Zobrazeno 1 - 10
of 18
pro vyhledávání: '"C. O. Jung"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01b16a7c16ce663d20ea5289ee5dcdb5
https://doi.org/10.1201/9781003069621-62
https://doi.org/10.1201/9781003069621-62
Publikováno v:
Physics of Plasmas. 3:2788-2796
Experimental measurements taken in a large magnetoplasma show that a simple double half‐turn antenna will excite m=1 helicon waves with wavelengths from 10–60 cm. Increased ionization in the center of the downstream plasma is measured when the ax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6598a4724227e6b4c11b1f4ce8c7b815
https://doi.org/10.1063/1.871712
https://doi.org/10.1063/1.871712
Publikováno v:
Vacuum. 42:349-352
The development of defects in high-dose oxygen implanted silicon-on-insulator (SIMOX) material during thermal ramping and annealing was directly studied by weak beam and high resolution electron microscopy. The ramping and annealing cycle was simulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd7c9b2cd5282cc61e4ce34e45728ee8
https://doi.org/10.1016/0042-207x(91)90052-k
https://doi.org/10.1016/0042-207x(91)90052-k
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:644-645
In the last decade, oxygen implanted silicon-on-insulator material (SIMOX: Separation by IMplantation of OXygen) has been extensively studied, due to its potential advantages of increased speed and radiation hardness in integrated circuits. SIMOX mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3642ce0836e47f56592b1600f15a74f7
https://doi.org/10.1017/s0424820100176356
https://doi.org/10.1017/s0424820100176356
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:578-579
Oxygen implanted silicon-on-insulator material, SIMOX, (Separation by IMplanted Oxygen) provides improved speed and radiation hardness over bulk silicon for integrated circuits which are built on the thin superficial Si layer above the buried oxide l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04501cb69371e27711b59cf5c465fa2d
https://doi.org/10.1017/s0424820100176022
https://doi.org/10.1017/s0424820100176022
Autor:
D.L. Meier, Shuo Wang, G. H. Schwuttke, Stephen Krause, Dieter K. Schroder, C. O. Jung, K. Joardar
Publikováno v:
IEEE Transactions on Electron Devices. 35:911-918
The electrical and structural properties of dendritic silicon have been measured and compared with solar cell efficiencies. The twin planes in the web and their effect on minority carrier diffusion length were of particular interest. The starting mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbaebfcf0106d164069209645f67da94
https://doi.org/10.1109/16.3344
https://doi.org/10.1109/16.3344
Publikováno v:
Applied Physics Letters. 53:63-65
The structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material was directly studied by high‐resolution transmission electron microscopy. Epitaxially aligned precipitates 5–25 nm in size were loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a1a9ffdb3b57ba56b0ba898400b652
https://doi.org/10.1063/1.100568
https://doi.org/10.1063/1.100568
Publikováno v:
MRS Proceedings. 107
The formation and structure of defects and precipitates in high-dose oxygen implanted silicon-on-insulator material was directly studied by weak beam and high resolution electron microscopy. In as-implanted material, the edge of the oxygen implant pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d0b82808d0e1e84e115d6685c024fc
https://doi.org/10.1557/proc-107-93
https://doi.org/10.1557/proc-107-93
Publikováno v:
MRS Proceedings. 131
The growth of thin Si films by RF glow discharge undergoes a transition from amorphous to microcrystalline as power density is increased. This results in a substantial change in the film's electrical conductivity and activation energy for electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f47f63f888c70071fe85fc27b657080
https://doi.org/10.1557/proc-131-269
https://doi.org/10.1557/proc-131-269
Publikováno v:
MRS Proceedings. 53
Oxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc681e4bbe7e2061d26f3cf3676e2f2
https://doi.org/10.1557/proc-53-257
https://doi.org/10.1557/proc-53-257