Zobrazeno 1 - 10
of 297
pro vyhledávání: '"C. P. Hains"'
Autor:
A. T. Newell, J. V. Logan, R. A. Carrasco, Z. M. Alsaad, C. P. Hains, J. M. Duran, G. Ariyawansa, G. Balakrishnan, D. Maestas, C. P. Morath, S. D. Hawkins, A. Hendrickson, P. T. Webster
Publikováno v:
Applied Physics Letters. 122
The effect of majority carrier concentration and minority carrier lifetime on the performance of mid-wave infrared ( λ cutoff = 5.5 μ m ) nBn detectors with variably doped InGaAs/InAsSb type-II superlattice absorbers is investigated. The detector l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e59b3f2619223c2cb05a68298502a200
https://doi.org/10.1063/5.0136409
https://doi.org/10.1063/5.0136409
Autor:
C. P. Hains, D. M. Shima, A. Mansoori, Noel Dawson, Emma J. Renteria, Sadhvikas Addamane, L. R. Dawson, Ganesh Balakrishnan, T. J. Rotter
Publikováno v:
Journal of Crystal Growth. 439:104-109
Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f28dc6fcf7b746518b8ce042819e3b1
https://doi.org/10.1016/j.jcrysgro.2016.01.010
https://doi.org/10.1016/j.jcrysgro.2016.01.010
Publikováno v:
Infrared Physics & Technology. 70:40-43
Steady-state photocapacitance measurements were used to characterize GaSb incorporated with In, As, and a control sample. Evidence of a trap level at 0.55 eV was observed for all samples. The change in the capacitance for the sample with indium was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a75f47fefefad45e49bbcc287b4091d3
https://doi.org/10.1016/j.infrared.2014.11.009
https://doi.org/10.1016/j.infrared.2014.11.009
Autor:
D. M. Shima, C. P. Hains, Emma J. Renteria, Ayse Muniz, Ganesh Balakrishnan, Sadhvikas Addamane
Publikováno v:
Journal of Electronic Materials. 44:1327-1331
The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf9e08811adf3965da6b8d95e4d3d37
https://doi.org/10.1007/s11664-015-3625-8
https://doi.org/10.1007/s11664-015-3625-8
Autor:
Sadhvikas Addamane, A. Mansoori, C. P. Hains, Emma J. Renteria, Ganesh Balakrishnan, D. M. Shima
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
A flexible, lightweight GaSb solar cell has been attempted. The thin-film cell was bonded to a flexible carrier and isolated from the GaAs substrate by using epitaxial lift-off technique. The characteristics of the thin-film metamorphic GaSb cells ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a83380e5e305b64dc7c3b23f0b1f5cf
https://doi.org/10.1109/pvsc.2016.7750049
https://doi.org/10.1109/pvsc.2016.7750049
1220–1280-nm Optically Pumped InAs Quantum Dot-Based Vertical External-Cavity Surface-Emitting Laser
Autor:
C. P. Hains, Alexander R. Albrecht, T. J. Rotter, F. T. Jaeckel, Kevin J. Malloy, P. Ahirwar, Luke F. Lester, Andreas Stintz, V. Patel, Ganesh Balakrishnan
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:1787-1793
We report an InAs quantum dot-based optically pumped vertical external-cavity surface-emitting laser (VECSEL), with a continuously variable emission wavelength from 1220 to 1280 nm through the use of epitaxial gradient across the wafer. We demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebf4dbb2690be27bd9b97af894fd307
https://doi.org/10.1109/jstqe.2011.2144958
https://doi.org/10.1109/jstqe.2011.2144958
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
We demonstrate the integration of 3µm thick GaSb PN junctions with CVD diamond heat spreaders. The GaSb diodes are grown metamorphically on a GaAs substrate, bonded to CVD diamond by a solder process and isolated from the GaAs substrate by wet etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d5e9939934f4e324bf0e31c93ead38c
https://doi.org/10.1109/pvsc.2015.7356234
https://doi.org/10.1109/pvsc.2015.7356234
Autor:
C. P. Hains, Erik H. Anderson, Przemyslaw Wachulak, Ganesh Balakrishnan, Jorge J. Rocca, Carmen S. Menoni, Christopher Brown, Erik B. Malm, W. Chao, Mario C. Marconi, Huiwen Xu, Nils Monserud
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319006956
We demonstrate a versatile table-top holography setup capable of acquiring single-shot soft X-ray holograms with a 10–90 % knife edge spatial resolution of 170±26 nm and 1 ns temporal resolution. A Fresnel zone plate is used to create the referenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a238ce0bd7542e0f6c08559b5e2d41a
https://doi.org/10.1007/978-3-319-00696-3_26
https://doi.org/10.1007/978-3-319-00696-3_26
Autor:
C. P. Hains, Ganesh Balakrishnan, J. M. Yarborough, Jerome V. Moloney, Yushi Kaneda, Yi-Ying Lai, Stephan W. Koch, T. J. Rotter, Jörg Hader
Publikováno v:
IEEE Photonics Technology Letters. 22:1253-1255
A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e699acc52dfae1b79151f958bfb2b47
https://doi.org/10.1109/lpt.2010.2052596
https://doi.org/10.1109/lpt.2010.2052596
Autor:
C. P. Hains, Sadhvikas Addamane, P. Ahirwar, S. P. R. Clark, Jörg Hader, Ganesh Balakrishnan, Yi-Ying Lai, Alexandre Laurain, L. R. Dawson, Jerome V. Moloney, D. M. Shima, Robert Bedford, T. J. Rotter
Publikováno v:
Vertical External Cavity Surface Emitting Lasers (VECSELs) III.
The antimonide based vertical external cavity surface emitting lasers (VECSELs) operating in the 1.8 to 2.8 Tm wavelength range are typically based on InGaAsSb/AlGaAsSb quantum wells on AlAsSb/GaSb distributed Bragg reflectors (DBRs) grown lattice-ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1bccd089631e251d15d8b863ce41c0
https://doi.org/10.1117/12.2005301
https://doi.org/10.1117/12.2005301