Zobrazeno 1 - 10 of 43 pro vyhledávání: '"C. M. Wolfe"'
1
NaK bound–free and bound–bound 4 3Σ+→a 3Σ+ emission
Autor: C. M. Wolfe, A. P. Hickman, B.M. McGeehan, S. Ashman, R. Steinhardt, M.L. Monaco, John Huennekens
Publikováno v: Journal of Molecular Spectroscopy. 265:74-80
The relative transition dipole moment function M(R) for the 4 3 R + ? a 3 R + electronic transition in the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eddb71f66acca67840c91be8734f83f5
https://doi.org/10.1016/j.jms.2010.11.004
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2
Global analysis of data on the spin-orbit-coupledA1Σu+andb3Πustates of Cs2
Autor: Andrey V. Stolyarov, Ergin Ahmed, S. Ashman, Houssam Salami, A. N. Drozdova, Y. Guan, Jianmei Bai, C. M. Wolfe, T. H. Bergeman, C. Amiot, Feng Xie, John Huennekens, A. M. Lyyra, Ruvin Ferber, M. Tamanis, Svetlana Kotochigova, B. Beser, E. A. Pazyuk, Hanns-Christoph Nägerl, Li Li, Dan Li, N. Bouloufa, Olivier Dulieu, Johann G. Danzl
Publikováno v: Physical Review A. 83
We present experimentally derived potential curves and spin-orbit interaction functions for the strongly perturbed A {sup 1{Sigma}}{sub u}{sup +} and b {sup 3{Pi}}{sub u} states of the cesium dimer. The results are based on data from several sources.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d9802fb6ac1a0d24b6cc158956b26a2
https://doi.org/10.1103/physreva.83.032514
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3
Experimental studies of the NaCs 53Π0and 1(a)3Σ+states
Autor: A. P. Hickman, C. M. Wolfe, Kara Richter, Joshua A. Jones, C. Faust, John Huennekens, B.M. McGeehan, S. Ashman
Publikováno v: The Journal of Chemical Physics. 136:114313
We report high resolution measurements of 372 NaCs 5(3)Π(0)(v, J) ro-vibrational level energies in the range 0 ≤ v ≤ 22. The data have been used to construct NaCs 5(3)Π(0) potential energy curves using the Rydberg-Klein-Rees and inverted pertur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18a556fee627eff1a3527e12cb096a59
https://doi.org/10.1063/1.3689388
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4
Collisional transfer of population and orientation in NaK
Autor: John Huennekens, A. M. Lyyra, C. M. Wolfe, Ergin Ahmed, S. Ashman, B. Beser, J. Bai
Publikováno v: The Journal of Chemical Physics. 134:174301
Collisional satellite lines with |ΔJ| ≤ 58 have been identified in recent polarization spectroscopy V-type optical-optical double resonance (OODR) excitation spectra of the Rb(2) molecule [H. Salami et al., Phys. Rev. A 80, 022515 (2009)]. Observa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d8466c78bc15f9e4e0f07034cd62405
https://doi.org/10.1063/1.3575234
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5
Liquid Phase Epitaxial Growth of ZnSnP2 on GaAs
Autor: G. A. Davis, C. M. Wolfe
Publikováno v: Journal of The Electrochemical Society. 130:1408-1412
Croissance de ZnSnP 2 sur differentes orientations de GaAspa epitaxie en phase liquide. Les meilleurs resultats sont obtenus sur les faces {100}. Determination des conditions de croissance permettant d'obtenir la phase chalcopyrite
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31cab45995b9f5fe6f585f0d77ecaaf9
https://doi.org/10.1149/1.2119963
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6
Impurity gradients caused by surface states and substrate doping in epitaxial GaAs
Autor: C. M. Wolfe, K. H. Nichols
Publikováno v: Applied Physics Letters. 31:356-359
A model is developed for the incorporation of donors and acceptors in epitaxial GaAs which indicates that the thin p‐type region often observed at the layer‐substrate interface in n−p+ structures is caused by the electric field associated with
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1fee92e2725a07bf3ceef879ba19f4d2
https://doi.org/10.1063/1.89698
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7
Self‐compensation of donors in high‐purity GaAs
Autor: C. M. Wolfe, G. E. Stillman
Publikováno v: Applied Physics Letters. 27:564-567
Column‐IV (Si, Ge, and Sn) and column‐VI (S, Se, and Te) impurities are used to dope high‐purity layers of vapor epitaxial GaAs. Resistivity and Hall data on a large number of samples show that the common donors in GaAs (assumed to be column‐
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::91538e23d61360d195387dab726fae14
https://doi.org/10.1063/1.88288
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9
Free-exciton energy spectrum in GaAs
Autor: T. C. Collins, D. C. Reynolds, R. J. Almassy, C. M. Wolfe, S. B. Nam, Cole W. Litton
Publikováno v: Physical Review B. 13:761-767
The exciton energy spectrum in GaAs has been studied by photoluminescence and reflection. The photoluminescence was excited using a krypton laser (6471 \AA{}). We observed for the first time the spectra for the excited states of the free exciton in G
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ea5a2ea1dfcfd296079d770edbc23ccb
https://doi.org/10.1103/physrevb.13.761
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