Zobrazeno 1 - 5
of 5
pro vyhledávání: '"C. N. Soble"'
Autor:
R. C. Chapman, R. R. Woolcott, J. Duarte, D. J. Lichtenwalner, Orlando Auciello, C. N. Soble, A. I. Kingon, R. Adu‐Poku, S. H. Rou
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1537-1543
Films of YBa2Cu3O7−δ and YBa2Cu3O7−δ/MgO/YBa2Cu3O7−δ layered structures have been synthesized in situ using ion‐beam sputter deposition. The surface morphology of the films has been studied by means of both scanning tunneling microscopy (S
Publikováno v:
Journal of Applied Physics. 70:6952-6957
Uniform films of YBaCuO have been deposited over 4‐in.‐ (100‐mm) diam, unheated Si wafers using ion‐beam sputtering of a stoichiometric YBa2Cu3O7−δ target. Rutherford backscattering spectrometry reveals that within a 3‐in. diam, the thic
Development of an automated dual ion beam assisted process for superconducting oxide film deposition
Autor:
Orlando Auciello, Angus I. Kingon, S. H. Rou, C. N. Soble, R. R. Woolcott, M. S. Ameen, Alan R. Krauss
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :155-158
An automated dual ion beam sputter deposition system has been developed, in which individual targets of Y, Cu, and BaF2 are sequentially sputtered to produce Y-Ba-Cu-O films with controlled composition. The dwell time of the ion beam on each target i
Autor:
S. H. Rou, R. R. Woolcott, Daniel J. Lichtenwalner, C. N. Soble, T. M. Graettinger, Orlando Auciello, Angus I. Kingon
Publikováno v:
Applied Physics Letters. 61:1844-1846
YBa2Cu3O7−δ/KNbO3 thin‐film bilayers have been deposited on (100) MgO using an in situ ion‐beam sputter‐deposition technique. X‐ray diffraction and transmission electron microscopy indicate that both films grow epitaxially. The KNbO3 grows
Autor:
A. F. Chow, S. H. Rou, Angus I. Kingon, Daniel J. Lichtenwalner, Orlando Auciello, T. M. Graettinger, C. N. Soble
Publikováno v:
MRS Proceedings. 243
Three subjects are covered in this paper. First, a set of criteria are established to explain how epitaxial growth can be achieved for sol-gel processed ferroelectric thin films. These criteria describe the conversion of amorphous films to epitaxial