Zobrazeno 1 - 10
of 52
pro vyhledávání: '"C. Machala"'
Autor:
Angela Zhu, Stefan Weder, Christof Röösli, Stephen P. Cass, Kristi J. Engle Folchert, Madeline M. Goosmann, Daniel J. Lee, Robert Briggs, Michail Chatzimichalis, Lorenz Epprecht, Maria C. Machala, Chanan Shaul, David Bächinger, Marc Naville, Alexander M. Huber
OBJECTIVES To translate and validate the Zurich Chronic Middle Ear Inventory (ZCMEI-21) for the English language in order to provide an English instrument to assess health-related quality of life in chronic otitis media (COM). DESIGN Pilot translatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54875c25f651363f400ce994fc088eb0
https://www.zora.uzh.ch/id/eprint/170715/
https://www.zora.uzh.ch/id/eprint/170715/
Publikováno v:
Diagnosis and Treatment of Vestibular Disorders ISBN: 9783319978574
There are no definitive curative or preventative therapies available for Meniere’s disease. Treatment modalities are based on several theories surrounding the possible causes of the disease, and treatment aims to reduce symptoms of vertigo and pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef901aadde7d24878c79e9d0ca7b36b1
https://doi.org/10.1007/978-3-319-97858-1_14
https://doi.org/10.1007/978-3-319-97858-1_14
Autor:
S. Martin, Django Trombley, F. Hou, Renuka P. Jindal, V. M. Mahajan, C. Machala, P. R. Patalay, Hisashi Shichijo
Publikováno v:
IEEE Transactions on Electron Devices. 59:197-205
Experimental and simulation results of high-frequency channel noise in MOSFETs with 40-, 80-, and 110- nm gate lengths are presented. The measured dc I-V characteristics can be matched using the drift-diffusion (DD) and hydrodynamic (HD) transport mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54ec229ca843560e138500076fa9483
https://doi.org/10.1109/ted.2011.2173691
https://doi.org/10.1109/ted.2011.2173691
Autor:
P. S. Pandit, S. J. Anthony, T. Goldstein, K. J. Olival, M. M. Doyle, N. R. Gardner, B. Bird, W. A. Smith, D. Wolking, K. Gilardi, C. Monagin, T. Kelly, M. Uhart, J. H. Epstein, C. Machalaba, M. K. Rostal, P. Dawson, E. Hagan, A. Sullivan, H. Li, A. A. Chmura, A. Latinne, C. Lange, T. O’Rourke, S. H. Olson, L. Keatts, A. P. Mendoza, A. Perez, C. Dejuste de Paula, D. Zimmerman, M. Valitutto, M. LeBreton, D. McIver, A. Islam, V. Duong, M. Mouiche, Z. Shi, P. Mulembakani, C. Kumakamba, M. Ali, N. Kebede, U. Tamoufe, S. Bel-Nono, A. Camara, J. Pamungkas, K. Coulibaly, E. Abu-Basha, J. Kamau, S. Silithammavong, J. Desmond, T. Hughes, E. Shiilegdamba, O. Aung, D. Karmacharya, J. Nziza, D. Ndiaye, A. Gbakima, Z. Sijali, S. Wacharapluesadee, E. Alandia Robles, B. Ssebide, G. Suzán, L. F. Aguirre, M. R. Solorio, T. N. Dhole, N. T. T. Nga, P. L. Hitchens, D. O. Joly, K. Saylors, A. Fine, S. Murray, W. Karesh, P. Daszak, J. A. K. Mazet, PREDICT Consortium, C. K. Johnson
Publikováno v:
Communications Biology, Vol 5, Iss 1, Pp 1-10 (2022)
Potential host range and spillover risk for novel viruses can be predicted using a network informed by known virus-host associations.
Externí odkaz:
https://doaj.org/article/0b52d7d88f134d7ea0ec644232a04342
Publikováno v:
IEEE Transactions on Electron Devices. 53:944-964
Semiconductor industry has increasingly resorted to strain as a means of realizing the required node-to-node transistor performance improvements. Straining silicon fundamentally changes the mechanical, electrical (band structure and mobility), and ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e539d24992112d9411ad2c59c3f0f3
https://doi.org/10.1109/ted.2006.872912
https://doi.org/10.1109/ted.2006.872912
Publikováno v:
Journal of Technology Computer Aided Design TCAD. :1-6
This paper presents the results of an experiment that examines the effects of standard channel formation process steps on boron channel profiles. The experiment is specifically designed to determine the role of various processing steps on reverse sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d72714cb3e1816ab9dd2c146854b1475
https://doi.org/10.1109/tcad.1996.6449171
https://doi.org/10.1109/tcad.1996.6449171
Publikováno v:
ICCAD
This paper presents an efficient dc MOSFET model for accurate simulation of analog circuits. A new approach to model channel length modulation is presented. An empirical expression for channel length modulation is derived from measurements. This is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3480666e400606b582f127e9749c27d
https://doi.org/10.1109/43.466336
https://doi.org/10.1109/43.466336
Autor:
Chang-Hoon Choi, Robert W. Dutton, Rajesh Khamankar, Zhiping Yu, C. Machala, P.R. Chidambaram
Publikováno v:
IEEE Electron Device Letters. 23:224-226
Degradation of MOS gate capacitance in the inversion region becomes worse as the gate length is scaled down, according to a new experiment. Namely, the polysilicon depletion effect has gate length dependence. The origin of this gate length-dependent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28ec327ba8f937b77f8c66ce5c4983fe
https://doi.org/10.1109/55.992846
https://doi.org/10.1109/55.992846
Autor:
Shaofeng Yu, Brian K. Kirkpatrick, O'brien Corey Rollin, Larry Liu, Rajesh Khamankar, Oluwamuyiwa Oluwagbemiga Olubuyide, Deborah J. Riley, Anand T. Krishnan, I. Fujii, C. Machala, Clinton L. Montgomery, Brian Hornung, H. Bu, Yiming Gu, Steven L. Prins, T. Lowry, K. Kirmse, James Walter Blatchford, Tad Grider, C. Bowen, G. Shinn, D. Corum, C. Lin, Tony Tae-Hyoung Kim
Publikováno v:
2008 Symposium on VLSI Technology.
A 45 nm high performance technology with 11 level metallization is presented for SOC applications. High performance and density are maintained through new process optimizations that allow the use of less restrictive layouts by eliminating defect gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24ec331746ae0843044248c5da8aaa5
https://doi.org/10.1109/vlsit.2008.4588608
https://doi.org/10.1109/vlsit.2008.4588608
Autor:
Y. G. Wang, K. Liu, H. Bu, D. B. Scott, C. Machala, S. Zhao, T. Rost, Y. Chen, J. Wu, Hal Edwards, L. Adam, S. Tang
Publikováno v:
AIP Conference Proceedings.
90 and 65nm node MOSFETs were imaged by scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The samples were prepared by a beveling method. In wafers processed with a capped‐poly (disposable stressor) process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2515d4770ca9e594801e2b13d6f896a3
https://doi.org/10.1063/1.2062975
https://doi.org/10.1063/1.2062975