Zobrazeno 1 - 10
of 34
pro vyhledávání: '"C. M. Thrush"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:437-440
A quarter-wavelength absorber structure was developed for pyroelectric detector applications in the 2.5–3.5μm range. The absorber consisting of Pt and plasma-enhanced chemical vapor deposited SiO2 layers was fabricated using standard clean-room pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6758d0aebf4eaac701ec8a9e11945793
https://doi.org/10.1116/1.2712194
https://doi.org/10.1116/1.2712194
Autor:
Joseph P. Heremans, C. M. Thrush
Publikováno v:
Physical Review B. 59:12579-12583
We report here measurements of the thermoelectric power and longitudinal magneto-Seebeck coefficient of 200 nm diameter single-crystal bismuth nanowires. Nanowires of pure Bi and of n-type-doped Bi (with Te at about $5\ifmmode\times\else\texttimes\fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d16ca04ccaa2ae347ef2958f6859ae9
https://doi.org/10.1103/physrevb.59.12579
https://doi.org/10.1103/physrevb.59.12579
Publikováno v:
Journal of Crystal Growth. 195:378-384
Indium antimonide magnetoresistors are used as magnetic position sensors in very demanding automotive environments such as crankshaft and camshaft sensors for engine control. The use of tellurium as an n-type dopant was studied using Hall effect meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ab15bea5d94e0a2ac7c06059ab90ab
https://doi.org/10.1016/s0022-0248(98)00623-x
https://doi.org/10.1016/s0022-0248(98)00623-x
Publikováno v:
Superlattices and Microstructures. 24:263-267
The magnetoresistance of antidot lattices and the magnetic field dependence of the three-terminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In0.53Ga0.47As/InP heterojunction system, as a func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79cba42801b3fc8cb1989f1f8f3ec29d
https://doi.org/10.1006/spmi.1996.0262
https://doi.org/10.1006/spmi.1996.0262
Publikováno v:
Journal of Applied Physics. 83:2041-2045
We report the low temperature negative magnetoresistance and magnetization of molecular beam epitaxy grown (InSb)1−xYx for a range of yttrium concentrations (0.03%⩽x⩽4.0%). Our experimental results from x-ray diffraction, Hall effect, and magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bad6380f79f1242faf839371bc220cd
https://doi.org/10.1063/1.366936
https://doi.org/10.1063/1.366936
Publikováno v:
Journal of Electronic Materials. 26:1237-1243
Magnetoresistors made from n-type indium antimonide are of interest for magnetic position sensing applications. In this study, tin-doped indium antimonide was grown by the metalorganic chemical vapor deposition technique using trimethylindium, trisdi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27270f7f9e39c813f1e8493590c7ea74
https://doi.org/10.1007/s11664-997-0026-7
https://doi.org/10.1007/s11664-997-0026-7
Publikováno v:
Journal of Crystal Growth. :860-867
Indium antimonide is of interest for infrared detecting and emitting devices and for magnetic field sensors. In this study, indium antimonide doped with manganese and grown by molecular beam epitaxy was investigated. Secondary ion mass spectroscopy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b77fa2d6833a65fe87e2955a4e16b47
https://doi.org/10.1016/s0022-0248(96)00916-5
https://doi.org/10.1016/s0022-0248(96)00916-5
Autor:
S A Studenikin, I A Panaev, C. M. Thrush, V. A. Tkachenko, Dale L. Partin, Donald T. Morelli, O A Tkachenko, Joseph P. Heremans
Publikováno v:
Semiconductor Science and Technology. 11:1857-1862
Transport properties of Si--doped InSb grown by molecular beam epitaxy are studied. The mobility spectrum (MS) analysis made over a wide temperature range reveals three species of carriers: those associated with the bulk of the film, and electrons in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef5d962118214cef97b390d0bdeb7277
https://doi.org/10.1088/0268-1242/11/12/016
https://doi.org/10.1088/0268-1242/11/12/016
Publikováno v:
Physical Review B. 52:5767-5772
Transverse electron focusing is studied in a two-dimensional electron gas in the lattice-matched ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/InP system, as a function of temperature (3 KT180 K) and areal electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99aa7eaf385583c94d92a4667e6c12ad
https://doi.org/10.1103/physrevb.52.5767
https://doi.org/10.1103/physrevb.52.5767
Autor:
Dale L. Partin, Grzegorz Karczewski, Joseph P. Heremans, C. M. Thrush, Richardson Ms, Jacek K. Furdyna
Publikováno v:
Physical Review B. 48:11329-11335
The far-infrared magnetotransmission of thin films of semiconducting and semimetallic Bi 1-x Sb x alloys grown by molecular-beam epitaxy has been measured at fixed photon energies between 2.5 and 21.4 meV in magnetic fields up to 6 T, at T=1.8 K. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9541b668c6d9e4b7bd5fe7e1b69de6d
https://doi.org/10.1103/physrevb.48.11329
https://doi.org/10.1103/physrevb.48.11329