Zobrazeno 1 - 10
of 49
pro vyhledávání: '"C. Portemont"'
Autor:
T. Sedoykina, A. Orlov, Jeremy Pereira, Jérémy Alvarez-Hérault, C. Portemont, Clarisse Ducruet, E. Danilkin, E. Smirnov
Publikováno v:
Microelectronic Engineering. 167:6-9
MRAM technology offers the opportunity to provide all the advantages of the most popular types of memory, such as DRAM, SRAM and FLASH with none of its disadvantages. Magnetic tunnel junctions (MTJs) based on CoFeB/MgO/CoFeB structures are very promi
Autor:
C. Portemont, I. L. Prejbeanu, Antoine Chavent, Ricardo C. Sousa, Clarisse Ducruet, Laurent Vila, Jérémy Alvarez-Hérault, Bernard Dieny
Publikováno v:
Physical Review Applied
Physical Review Applied, American Physical Society, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Physical Review Applied, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Physical Review Applied, American Physical Society, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Physical Review Applied, 2016, 6 (3), ⟨10.1103/PhysRevApplied.6.034003⟩
Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d916b4ae1024e7bb467c92f9dc7ea496
Autor:
Bernard Dieny, C. Portemont, I Lucian Prejbeanu, Clarisse Ducruet, Bernard Rodmacq, Lavinia Elena Nistor
Publikováno v:
IEEE Transactions on Magnetics. 46:1412-1415
The perpendicular magnetic anisotropy (PMA) of Pt/CoFe(B)/MgO bottom electrodes and the tunnel magnetoresistance (TMR) of CoFeB-based magnetic tunnel junctions (MTJ) have been analyzed as a function of Mg thickness for naturally oxidized barriers. Lo
Autor:
Jérémy Alvarez-Hérault, Laurent Vila, C. Portemont, A. Chavent, B. Dieny, C. Creuzet, Clarisse Ducruet, R. C. Sousa, I. L. Prejbeanu
Publikováno v:
2015 IEEE Magnetics Conference (INTERMAG).
In field written thermally assisted (TAS) MRAM, the storage layer is pinned with an antiferromag-netic layer. The writing of TAS-MRAM consists of heating the storage layer above the blocking temperature of the antiferromagnet using an injected curren
Autor:
L. Frangou, I. Joumard, Vincent Baltz, K. Akmaldinov, Jeremy Pereira, Clarisse Ducruet, C. Portemont, Jérémy Alvarez-Hérault, Bernard Dieny
Publikováno v:
IEEE Magnetics Letters
IEEE Magnetics Letters, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩
IEEE Magnetics Letters, IEEE, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩
IEEE Magnetics Letters, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩
IEEE Magnetics Letters, IEEE, 2015, 6, pp.3000404. ⟨10.1109/lmag.2015.2452891⟩
International audience; Spintronic applications rely on ferromagnetic/antiferromagnetic exchange biased bilayers. In this study, we show whether and how disordered magnetic phases, which exhibit low freezing temperatures and are located in the ferrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a23d294251493dfbc5972920483021d1
https://cea.hal.science/cea-01570114
https://cea.hal.science/cea-01570114
Autor:
C. Creuzet, Bernard Dieny, Ioan Lucian Prejbeanu, Antoine Chavent, Ricardo C. Sousa, Laurent Vila, Jérémy Alvarez-Hérault, C. Portemont, Clarisse Ducruet
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (11), pp.112403. ⟨10.1063/1.4930933⟩
Applied Physics Letters, 2015, 107 (11), pp.112403. ⟨10.1063/1.4930933⟩
Applied Physics Letters, American Institute of Physics, 2015, 107 (11), pp.112403. ⟨10.1063/1.4930933⟩
Applied Physics Letters, 2015, 107 (11), pp.112403. ⟨10.1063/1.4930933⟩
International audience; This paper investigates the effect of a controlled cooling rate on magnetic field reversal assisted by spin transfer torque (STT) in thermally assisted magnetic random access memory. By using a gradual linear decrease of the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e75da5d0cd42974d023201bf581149ae
https://hal.archives-ouvertes.fr/hal-01588205
https://hal.archives-ouvertes.fr/hal-01588205
Autor:
Ken Mackay, Julien Vidal, I. L. Prejbeanu, Claire Creuzet, C. Portemont, Jérémy Alvarez-Hérault, Antoine Chavent, Bernard Dieny, Ricardo Sousa, Jeremy Pereira
Publikováno v:
IEEE Transactions on Magnetics
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩
IEEE Transactions on Magnetics, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩
IEEE Transactions on Magnetics, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6f6b7dd986eaaf9b5d2e08c8cbf035a
https://hal.archives-ouvertes.fr/hal-02131755
https://hal.archives-ouvertes.fr/hal-02131755
Autor:
C. Creuzet, R. C. Sousa, C. Portemont, D. Lee, Sébastien Bandiera, B. Dieny, Quentin Stainer, K. Mackay, Lucien Lombard
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
Applied Physics Letters, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
Applied Physics Letters, American Institute of Physics, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
Applied Physics Letters, 2014, 105 (3), pp.032405. ⟨10.1063/1.4885352]⟩
International audience; The feasibility of 3-bits per cell storage in self-referenced thermally assisted magnetic random access memories is demonstrated both by macrospin simulations and experiments. The memory dot consists of a storage layer where C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0802c312e8b15f958243e6e6bb914bf
https://hal.archives-ouvertes.fr/hal-02042683/document
https://hal.archives-ouvertes.fr/hal-02042683/document
Autor:
K. Akmaldinov, I. Joumard, I. L. Prejbeanu, B. Dieny, C. Portemont, Clarisse Ducruet, Vincent Baltz
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2014, 115, pp.17B718. ⟨10.1063/1.4864144⟩
Journal of Applied Physics, 2014, 115, pp.17B718. ⟨10.1063/1.4864144⟩
Journal of Applied Physics, American Institute of Physics, 2014, 115, pp.17B718. ⟨10.1063/1.4864144⟩
Journal of Applied Physics, 2014, 115, pp.17B718. ⟨10.1063/1.4864144⟩
International audience; Spintronics devices and in particular thermally assisted magnetic random access memories require a wide range of ferromagnetic/antiferromagnetic (F/AF) exchange bias (EB) properties and subsequently of AF materials to fulfil d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84d1b9767a3690b44aaee0521fa8f097
https://hal.archives-ouvertes.fr/hal-01683648/file/JAP_115_17B718_(2014).pdf
https://hal.archives-ouvertes.fr/hal-01683648/file/JAP_115_17B718_(2014).pdf
Autor:
Ricardo Sousa, Clarisse Ducruet, Marie Therese Delaye, C. Portemont, Christian Papusoi, Bernard Dieny, Jeremy Herault, Jean-Pierre Nozieres, Ken Mackay, Erwan Gapihan, I Lucien Prejbeanu
Publikováno v:
IEEE Transactions on Magnetics. 46:2486-2488
Thermally assisted MRAM cells with FeMn exchange biased storage layers were successfully written using 50 ns current pulses with write power densities below 10 mW/?m2 and current densities below 1.3 ×10 6 A/cm2. These low power density values were a