A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests

Autor: D. Wieland, S. Ofner, M. Stabentheiner, B. Butej, C. Koller, J. Sun, A. Minetto, K. Reiser, O. Häberlen, M. Nelhiebel, M. Glavanovics, D. Pogany, C. Ostermaier

Publikováno v: 2023 IEEE International Reliability Physics Symposium (IRPS).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23685ce8ed2e8d043551c9a9adbaa715
https://doi.org/10.1109/irps48203.2023.10117943

Bluthochdrucktherapie bei Patienten mit CKD

Autor: J. Hoyer, C. Ostermaier, J. Mann

Publikováno v: Der Nephrologe. 17:17-25

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a26712f8a7d50ecdeaac669966f18f26
https://doi.org/10.1007/s11560-021-00545-8

Matching in-situ and ex-situ recorded stress gradients in an AlxGa1−xN Heterostructure: Complementary wafer curvature analyses in time and space

Autor: Michael Reisinger, C. Ostermaier, Johannes Zechner, Jozef Keckes, Werner Ecker, Bernhard Sartory, I. Daumiller, M. Tomberger

Publikováno v: Scripta Materialia. 147:50-54

In-situ wafer curvature measurements and ex-situ ion-beam layer removal method are used to evaluate residual stress depth profiles in a 1.8 μm thick AlxGa1 − xN heterostructure on Si(111) by evaluating substrate surface curvatures and deflections

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::748208fae0fb5a27e53badb860f5c367
https://doi.org/10.1016/j.scriptamat.2017.12.016

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Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering

Autor: C. Ostermaier, G. Pozzovivo, J.-F. Carlin, B. Basnar, W. Schrenk, A. M. Andrews, Y. Douvry, C. Gaquiere, J.-C. De Jaeger, L. Tóth, B. Pecz, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik, Jisoon Ihm, Hyeonsik Cheong

Publikováno v: American Institute of Physics Conference Proceedings, 1399
30th International Conference on the Physics of Semiconductors, ICPS-30
30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.905-906, ⟨10.1063/1.3666669⟩

We investigated a 2 nm thin InAlN/AlN barrier after recessing of a GaN cap on top of it and Ir gate metallization. Detailed analysis of the recess process revealed practically no damage until the formation of an etch‐resistant barrier layer produci

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::014c8c7695184dc1565ba88e8ce6e962
https://hal.archives-ouvertes.fr/hal-00800884