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pro vyhledávání: '"C. Mazure"'
Akademický článek
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Autor:
C. Delaroche, C. Mazure, L. Bertheault, E. Denaux, L. Marchyllie, Y. Ciczora, M. Ambroise, D. Nogues, R. Falcou-Briatte
Publikováno v:
Clinica Chimica Acta. 493:S558
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65629103299df5128d39027198d4c3e3
https://doi.org/10.1016/j.cca.2019.03.1172
https://doi.org/10.1016/j.cca.2019.03.1172
Publikováno v:
Annals of Physical and Rehabilitation Medicine. 57:e284-e285
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e83a6d7b21e3c2a871d6ea175e6be3b
https://doi.org/10.1016/j.rehab.2014.03.1034
https://doi.org/10.1016/j.rehab.2014.03.1034
Autor:
Cucciati O, Marinoni C, Iovino A, Bardelli S, Adami C, Mazure A, Scodeggio M, Maccagni D, Temporin S, Zucca E, De Lucia G. and other 31 co-authors, Cucciati O., Marinoni C., Iovino A., Bardelli S., Adami C., Mazure A., Scodeggio M., Maccagni D., Temporin S., Zucca E., De Lucia G., other 31 co-authors
Publikováno v:
Astronomy & Astrophysics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=erc_________::ddb72d6e62456188ce08aad6d3bdd091
Publikováno v:
2007 IEEE International Conference on Microelectronic Test Structures.
In this paper, 300 mm high resistivity (HR) SOI UNIBONDtrade material is evaluated using RF component and millimeter wave (MMW) function realized in advanced 65 nm HR SOI CMOS technology. The goal is to investigate the insulating behavior, in term of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2057eece9b85ed8a3d1144197687f853
https://doi.org/10.1109/icmts.2007.374485
https://doi.org/10.1109/icmts.2007.374485
Autor:
T. Nakabayashi, C. Mazure
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::895dbf8a8ee6eee3251fdaaf2ecf7b18
https://doi.org/10.1109/iedm.2005.1609335
https://doi.org/10.1109/iedm.2005.1609335
Autor:
S. Deleonibus, C. Mazure, P. Gaud, H. Grampeix, J.P. Colonna, B. Previtali, H. Dansas, D. Lafond, C. Jahan, C. Fenouillet-Beranger, T. Ernst, S. Denorme, A. Vandooren, J. Cluzel, J.C. Barbe, F. Allain, L. Brevard, I. Cayrefoureq, B. Ghyselen, M. Casse, E. Rouchouze, C. Buj, L. Tosti, O. Faynot, F. Rochette, C. Dupre, F. Andrieu
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
We investigate for the first time the experimental performance of strained silicon directly on insulator (sSOI) for short and narrow FDSOI NMOS transistors integrated with a TiN/HfO2 gate stack. A +16% drive current improvement is reported for a 25nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62bed6bc9a7a88be473339fcacef0d34
https://doi.org/10.1109/vlsit.2006.1705253
https://doi.org/10.1109/vlsit.2006.1705253
Autor:
Makoto Yoshimi, C. Mazure
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
Current status and future perspectives for SOI (silicon-on-insulator) using Smart Cut technology will be reviewed. First, industrial growth of SOI production mainly driven by MRJ and low-power LSI applications will be presented, with a focus on the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5593ae6eb47f411b14b3943f5cb2b70
https://doi.org/10.1109/icsict.2004.1435000
https://doi.org/10.1109/icsict.2004.1435000
Fabrication and operation of sub-50 nm strained-Si on Si/sub 1-x/Ge/sub x/ Insulator (SGOI) CMOSFETs
Autor:
X.-D. Wang, S. Parsons, Mike Kottke, D. Tekleab, Aaron Thean, Bich-Yen Nguyen, P. Beckage, Mariam Sadaka, J. Mogab, S. Kalpat, C. Mazure, Ted R. White, Dharmesh Jawarani, Qianghua Xie, M. Zavala, T. Nguyen, M. Canonico, Ran Liu, Stefan Zollner, D. Eades, Rode R. Mora, Alexander L. Barr
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
First functional 45 nm SGOI CMOS devices on bonded SGOI substrates with T/sub SOI/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693d1a5782f342847888be6c71d8a07c
https://doi.org/10.1109/soi.2004.1391620
https://doi.org/10.1109/soi.2004.1391620
Publikováno v:
1st EUROSOI Workshop
1st EUROSOI Workshop, 2005, XX, pp.XX
1st EUROSOI Workshop, 2005, XX, pp.XX
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::abe6ad0f402ef49ff886a3994366bb90
https://hal.archives-ouvertes.fr/hal-00146191
https://hal.archives-ouvertes.fr/hal-00146191
