Zobrazeno 1 - 10
of 213
pro vyhledávání: '"C. Petersburg"'
Autor:
Patel Reken, P. Yashar, C. Pelto, I. Tsameret, C. Petersburg, J. Longun, I. Jin, D. Ingerly, L. Rockford, Hsiao-Kang Chang, Conor P. Puls, P. Plekhanov, Muhammet Uncuer, Kevin J. Fischer, H. Kilambi
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
We describe here performance enhancement to Intel's 14nm high-performance logic technology interconnects and back end stack and introduce the SOC technology family of interconnects. Enhancement includes improved RC performance and intrinsic capacitan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5573af9d583436fc7bb7f7253372b3d1
https://doi.org/10.1109/iitc-amc.2016.7507637
https://doi.org/10.1109/iitc-amc.2016.7507637
Autor:
J. Lee, P. Bai, T. Leo, S. K.-Y. Shi, P. Vandervoorn, D. Ingerly, L. Rockford, Ramaswamy Rahul, Y.-W. Chen, Nidhi Nidhi, F. Al-Amoody, M. Jang, K. Byon, T. Rana, Curtis Tsai, A. Zainuddin, C. Quincy, Eric Karl, L. Yang, Hafez Walid M, Chetan Prasad, C. Petersburg, Olac-Vaw Roman W, K. Komeyli, A. Kumar, Chang Hsu-Yu, Anand Subramaniam, N. L. Dias, Tsung-Yuan Chang, H. Kilambi, K. Phoa, Pei-Chi Liu, Chen-Guan Lee, C.-H. Jan
Publikováno v:
VLSIC
A leading edge 14 nm SoC platform technology based upon the 2nd generation Tri-Gate transistor technology [5] has been optimized for density, low power and wide dynamic range. 70 nm gate pitch, 52 nm metal pitch and 0.0499 um2 HDC SRAM cells are the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ad023e07edda7779db811903bcb46fb
https://doi.org/10.1109/vlsic.2015.7231380
https://doi.org/10.1109/vlsic.2015.7231380
Autor:
Teğin, Emre
Publikováno v:
bilig: Journal of Social Sciences of the Turkish World; Autumn2024, Issue 111, p29-53, 25p
Autor:
Losev, A. S.1,2 (AUTHOR) aslosev2@yandex.ru, Sulimov, T. V.3 (AUTHOR) optimus260@gmail.com
Publikováno v:
JETP Letters. Apr2023, Vol. 117 Issue 7, p487-491. 5p.
Autor:
El‐Salamony, Radwa A.1 (AUTHOR) radwaelsalamony@epri.sci.eg
Publikováno v:
ChemistrySelect. 1/9/2023, Vol. 8 Issue 1, p1-20. 20p.
Autor:
R. C. Petersburg
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61b0110e8c6cf4f7ad0030699d344b9b
https://doi.org/10.4271/640137
https://doi.org/10.4271/640137
Autor:
R. C. Petersburg
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30f12a48483c4d1fac02d7326c160dca
https://doi.org/10.4271/660434
https://doi.org/10.4271/660434
Autor:
Demishev, S. V.1,2 (AUTHOR) demis@lt.gpi.ru, Samarin, A. N.1 (AUTHOR), Karasev, M. S.1 (AUTHOR), Grigoriev, S. V.3 (AUTHOR), Semeno, A. V.1 (AUTHOR)
Publikováno v:
JETP Letters. Jun2022, Vol. 115 Issue 11, p673-678. 6p.
Autor:
Witt, Chris1 (AUTHOR) walter.witt@usda.gov, Davis, Raymond J.2 (AUTHOR), Yang, Zhiqiang3 (AUTHOR), Ganey, Joseph L.4 (AUTHOR), Gutiérrez, R. J.5 (AUTHOR), Healey, Sean3 (AUTHOR), Hedwall, Shaula6 (AUTHOR), Hoagland, Serra7 (AUTHOR), Maes, Ron8 (AUTHOR), Malcolm, Karl8 (AUTHOR), Sanderlin, Jamie4 (AUTHOR), Seamans, Mark9 (AUTHOR), Jones, Gavin M.10 (AUTHOR) walter.witt@usda.gov
Publikováno v:
PLoS ONE. 3/17/2022, Vol. 17 Issue 3, p1-22. 22p.
Autor:
Lau, John H.1 John_Lau@Unimicron.com
Publikováno v:
Journal of Microelectronic & Electronic Packaging. 2021, Vol. 18 Issue 4, p145-160. 16p.