Zobrazeno 1 - 2
of 2
pro vyhledávání: '"C. M. Pelto"'
Autor:
D. Towner, C. Ryder, M. A. Blount, C. Auth, K. Sethi, J. R. Weber, Che-Yun Lin, U. E. Avci, A. J. Welsh, C. M. Pelto, A. Kundu, R. Grover, Rahim Kasim, D. Seghete, A. Schmitz, J. Hicks
Publikováno v:
IRPS
We present a high density MIM decoupling capacitor that enables improved microprocessor performance by providing robust on-chip power supply droop reduction. The MIM dielectric is fabricated using ALD-deposited HfO 2 -Al 2 O 3 and HfO 2 -ZrO 2 high-k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb161d96fcf1b5e26d60236c1615071
https://doi.org/10.1109/irps45951.2020.9128312
https://doi.org/10.1109/irps45951.2020.9128312
Autor:
Benjamin J. Orr, Nathan Jack, C. Auth, A. Schmitz, Tony Acosta, Steven S. Poon, Che-Yun Lin, Abdur Rahman, C. AnDyke, Rahim Kasim, K. Downes, G. McPherson, Sunny Chugh, Madhavan Atul, D. Nminibapiel, Adam Neale, K. Sethi, Seung Hwan Lee, S. Ramey, Tanmoy Pramanik, Michael L. Hattendorf, Emre Armagan, J. Palmer, Subhash M. Joshi, Ian R. Post, C. M. Pelto, P. Nayak, Yeoh Andrew W, G. Martin, Gerald S. Leatherman, H. Wu, N. Seifert, A. Lowrie, R. Grover, H. Mao
Publikováno v:
IRPS
We provide a comprehensive overview of the reliability characteristics of Intel’s 10+ logic technology. This is a 10 nm technology featuring the third generation of Intel’s FinFETs, seventh generation of strained silicon, fifth generation of high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e7a8286d09b3f3bfcb1c27f6a51e61
https://doi.org/10.1109/irps45951.2020.9128345
https://doi.org/10.1109/irps45951.2020.9128345