Zobrazeno 1 - 8
of 8
pro vyhledávání: '"C. M. Manoj Kumar"'
Autor:
Wael Z. Tawfik, Sang Kyun Shim, Shangfeng Liu, Naesung Lee, Xinqiang Wang, C. M. Manoj Kumar, June Key Lee
Publikováno v:
Journal of Materials Chemistry C. 8:17336-17341
The short wavelength of far ultraviolet C (UVC) light sources is effective for various applications that include sterilizing bacteria and viruses, water purification, and sensing. Here, a triode structure UVC light source tube operating at ∼270 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4653efc3d95cd37084a3fa35cc850a2
https://doi.org/10.1039/d0tc04597g
https://doi.org/10.1039/d0tc04597g
Autor:
June Key Lee, Sang-Wan Ryu, Wael Z. Tawfik, Hansung Lee, Joonmo Park, Sang Kyun Shim, Naesung Lee, C. M. Manoj Kumar, Jaehwi Lee, Jong Hun Han
Publikováno v:
Journal of Materials Chemistry C. 7:11540-11548
High efficiency and mass-scale production ultraviolet (UV) light sources have become a basic requirement for various applications, and as such have attracted considerable technological interest. Here, a flat 2 inch UV-light-source tube-based triode s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e6e94f0e96bfc2b35d9d2e2a8d8286
https://doi.org/10.1039/c9tc03365c
https://doi.org/10.1039/c9tc03365c
Autor:
Jianjun Gao, Chongyang Liu, Xin Guo, Hong Wang, C. M. Manoj Kumar, Kian Siong Ang, Yang Tian, Bo Gao, Qian Qian Meng
Publikováno v:
IEEE Photonics Technology Letters. 26:1952-1955
InP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daae9a42c70387f36483a5f5e2a615de
https://doi.org/10.1109/lpt.2014.2343260
https://doi.org/10.1109/lpt.2014.2343260
Autor:
Binit Syamal, C. M. Manoj Kumar, K. Ranjan, Geok Ing Ng, S. C. Foo, M. J. Anand, S. Vicknesh, Xing Zhou, Subramaniam Arulkumaran
The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b78cd2df57d0fc76e15801fa3d95bd5a
http://hdl.handle.net/10220/25288
http://hdl.handle.net/10220/25288
Autor:
Subramaniam Arulkumaran, K. Ranjan, S. Vicknesh, S. B. Dolmanan, Sukant K. Tripathy, C. M. Manoj Kumar, Geok Ing Ng
We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In 0.17 Al 0.83 N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec74762c9293ccffed908d76f942b2cf
http://hdl.handle.net/10220/25657
http://hdl.handle.net/10220/25657
Autor:
Hong Wang, Subramaniam Arulkumaran, C. M. Manoj Kumar, K. Ranjan, Wei Meng Lim, Geok Ing Ng, S. Vicknesh, Kian Siong Ang, Guo-Qiang Lo, Sukant K. Tripathy, Chirn Chye Boon
Publikováno v:
2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e927985aae364ddfa21b0fae095fc50
https://doi.org/10.1109/rfit.2012.6401646
https://doi.org/10.1109/rfit.2012.6401646
Autor:
C. M. Manoj Kumar, Geok Ing Ng, L. Ravikiran, Nethaji Dharmarasu, M. Agrawal, S. Munawar Basha, K. Radhakrishnan, Subramaniam Arulkumaran
Publikováno v:
Journal of Applied Physics. 117:245305
The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::166b98ceba3a41f4b4a4476b48610729
https://doi.org/10.1063/1.4923035
https://doi.org/10.1063/1.4923035
Autor:
S. Bin Dolmanan, Siddharth Rajan, C. M. Manoj Kumar, K. L. Teo, Subramaniam Arulkumaran, Sukant K. Tripathy, Geok Ing Ng, Omor F. Shoron, K. Ranjan
Publikováno v:
Applied Physics Letters. 106:053502
A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In0.17 Al 0.83N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e90a4ee029a47f28cf668ca4e86f86e6
https://doi.org/10.1063/1.4906970
https://doi.org/10.1063/1.4906970