Zobrazeno 1 - 10
of 104
pro vyhledávání: '"C. Paranthoen"'
Autor:
C. Paranthoen, G. Brevalle, Christophe Levallois, Pascal Turban, Charles Cornet, N. Chevalier, Hervé Folliot, M. Perrin, Mehdi Alouini, A. Le Corre
Publikováno v:
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2021, 33 (2), pp.69-72. ⟨10.1109/LPT.2020.3044457⟩
IEEE Photonics Technology Letters, 2021, 33 (2), pp.69-72. ⟨10.1109/LPT.2020.3044457⟩
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2021, 33 (2), pp.69-72. ⟨10.1109/LPT.2020.3044457⟩
IEEE Photonics Technology Letters, 2021, 33 (2), pp.69-72. ⟨10.1109/LPT.2020.3044457⟩
International audience; We present the first demonstration of a vertical cavity surface emitting laser (VCSEL) based on InAs quantum dots (QDs) on InP. A very high density of 10 11 cm −2 per QD layer, and a thin spacing layer of 15 nm are used to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fee61ca21ee5065073106c900c353fcc
https://hal.archives-ouvertes.fr/hal-03101472
https://hal.archives-ouvertes.fr/hal-03101472
Akademický článek
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Autor:
A. Shuaib, N. Chevalier, C. Levallois, A. Le Corre, J. P. Gauthier, C. Paranthoen, Charles Cornet, Olivier Durand
Publikováno v:
Thin Solid Films
Thin Solid Films, 2011, 519 (18), pp.6178-6182. ⟨10.1016/j.tsf.2011.04.111⟩
Thin Solid Films, Elsevier, 2011, 519 (18), pp.6178-6182. ⟨10.1016/j.tsf.2011.04.111⟩
Thin Solid Films, 2011, 519 (18), pp.6178-6182. ⟨10.1016/j.tsf.2011.04.111⟩
Thin Solid Films, Elsevier, 2011, 519 (18), pp.6178-6182. ⟨10.1016/j.tsf.2011.04.111⟩
International audience; In this work, we report a study of hydrogenated amorphous silicon (a-SiH) films deposited by radio frequency magnetron sputtering for application in Vertical Cavity Surface Emitting Lasers (VCSEL) elaboration. The influence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f780e135443e1ca44ff8f55de4faaa9
https://doi.org/10.1016/j.tsf.2011.04.111
https://doi.org/10.1016/j.tsf.2011.04.111
Autor:
L. Anet-Neto, M. Gay, L. Bramerie, C. Peucheret, Y. Frignac, J.-C. Simon, M. Thual, M. Joindot, C. Levallois, C. Paranthoen, S. Joshi, N. Chimot, F. Lelarge, P. Chanclou
Publikováno v:
OSA Publishing
Optical Fiber Communication Conference (OFC 2015)
Optical Fiber Communication Conference (OFC 2015), Mar 2015, Los Angeles, California, United States. pp.M3J.5, ⟨10.1364/OFC.2015.M3J.5⟩
OFC
Scopus-Elsevier
Optical Fiber Communication Conference (OFC 2015)
Optical Fiber Communication Conference (OFC 2015), Mar 2015, Los Angeles, California, United States. pp.M3J.5, ⟨10.1364/OFC.2015.M3J.5⟩
OFC
Scopus-Elsevier
International audience; We experimentally demonstrate the joint use of OFDM and channel flattening effect provided by a Fabry-Perot filter to allow higher than 25 Gbit/s direct intensity modulated, directly detected transmission over up to 75 km SSMF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abe66e76e6a97dadf03d48085a176b72
https://hal.archives-ouvertes.fr/hal-01136425/file/AnetNeto_ofc_15_M3J.5.pdf
https://hal.archives-ouvertes.fr/hal-01136425/file/AnetNeto_ofc_15_M3J.5.pdf
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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Publikováno v:
Journal of Physics: Condensed Matter. 14:12301-12309
An experimental and theoretical comparative study of InAs quantum dots grown on (001) and (113)B InP substrates is performed. The difference between the optical transitions in the dots on the two substrates is attributed to strain effects. The influe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d36ece8d6b4edb40197df4e6cbbe3609
https://doi.org/10.1088/0953-8984/14/47/306
https://doi.org/10.1088/0953-8984/14/47/306
Autor:
Olivier Durand, J. P. Gauthier, O. Dehaese, Hervé Folliot, N. Chevalier, A. Shuaib, Mathieu Perrin, C. Paranthoen, J.-M. Lamy, A. Le Corre, C. Levallois
Publikováno v:
Optics Express
Optics Express, Optical Society of America-OSA Publishing, 2012, 20 (15), pp.16832-16837. ⟨10.1364/OE.20.016832⟩
Optics Express, 2012, 20 (15), pp.16832-16837. ⟨10.1364/OE.20.016832⟩
Optics Express, Optical Society of America-OSA Publishing, 2012, 20 (15), pp.16832-16837. ⟨10.1364/OE.20.016832⟩
Optics Express, 2012, 20 (15), pp.16832-16837. ⟨10.1364/OE.20.016832⟩
International audience; Polarization controlled quantum dashes (QDHs) Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.6 µm grown on InP(001) are investigated and compared with a quantum well (QW) similar VCSEL. Polarization stability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::294e2341162fd1638d4f1dbfc28eeb83
https://hal.archives-ouvertes.fr/hal-00717931
https://hal.archives-ouvertes.fr/hal-00717931
Autor:
Hervé Folliot, N. Chevalier, Christophe Labbé, S. Salman, Antoine Létoublon, C. Paranthoen, J. Le Pouliquen, Nicolas Bertru, Tony Rohel, A. Le Corre
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, Elsevier, 2012, 177 (11), pp.882-886. ⟨10.1016/j.mseb.2012.03.053⟩
Materials Science and Engineering: B, 2012, 177 (11), pp.882-886. ⟨10.1016/j.mseb.2012.03.053⟩
Materials Science and Engineering: B, Elsevier, 2012, 177 (11), pp.882-886. ⟨10.1016/j.mseb.2012.03.053⟩
Materials Science and Engineering: B, 2012, 177 (11), pp.882-886. ⟨10.1016/j.mseb.2012.03.053⟩
International audience; The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51998df4ea6ee58d552980c9130d2848
https://hal.archives-ouvertes.fr/hal-00698574
https://hal.archives-ouvertes.fr/hal-00698574
Autor:
A. Le Corre, Olivier Dehaese, Slimane Loualiche, Bertrand Lambert, Gilles Patriarche, C. Paranthoen, N. Bertru
Publikováno v:
Applied Physics Letters. 78:1751-1753
A procedure of InAs/InP quantum dots elaboration emitting at 1.55 μm by gas source molecular beam epitaxy is described. It is based on a modification of the capping layer growth which is deposited in two steps, separated by a growth interruption und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8b6f2ae1ac61029c3e97095fc06a704
https://doi.org/10.1063/1.1356449
https://doi.org/10.1063/1.1356449
Autor:
Hervé Folliot, A. Le Corre, C. Paranthoen, J.-M. Lamy, Slimane Loualiche, Christophe Levallois, Soline Boyer-Richard, Nicolas Chevalier
Publikováno v:
Optical and Quantum Electronics
Optical and Quantum Electronics, 2008, 40 (14-15), pp.1193-98. ⟨10.1007/s11082-009-9306-1⟩
Optical and Quantum Electronics, Springer Verlag, 2008, 40 (14-15), pp.1193-98. ⟨10.1007/s11082-009-9306-1⟩
Optical and Quantum Electronics, 2008, 40 (14-15), pp.1193-98. ⟨10.1007/s11082-009-9306-1⟩
Optical and Quantum Electronics, Springer Verlag, 2008, 40 (14-15), pp.1193-98. ⟨10.1007/s11082-009-9306-1⟩
International audience; The design of an electrically pumped InGaAs quantum well based vertical cavity surface emitting laser (VCSEL) on InP substrate is presented. Such optically pumped VCSELs have already been demonstrated. To design electrically p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55cdd2dc5353d9d243846e55e24a4e32
https://hal.science/hal-00483143
https://hal.science/hal-00483143