Zobrazeno 1 - 10
of 15
pro vyhledávání: '"C. P. Tigges"'
Publikováno v:
Journal of Materials Research. 21:3168-3179
Sputter-deposited, Al/Pt multilayer thin films of various designs exhibited rapid, self-propagating, high-temperature reactions. With reactant layers maintained at ∼21 °C prior to ignition and films adhered to oxide-passivated silicon substrates,
Publikováno v:
Physica C: Superconductivity. 172:413-422
Substantial differences in the superconducting transition, both in width and onset temperature, for the same structure-type have been observed in “pseudo-flux” grown crystals in the Tl-Ca-Ba-Cu-O system. These differences have been attributed to
Publikováno v:
International Technical Digest on Electron Devices.
The magnitude of band-gap narrowing for GaAs-based alloys was calculated, and these results were included in one-dimensional heterojunction device models for strained In/sub 0.15/Ga/sub 0.85/As quantum-well modulation-doped field-effect transistors (
Autor:
B. E. Hammons, Thomas M. Brennan, C. P. Tigges, Richard P. Schneider, Paul L. Gourley, Anthony E. McDonald
Publikováno v:
Applied Physics Letters. 62:1736-1738
We report the growth of new fractal quantum‐well structures and the first studies of their optical properties. In these (Al,Ga)As structures the composition is varied in a fractal sequence between layers to create a highly branched, self‐similar
Publikováno v:
Applied Physics Letters. 57:1015-1017
Cyclotron resonance (CR) of two‐dimensional holes is observed in the magneto transmission of circularly polarized far‐infrared radiation through two InAs0.15Sb0.85/InSb strained‐layer superlattice samples at 4.2 K. Effective masses are (0.034±
Autor:
David S. Ginley, R. J. Baughman, C. P. Tigges, Eugene L. Venturini, James F. Kwak, B. Morosin
Publikováno v:
Applied Physics Letters. 57:517-519
We have measured for the first time the temperature‐dependent anisotropic resistivity of several Tl2Ca2Ba2Cu3Ox single crystals. The resistivity ratio between the c axis and the a‐b plane orientations in the best crystals is approximately 60 at r
Publikováno v:
Semiconductor Science and Technology. 5:S192-S194
The light holes in InSb are characterised using a Shubnikov-de Haas technique by exploiting the type II band offset of an InAs0.15Sb0.85/InSb strained-layer superlattice. The data are analysed to determine the effective masses and g factors as a func
Autor:
Jordan M. Berg, C. P. Tigges, Albert G. Baca, Steven R. Kurtz, V. Kasisomayajula, Mark Holtz, Insha Ahmad, A. A. Allerman
Publikováno v:
Applied Physics Letters. 86:173503
We report micro-Raman studies of self-heating in an AlGaN∕GaN heterostructure field-effect transistor using below (visible 488.0nm) and near (UV 363.8nm) GaN band-gap excitation. The shallow penetration depth of the UV light allows us to measure te
Publikováno v:
Electronics Letters. 26:972
Charge retention in floating gate InAlAs/InGaAs/InP field effect transistors is limited by lateral electron motion along the storage channel, a different direction for motion than found for AlAs/GaAs devices. Storage times as a function of temperatur
Publikováno v:
Solid-State Electronics. 32:1509-1512
The energy relaxation rate of light in-plane holes in InAs .15 Sb .85 /InSb quantum wells has been measured using a Shubnikov-de Haas technique. In this Type II system, the holes reside in the InSb layers; strain reverses the heavy-light hole orderin