Výsledky vyhledávání - "C. Nunes de Carvalho"

Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films

Autor: A. Amaral, M. Fernandes, C. Nunes de Carvalho, Pedro Brogueira, Eduardo Alves, Manuela Vieira, Guilherme Lavareda, N.P. Barradas, Yuri Vygranenko

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::155ee664c051202fb741b53688167c93

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Optical and photoconductive properties of indium sulfide fluoride thin films

Autor: A. Amaral, C. Nunes de Carvalho, N.P. Barradas, Manuela Vieira, Eduardo Alves, Guilherme Lavareda, Yuri Vygranenko, Pedro Brogueira

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radio-frequency plasma-enhanced rea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bd14839740bcbf5b05a8f962742e6af

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Dependence of optical properties on composition of silicon carbonitride thin films deposited at low temperature by PECVD

Autor: Eduardo Alves, C. Nunes de Carvalho, N.P. Barradas, Yuri Vygranenko, A. Amaral, Pedro Brogueira, Guilherme Lavareda

Publikováno v: Journal of Non-Crystalline Solids. 551:120434

a-SiCN:H thin films were deposited at 150°C by PECVD using silane, methane and ammonia as precursor gases, with a SiH4:H2 dilution of 1:9. RBS and ERDA were used for determining material composition. The concentration of silicon, carbon and nitrogen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ffb4dc8d3c50847ada6849f9f34a50a9
https://doi.org/10.1016/j.jnoncrysol.2020.120434

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Dopant transfer from poly-si thin films to c-Si: An alternative technique for device processing

Autor: Ana Amaral, L. Ricardo, C. Nunes de Carvalho, Guilherme Lavareda

Publikováno v: Materials Science in Semiconductor Processing. 42:210-214

An alternative technique for production of devices which uses both silicon crystalline wafers (p-type) and heavy doped amorphous silicon thin films (n-type) is reported. The amorphous silicon acts as a finite source of dopant and is deposited (at low

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d905cc33de495b92cc50d939e1c00fa0
https://doi.org/10.1016/j.mssp.2015.09.006

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Etchability dependence of InOx and ITO thin films by plasma enhanced reactive termal evaporation on structural properties and deposition conditions

Autor: Vânia André, Guilherme Lavareda, Miguel Fernandes, Ana Amaral, Pedro Brogueira, Yuri Vygranenko, C. Nunes de Carvalho

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

The authors gratefully acknowledge T. Duarte for the X-ray diffraction facilities, "Fundacao para a Ciencia e a Tecnologia" for funding through a pluriannual contract with CeFEMA (UID/CTM/04540/2013) and fellowship (SFRH/BPD/102217/2014) for financia

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15cdf09544e1464e88c4873bef02aa46

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InOx thin films deposited by plasma assisted evaporation: Application in light shutters

Autor: Pedro Brogueira, Guilherme Lavareda, Pedro Almeida, C. Nunes de Carvalho, A. Amaral, E.G. Merino

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

An integration of undoped InO x and commercial ITO thin films into laboratory assembled light shutter devices is made. Accordingly, undoped transparent conductive InO x thin films, about 100 nm thick, are deposited by radiofrequency plasma enhanced r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6487edb2f4105108f4717e01b8f369f
https://doi.org/10.1016/j.vacuum.2014.04.011

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Conducting indium oxide films on plastic substrates by plasma enhanced reactive thermal evaporation

Autor: A. Amaral, Guilherme Lavareda, Manuela Vieira, C. Nunes de Carvalho, M. Fernandes, Yuri Vygranenko, Pedro Brogueira

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

This work reports on low temperature deposition of conducting indium oxide films by a radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE) technique. The films were deposited on polyethylene terephthalate (PET) without intentional

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8019cc9b65758986879030278b278ab
https://doi.org/10.1016/j.tsf.2019.137604

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Automated rf-PERTE system for room temperature deposition of TCO coatings

Autor: Guilherme Lavareda, Maria Manuela Almeida Carvalho Vieira, Ana Amaral, C. Nunes de Carvalho, M. Fernandes, Y. Vygranenko

Publikováno v: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

The authors are grateful to the Portuguese Foundation of Science and Technology through fellowship SFRH/BPD/102217/2014 for financial support of this research. In this work we present a fully automated plasma-enhanced reactive thermal evaporation sys

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::281b829163aefcb55438cc453d9b14ae

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Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

Autor: Guilherme Lavareda, Pedro Brogueira, O. Conde, A. Amaral, C. Nunes de Carvalho

Publikováno v: Thin Solid Films. 526:221-224

The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebc5e293376daaf09128c38a0a9250f0
https://doi.org/10.1016/j.tsf.2012.11.019

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Thermal dehydrogenation of amorphous silicon deposited on c‐Si: Effect of the substrate temperature during deposition

Autor: A. Amaral, C. Nunes de Carvalho, A. de Calheiros Velozo, Guilherme Lavareda

Publikováno v: physica status solidi c. 9:2198-2202

Samples of doped and undoped a-Si:H were deposited at temperatures ranging from 100 oC to 350 oC and then submitted to different dehydrogenation temperatures (from 350 oC to 550 oC) and times (from 1 h to 4 h). a-Si:H films were characterised after d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb0e925a62c4fa6eebc298d5778ce13e
https://doi.org/10.1002/pssc.201200194

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