aminpur, R. Chowdhury, Russell L. Carter, C. Prindle, T. Ryan, Kurt H. Junker, J. Iacoponi, Da Zhang, B. Melnick, L. Svedberg, N. Grove, E.J. Weitzman, M.-F. Ng, B. Brennan, J. Linville, T. Lii, Charles Fredrick King, Cindy Kay Goldberg, V. Wang, Jeremy L. Martin, P. Ventzek, J. Mueller, M. Kiene, J. Werking, M. Woo, S. Usmani, A. Guvenilir, Kirk J. Strozewski, Yuri E. Solomentsev, Kathleen C. Yu, Tab A. Stephens, Dean J. Denning, Stanley M. Filipiak, F. Huang, Janos Farkas, David Smith, Narayanan C. Ramani, P. Crabtree, T. Sparks, B. Wilson, John C. Flake, I. Shahvandi, Kevin E. Cooper, S. Kim, M. Olivares, B. Eggenstein
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
The integration challenges of a low-k dielectric (k < 3) to form multi-level Cu interconnects for the next generation 0.1 /spl mu/m CMOS technology are presented. Process improvements to overcome these challenges are highlighted which include etchfro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b62c9efc1f66fc1edd1c412d7acdaf8
https://doi.org/10.1109/iitc.2002.1014870
https://doi.org/10.1109/iitc.2002.1014870
Autor:
Dean J. Denning, I. Shahvandi, B. Brennan, D. Deyo, S. Guggilla, C. Prindle, Ling Chen, C. Marcadal, U. Bhandary
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
Metalorganic chemical vapor deposition (MOCVD) titanium silicon nitride (TiSiN) has emerged as a strong candidate for a next-generation diffusion barrier material in copper/low-k dielectric back-end-of-line (BEOL) device fabrication. As ionized physi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76d562b6725d5e7ab740e33e06d02bd
https://doi.org/10.1109/iitc.2002.1014927
https://doi.org/10.1109/iitc.2002.1014927
Autor:
F. C. Prindle, William G. Hamilton, Joseph P. Davis, Charles E. Emery, Alphonse Fteley, Theodore Cooper, William E. Worthen
Publikováno v:
Transactions of the American Society of Civil Engineers. 14:184-185
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d2d078154e0a9b931260e01c7bfb784
https://doi.org/10.1061/taceat.0000551
https://doi.org/10.1061/taceat.0000551
Conference
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Akademický článek
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