Zobrazeno 1 - 10
of 45
pro vyhledávání: '"C. Parlog"'
Publikováno v:
Key Engineering Materials. :1131-1134
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575fcad4152d0cdb9bf09f7539e38d71
https://doi.org/10.4028/www.scientific.net/kem.132-136.1131
https://doi.org/10.4028/www.scientific.net/kem.132-136.1131
Publikováno v:
Key Engineering Materials. :1183-1186
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc5c578d1a024efa23d0811ec220d99
https://doi.org/10.4028/www.scientific.net/kem.132-136.1183
https://doi.org/10.4028/www.scientific.net/kem.132-136.1183
Publikováno v:
Journal of Materials Science. 31:3639-3642
Pb(Zr0.53Ti0.47)O3 (PZT) thin films, prepared by sol-gel techniques and deposited on to Si/SiO2/Ti/Pt substrates, have been subjected to thermal annealing in a range of temperatures from 550–800 °C. The crystallization behaviour and phase coexiste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea9fea027862c2074457c9a385e8793e
https://doi.org/10.1007/bf00352771
https://doi.org/10.1007/bf00352771
Autor:
C. Parlog, Valentin S. Teodorescu, Adelina Ianculescu, Mariuca Gartner, Petre Osiceanu, F. Moise
Publikováno v:
Ceramics International. 22:95-99
Coloured TiO2(Ni2+) thin coatings doped with transitional metals (Ni) were deposited on different substrates (silicon wafers, glass, aluminum) by the sol-gel dip coating process. Complementary techniques (XPS, SE, TEM, XRD, Absorption Spectroscopy) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984614a60a8af0f1854b5a620ea172d9
https://doi.org/10.1016/0272-8842(95)00062-3
https://doi.org/10.1016/0272-8842(95)00062-3
Publikováno v:
Thin Solid Films. 234:561-565
TiO 2 (Ln) films deposited by the sol-gel and dip coating technique on Si wafers and soda-lime glass as substrates have been characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. Amo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66d3e8407ecfc9a924aadbe0ba1bcc95
https://doi.org/10.1016/0040-6090(93)90332-j
https://doi.org/10.1016/0040-6090(93)90332-j
Publikováno v:
Journal of Non-Crystalline Solids. 151:109-114
SiO2Sb2O3 films 600–800 A thick were spin-coated on polycrystalline silicon from a sol prepared from tetraethylorthosilicate and antimony trichloride. One hour heat treatment at 500, 1000 and 1150°C resulted in crack-free, vitreous, homogeneous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ff548de9e9c46ba0a36eefb867e590
https://doi.org/10.1016/0022-3093(92)90016-d
https://doi.org/10.1016/0022-3093(92)90016-d
Publikováno v:
2008 International Semiconductor Conference.
The admittance- voltage characteristics of MIS structures with TiO2(La) dielectric films, have been measured in the 100 Hz-100 kHz test voltage frequency range. It has been established that the dielectric constant of these dielectric films increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6f0504717275c6c6cccf9963b12948c
https://doi.org/10.1109/smicnd.2008.4703390
https://doi.org/10.1109/smicnd.2008.4703390
Autor:
Octavian Buiu, H. Dascalu, Cornel Cobianu, Cristian Savaniu, A. van den Berg, C. Parlog, Béla Pécz, Maria Zaharescu
Publikováno v:
Scopus-Elsevier
Sensors and actuators. B: Chemical, 1997(43), 114-120. Elsevier
Sensors and actuators. B: Chemical, 1997(43), 114-120. Elsevier
Undoped and Sb-doped SnO2 sol–gel derived thin films have been prepared for the first time from tin (IV) ethoxide precursor and SbCl3 in order to be utilised for gas sensing applications where porous silicon is used as a substrate. Transparent, cra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12f866a68580a4b44635fbedb672b3c1
https://doi.org/10.1109/smicnd.1996.557469
https://doi.org/10.1109/smicnd.1996.557469
Publikováno v:
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).
1 MHz C-V and G-V characteristics of undoped and doped with La TiO/sub 2/ films prepared by sol-gel technique were measured. It was found that low concentration of La in TiO/sub 2/ leads to an increase of the dielectric permittivity and a decrease of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9283a3af4bf161e589c61e8428f5041
https://doi.org/10.1109/smicnd.1998.732350
https://doi.org/10.1109/smicnd.1998.732350
Publikováno v:
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
SnO/sub 2/ sol-gel derived thin films doped simultaneously with platinum and antimony are obtained and reported for the first time. Transparent, crack-free layers, deposited on silicon or porous silicon (PS) substrates were obtained with antimony dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec6b82883da2829e46a84b4a17a38af
https://doi.org/10.1109/smicnd.1997.651591
https://doi.org/10.1109/smicnd.1997.651591