Zobrazeno 1 - 10 of 26 pro vyhledávání: '"C. M. Manoj"'
1
Akademický článek
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3
Nanopatterned sapphire substrate to enhance the efficiency of AlGaN-based UVC light source tube with CNT electron-beam
Autor: Wael Z. Tawfik, Sang Kyun Shim, Shangfeng Liu, Naesung Lee, Xinqiang Wang, C. M. Manoj Kumar, June Key Lee
Publikováno v: Journal of Materials Chemistry C. 8:17336-17341
The short wavelength of far ultraviolet C (UVC) light sources is effective for various applications that include sterilizing bacteria and viruses, water purification, and sensing. Here, a triode structure UVC light source tube operating at ∼270 nm
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4653efc3d95cd37084a3fa35cc850a2
https://doi.org/10.1039/d0tc04597g
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4
Cathodoluminescence of a 2 inch ultraviolet-light-source tube based on the integration of AlGaN materials and carbon nanotube field emitters
Autor: June Key Lee, Sang-Wan Ryu, Wael Z. Tawfik, Hansung Lee, Joonmo Park, Sang Kyun Shim, Naesung Lee, C. M. Manoj Kumar, Jaehwi Lee, Jong Hun Han
Publikováno v: Journal of Materials Chemistry C. 7:11540-11548
High efficiency and mass-scale production ultraviolet (UV) light sources have become a basic requirement for various applications, and as such have attracted considerable technological interest. Here, a flat 2 inch UV-light-source tube-based triode s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0e6e94f0e96bfc2b35d9d2e2a8d8286
https://doi.org/10.1039/c9tc03365c
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5
Akademický článek
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6
Akademický článek
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111).
Autor: Ravikiran, L., Radhakrishnan, K., Basha, S. Munawar, Dharmarasu, N., Agrawal, M., kumar, C. M. Manoj, Arulkumaran, S., Ng, G. I.
Publikováno v: Journal of Applied Physics; 6/28/2015, Vol. 117 Issue 24, p245305-1-245305-7, 7p, 2 Diagrams, 3 Charts, 8 Graphs
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7
Akademický článek
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8
High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure
Autor: Jianjun Gao, Chongyang Liu, Xin Guo, Hong Wang, C. M. Manoj Kumar, Kian Siong Ang, Yang Tian, Bo Gao, Qian Qian Meng
Publikováno v: IEEE Photonics Technology Letters. 26:1952-1955
InP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs se
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daae9a42c70387f36483a5f5e2a615de
https://doi.org/10.1109/lpt.2014.2343260
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9
Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
Autor: Binit Syamal, C. M. Manoj Kumar, K. Ranjan, Geok Ing Ng, S. C. Foo, M. J. Anand, S. Vicknesh, Xing Zhou, Subramaniam Arulkumaran
The influence of electric field (EF) on the dynamic ON-resistance (dyn-R DS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b78cd2df57d0fc76e15801fa3d95bd5a
http://hdl.handle.net/10220/25288
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10
High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate
Autor: Subramaniam Arulkumaran, K. Ranjan, S. Vicknesh, S. B. Dolmanan, Sukant K. Tripathy, C. M. Manoj Kumar, Geok Ing Ng
We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In 0.17 Al 0.83 N/GaN high-electron mobility transistors (HEMTs) fabricated on Si(111). The HEMTs exhibited a maximum drain current density of 1320 mA/mm, a ma
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec74762c9293ccffed908d76f942b2cf
http://hdl.handle.net/10220/25657
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