Zobrazeno 1 - 10
of 223
pro vyhledávání: '"C. O. Jeong"'
Autor:
C. O. Jeong, Eun Gu Lee, Je-Hun Lee, Hyun Ruh, D. H. Kim, T. K. Hong, C. H. Kang, Seungmin Lee, D. M. Han, J. G. Lee
Publikováno v:
Metals and Materials International. 14:631-635
This study examined the time dependence of the microstructural evolution and resistivity of Cu(B) alloy thin films deposited on a Ti underlayer during rapid thermal annealing at 500°C. The growth of bimodal distributed grains began at approximately
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7620a94fbca483bc4a9ab90646bfb9ba
https://doi.org/10.3365/met.mat.2008.10.631
https://doi.org/10.3365/met.mat.2008.10.631
Autor:
C. O. Jeong, N. S. Roh, S. G. Kim, H. S. Park, C. W. Kim, D. S. Sakong, J. H. Seok, K. H. Chung, W. H. Lee, Dongwen Gan, Paul S. Ho, B. S. Cho, B. J. Kang, H. J. Yang, Y. K. Ko, J. G. Lee
Publikováno v:
Journal of Electronic Materials. 31:610-614
The Ag-alloy films have been investigated as source/drain materials applicable to thin-film transistor liquid-crystal displays (TFT-LCDs). The Ag-alloy consisting of 0.9at.%Pd, 1.7at.%Cu (designated APC) showed a resistivity that was lower than one-h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827054b0727210f78f4198e15408c267
https://doi.org/10.1007/s11664-002-0132-5
https://doi.org/10.1007/s11664-002-0132-5
Publikováno v:
Computers & Industrial Engineering. 30:523-530
This article presents the software tool ERIS (ETRI Reliability Information System) to provide design engineers with a computerized reliability design and evaluation tool. We overview the reliability design activities for telecommunication systems and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d712d9f7b72affb9fcdeabd2b91c679c
https://doi.org/10.1016/0360-8352(96)00007-1
https://doi.org/10.1016/0360-8352(96)00007-1
Autor:
Raić, K. T.1 (AUTHOR) karlo@tmf.bg.ac.rs
Publikováno v:
Surface Engineering. Nov2016, Vol. 32 Issue 11, p823-828. 6p.
Autor:
D M Han, C O Jeong, Y H Bae, Changsoo Kim, E G Lee, J. G. Lee, Hyun Ruh, K B Lee, K W Lee, K H Jeong
Publikováno v:
Semiconductor Science and Technology. 27:015021
The effect of the Ni content (2?18 at.% Ni) in Al thin films on their resistivity, hillock formation and Al3Ni compound formation was investigated. The as-deposited Al?Ni-alloy films showed high elastic strains which increased with increasing Ni cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::813c5e41c43cc7087132aedceb5270fa
https://doi.org/10.1088/0268-1242/27/1/015021
https://doi.org/10.1088/0268-1242/27/1/015021
Autor:
So Yeon Kim, B. S. Cho, Dong-Hyun Kim, Sang Jin Kim, Je-Hun Lee, H. J. Yang, Y. K. Ko, Changsoo Kim, S. K. Lim, Hyunjung Shin, Myung Mo Sung, J. G. Lee, C. O. Jeong, Jang-Sik Lee, Yang-Ho Bae, H. J. Bang
Publikováno v:
Journal of Applied Physics. 100:113705
A templated Cu/Co bilayer gate electrode was fabricated using the combined method of consecutive and selective chemical vapor deposition (CVD), and octadecyltrichlorosilane (OTS) microcontact printing techniques. Soft lithographically patterned self-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b14820771d622238020f058048e4d0c
https://doi.org/10.1063/1.2396796
https://doi.org/10.1063/1.2396796
Autor:
H. S. Kong, N. S. Roh, K. H. Chung, C. W. Kim, Jean H. Song, D. G. Kim, Y. B. Park, D. J. Kwon, S. G. Kim, C. O. Jeong, H. S. Park
Publikováno v:
SID Symposium Digest of Technical Papers. 33:1038
In order to simplify a-Si TFT array manufacturing process, advanced 4 mask process of low resistant metal and new pixel electrode with improved unit process was developed. Slit photolithography with continuous dry etching process on the basis of meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff67bc0198c20955d8f6c9d8fe63c80
https://doi.org/10.1889/1.1830120
https://doi.org/10.1889/1.1830120
Publikováno v:
Journal of Applied Physics; 11/21/2023, Vol. 134 Issue 19, p1-27, 27p
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