Zobrazeno 1 - 10
of 24
pro vyhledávání: '"C. Nörenberg"'
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Heteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) in order to elucidate the growth modes. InN/GaN grows in a 2D mode, despite the fact that there is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a190228445167393fc4b609065ff7f8c
https://doi.org/10.1201/9781351074629-117
https://doi.org/10.1201/9781351074629-117
Autor:
Martin R. Castell, M G Martin, C. Nörenberg, G. A. D. Briggs, Alison Crossley, Rachel A. Oliver
Effective preparation of clean GaN surfaces is vital for surface studies, and also has a key role to play in the development of nitride-based electronic devices, due to the importance of forming good metal-semiconductor contacts. We identify the effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02da4d02ca9445cbba6e344a9137bbd0
https://ora.ox.ac.uk/objects/uuid:b6f7f05b-f3cd-4793-b3f8-1d122410a82c
https://ora.ox.ac.uk/objects/uuid:b6f7f05b-f3cd-4793-b3f8-1d122410a82c
Autor:
J. H. G. Owen, Matteo Passoni, Carlo Spartaco Casari, C. Nörenberg, D.F. Leigh, A. Li Bassi, Kyriakos Porfyrakis, D. Cattaneo, G. A. D. Briggs
We have investigated self-assembled island formation, molecular detail and interesting contrast reversal effects for Er3N@C80 and Sc3N@C80 on Au(111) and Ag/Si(111) surfaces using variable temperature scanning tunnelling microscopy (STM) and spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78389c775ceeb7f112bf6962fbd6e66c
https://ora.ox.ac.uk/objects/uuid:08af13eb-3ebc-44a4-8309-5426565c9da8
https://ora.ox.ac.uk/objects/uuid:08af13eb-3ebc-44a4-8309-5426565c9da8
Autor:
Colin J. Humphreys, Anthony J. Kent, C. Nörenberg, C. T. Foxon, Sergei V. Novikov, Michelle A. Moram
Publikováno v:
Journal of Crystal Growth. 310:2746-2750
A series of 100-oriented ScN films was grown under N-rich conditions on 100-oriented Si using different Sc fluxes. The ScN films grew in an epitaxial cube-on-cube orientation, with [0 0 1] ScN //[0 0 1] Si and [1 0 0] ScN //[1 0 0] Si , despite the h
Autor:
A. Li Bassi, G. A. D. Briggs, Kyriakos Porfyrakis, C. Nörenberg, D.F. Leigh, J. H. G. Owen, D. Cattaneo, Arzhang Ardavan
Publikováno v:
Surface Science. 601:2750-2755
Trimetallic nitride template fullerenes have been deposited onto a variety of substrates in order to elucidate the substrate-fullerene interactions. We have investigated self-assembled island formation and molecular detail of Er3N@C80 and Sc3N@C80 on
Publikováno v:
Surface Science. 600:4126-4131
We have investigated the formation of ScSi 2-x on Si(111) using in situ scanning tunneling microscopy (STM), electron diffraction (RHEED, LEED) and ex situ atomic force microscopy (AFM). In the temperature range between 500 and 600 °C, a variety of
Publikováno v:
physica status solidi (a). 194:536-540
The growth of self-assembled InN nanostructures on GaN by MBE has been studied using two different nitrogen sources. Stranski-Krastanov growth may be achieved but is highly sensitive to the V: III ratio as well as coverage and temperature. The size a
Publikováno v:
Journal of Physics D: Applied Physics. 35:615-619
Heteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) in order to elucidate the growth modes. Using cracked ammonia as group V source, InN/GaN grows in
Autor:
Martin R. Castell, C. Nörenberg
We have used elevated-temperature scanning tunnelling microscopy (STM) to investigate the initial stages of growth of Pd and Ti on GaN(0 0 0 1). Deposition of Pd onto a Ga-rich GaN(0 0 0 1) surface followed by annealing at similar to 600 degrees C le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8738fde9c837a75016abd175ff3169ac
https://cronfa.swan.ac.uk/Record/cronfa1856
https://cronfa.swan.ac.uk/Record/cronfa1856
Autor:
Alison Crossley, C. Nörenberg, G. A. D. Briggs, Rachel A. Oliver, M G Martin, Martin R. Castell
Publikováno v:
Scopus-Elsevier
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
The preparation of clean GaN surfaces is necessary in order to study the fundamental properties of GaN surfaces, a subject of increasing scientific and industrial relevance. Here, we identify the effect of two common surface cleaning treatments (anne