Zobrazeno 1 - 10
of 30
pro vyhledávání: '"C. Peppermüller"'
Autor:
C. Peppermüller, Norbert Schulze, Michael Laube, Reinhard Helbig, Horst Sadowski, Gerhard Pensl
Publikováno v:
Materials Science Forum. :623-626
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162337aafa5ea2df94360b8c53f29b02
https://doi.org/10.4028/www.scientific.net/msf.338-342.623
https://doi.org/10.4028/www.scientific.net/msf.338-342.623
Publikováno v:
Materials Science Forum. :853-856
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::149077c2fba1046bd73f269bed327b78
https://doi.org/10.4028/www.scientific.net/msf.338-342.853
https://doi.org/10.4028/www.scientific.net/msf.338-342.853
Publikováno v:
Materials Science Forum. :611-614
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ea6f853dfa89d23e80493bc7588a06
https://doi.org/10.4028/www.scientific.net/msf.338-342.611
https://doi.org/10.4028/www.scientific.net/msf.338-342.611
Autor:
Gerard Martinez, Jan Zeman, C. Peppermüller, Reinhard Helbig, Zhonghui Chen, F. Engelbrecht, C.Q. Chen
Publikováno v:
Journal of Applied Physics. 87:3800-3805
Photothermal ionization spectroscopy (PTIS) measurements were carried out on a free-standing, high purity and high quality 4H–SiC epitaxial layer at various temperatures. The two step photothermal ionization process is clearly reflected in the temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52e68e9799450e2d2d5e9764beb2a34a
https://doi.org/10.1063/1.372417
https://doi.org/10.1063/1.372417
Autor:
G. Wellenhofer, Reinhard Helbig, Ulrich Rössler, Gerard Martinez, F. Engelbrecht, C. Peppermüller, Jan Zeman
Publikováno v:
physica status solidi (b). 211:69-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04e62cea75ad24353a15c1e32c0baafb
https://doi.org/10.1002/(sici)1521-3951(199901)211:1<69::aid-pssb69>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199901)211:1<69::aid-pssb69>3.0.co
Autor:
Ulrich Rössler, C. Peppermüller, Reinhard Helbig, G. Wellenhofer, Gerard Martinez, F. Engelbrecht, Jan Zeman
Publikováno v:
Physical Review B. 56:7348-7355
Photoluminescence measurements on 6$H$-SiC doped with nitrogen have been performed under hydrostatic pressure up to 50 kbar at low temperature $(T$=29$\ifmmode\pm\else\textpm\fi{}$2 K). The observed emission lines ${S}_{0}$, ${R}_{0}$, ${P}_{0}$, ${S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d5919b866c03de23f0a4213d4679e4
https://doi.org/10.1103/physrevb.56.7348
https://doi.org/10.1103/physrevb.56.7348
Publikováno v:
Diamond and Related Materials. 6:1440-1444
Aluminium doped 6H-SiC epilayers on a p + doped 6H-SiC substrate were irradiated with total neutron doses of 9.4 × 10 19 cm −2 , 3.5 × 10 20 cm −2 , and 6.4 × 10 20 cm −2 respectively. A donor species is produced by a nuclear reaction involv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eceb14abbd24c478faffb2a77901d19
https://doi.org/10.1016/s0925-9635(97)00072-1
https://doi.org/10.1016/s0925-9635(97)00072-1
Autor:
Margareta K. Linnarsson, C. Peppermüller, Adolf Schöner, Kurt Rottner, Nils Nordell, Reinhard Helbig
Publikováno v:
Scopus-Elsevier
The incorporation of hydrogen during vapor phase epitaxy was investigated using secondary ion mass spectroscopy, low temperature photoluminescence, and capacitance-voltage measurements. It was found that hydrogen incorporation is strongly dependent o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59a0b696bef1d50ed181593bb8982310
https://doi.org/10.1016/s0925-9635(97)00106-4
https://doi.org/10.1016/s0925-9635(97)00106-4
Autor:
Gerard Martinez, F. Engelbrecht, Reinhard Helbig, G. Wellenhofer, C. Peppermüller, Jan Zeman, Ulrich Rössler
Publikováno v:
physica status solidi (b). 198:81-86
Photoluminescence experiments on 6H-SiC doped with nitrogen have been performed at low temperature (T = (29 ± 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S0, R0, P0, S02, and R02 emission lines related to the neutr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cceb0965b5be0762d174c2113c4a4694
https://doi.org/10.1002/pssb.2221980111
https://doi.org/10.1002/pssb.2221980111
Publikováno v:
Journal of Applied Physics. 80:3739-3743
Aluminum‐doped 6H‐SiC epilayers were implanted with phosphorus and subsequently annealed in a temperature range from 1400 to 1700 °C. The annealing behavior of implanted phosphorus atoms was studied by the Hall effect, admittance spectroscopy, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bb2b246010dccf950b30eb61d03ce29
https://doi.org/10.1063/1.363325
https://doi.org/10.1063/1.363325