Zobrazeno 1 - 7
of 7
pro vyhledávání: '"C. Paola Murcia"'
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Establishing the reliability of photovoltaic (PV) modules is challenging because of several failure mechanisms that can be triggered during outdoor exposure. Accelerated reliability testing has been proven to be an efficient strategy for assessing th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afb1c95835da37b8188de1124db417ac
https://doi.org/10.1109/pvsc.2018.8547610
https://doi.org/10.1109/pvsc.2018.8547610
Autor:
Jean Hummel, Emmanuel Van Kerschaver, Dilip Patel, Yafu Lin, Simeon C. Baker-Finch, Frederic Dross, Evelyn Schmich, Wibke Wittmann, Oun-Ho Park, Kirsten Cabanas-Holmen, C. Paola Murcia, Venus Noorai, Paul A. Basore, Kate Fisher
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
A design concept supported by numerical device modeling is presented for a p-type IBC cell with screen-printed aluminum for both contact polarities. Applying such a design to Cz silicon appears to offer cell efficiency exceeding 20%. The key enabling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f82075390bebf3cd695988ce168f9dee
https://doi.org/10.1109/pvsc.2013.6744289
https://doi.org/10.1109/pvsc.2013.6744289
Autor:
Kevin Shreve, Christopher W. Leitz, Allen Barnett, C. Paola Murcia, Ruiying Hao, Anthony Lochtefeld
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Epitaxial lateral overgrowth (ELO) has been used to achieve a reduced p-n junction area for thin Si solar cells with the goal of achieving increased voltage. The n-Si absorber is grown by ELO on the p+ Si substrate. In this work, a novel ELO mask is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea3b8d2fedb4f43bdfe059228dd7705
https://doi.org/10.1109/pvsc.2011.6186228
https://doi.org/10.1109/pvsc.2011.6186228
Autor:
Kevin Shreve, C. Paola Murcia, Anthony Lochtefeld, Ruiying Hao, Allen Barnett, Ji-Soo Park, Tim Creazzo, M. Curtin
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Thin silicon (Si) solar cells have the potential of having high performance due to lower bulk recombination which leads to high open circuit voltage [1]. It has been reported that the potential advantages of n type Si include longer lifetime, easier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad2b28b3461267d4e59b5d9c18eabe3
https://doi.org/10.1109/pvsc.2010.5615875
https://doi.org/10.1109/pvsc.2010.5615875
Autor:
Anthony Lochtefeld, Kevin Shreve, C. Paola Murcia, Tim Creazzo, M. Curtin, Ruiying Hao, Allen Barnett
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
The value of a high performance thin silicon solar cell is based on high open circuit voltage (Voc) which is highly dependent upon surface and interface recombination. A microelectronic approach with the series and parallel fabrication of different d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619a0ee3a97cebbc02ac01020f21746e
https://doi.org/10.1109/pvsc.2010.5616090
https://doi.org/10.1109/pvsc.2010.5616090
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
High open circuit voltage (V OC ) is a potential benefit of thin silicon solar cells. A new thin silicon solar cell structure is proposed using silicon-on-insulator (SOI) technology that investigates the properties of high voltage in thin silicon des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9612181286baff359292dd6e18503381
https://doi.org/10.1109/pvsc.2009.5411219
https://doi.org/10.1109/pvsc.2009.5411219
Autor:
Ruiying Hao, Anthony Lochtefeld, Christiana B. Honsberg, C. Paola Murcia, Allen Barnett, Tim Creazzo, Ji-Soo Park, Tom Biegala
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291bcaf718c0f103bdb40b5c514e21a1
https://doi.org/10.1109/pvsc.2009.5411132
https://doi.org/10.1109/pvsc.2009.5411132