Zobrazeno 1 - 9
of 9
pro vyhledávání: '"C. M. Folkman"'
Autor:
K.-H. Cho, U. Patel, J. Podkaminer, Y. Gao, C. M. Folkman, C. W. Bark, S. Lee, Y. Zhang, X. Q. Pan, R. McDermott, C. B. Eom
Publikováno v:
APL Materials, Vol 1, Iss 4, Pp 042115-042115 (2013)
We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001) Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid depos
Externí odkaz:
https://doaj.org/article/33b36d15e4914f05abaf2ef2b3927e41
Autor:
Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Doo Seok Jeong, Anquan Jiang, Cheol Seong Hwang, Sebastian Schmelzer, Ulrich Böttger, Rainer Waser, X. Liu, H. Lu, J. D. Burton, Y. Wang, C. W. Bark, Y. Zhang, D. J. Kim, A. Stamm, P. Lukashev, D. A. Felker, C. M. Folkman, P. Gao, M. S. Rzchowski, X. Q. Pan, C. B. Eom, A. Gruverman, E. Y. Tsymbal, E. D. Politova, G. M. Kaleva, A. V. Mosunov, N. V. Sadovskaya, A. G. Segalla, Dipankar Mandal, Karsten Henkel, Suken Das, Dieter Schmeißer, K. S. Abdel Halim, M. H. Khedr, A. A. Farghali, M. I. Nasr, N. K. Soliman, Mehmet Onbasli, T. Goto, D. H. Kim, L. Bi, G. F. Dionne, C. A. Ross, Theodor Schneller, Simon Goodwin, Francesco Di Quarto, Francesco Di Franco, Monica Santamaria, Hongtao Yuan, Y. Ishida, K. Koizumi, H. Shimotani, K. Kanai, K. Akaike, Y. Kubozono, A. Tsukazaki, M. Kawasaki, S. Shin, Y. Iwasa, Roger A. De Souza, Veronika Metlenko, Henning Schraknepper, Amr Ramadan, B. O. H. Grope, S. Grieshammer, J. Koettgen, M. Martin, Taizo Shibuya, Kenji Yasuoka, Susanne Mirbt, Biplab Sanyal, Yoshitaka Aoki, Manfred Martin, R. Merkle, M. Shirpour, B. Rahmati, W. Sigle, P. A. van Aken, J. Maier, N. A. Sobolev, A. M. Azevedo, V. V. Bazarov, E. R. Zhiteytsev, R. I. Khaibullin, David Griesche, Yusuke Otsuka, Christian Pithan, Jürgen Dornseiffer, H. Lustfeld, C. Pithan, M. Reißel
Publikováno v:
Frontiers in Electronic Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7188efaa838f8f4c2f9fd629bac32f15
https://doi.org/10.1002/9783527667703.ch69
https://doi.org/10.1002/9783527667703.ch69
Autor:
Tae Heon Kim, Daesu Lee, Jong-Gul Yoon, C. B. Eom, C. M. Folkman, Seung Hyub Baek, Tae Won Noh
Publikováno v:
Physical Review B. 84
We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (pos
Autor:
S. Lee, J. Jiang, Y. Zhang, C. W. Bark, J. D. Weiss, C. Tarantini, C. T. Nelson, H. W. Jang, C. M. Folkman, S. H. Baek, A. Polyanskii, D. Abraimov, A. Yamamoto, J. W. Park, X. Q. Pan, E. E. Hellstrom, D. C. Larbalestier, C. B. Eom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e379701da23edbf12d2245f77b9ef92
https://doi.org/10.1142/9789814317665_0047
https://doi.org/10.1142/9789814317665_0047
Autor:
S. Lee, J. Jiang, Y. Zhang, C. W. Bark, J. D. Weiss, C. Tarantini, C. T. Nelson, H. W. Jang, C. M. Folkman, S. H. Baek, A. Polyanskii, D. Abraimov, A. Yamamoto, J. W. Park, X. Q. Pan, E. E. Hellstrom, D. C. Larbalestier, C. B. Eom
Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties and evaluate device applications. So far, superconducting properties of ferropnictide thin films seem compromised by imperfec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f94a0891d812fa1229bfb914e2495057
http://arxiv.org/abs/0910.0268
http://arxiv.org/abs/0910.0268
Autor:
Yong Wang, Mark Rzchowski, C. M. Folkman, Ho Won Jang, Chang-Beom Eom, M. Ye. Zhuravlev, Alexei Gruverman, Haidong Lu, D. A. Felker, Evgeny Y. Tsymbal, Dong Wu
Publikováno v:
Nano letters. 9(10)
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a fe
Autor:
S. Seifert, Seong Keun Kim, Hua Zhou, Timothy T. Fister, Matthew J. Highland, Jeffrey A. Eastman, Dillon D. Fong, Peter M. Baldo, P. H. Fuoss, C. M. Folkman, Edith Perret
Publikováno v:
Review of Scientific Instruments. 84:025111
In the growing field of in operando and in situ X-ray experiments, there exists a large disparity in the types of environments and equipment to control them. This situation makes it challenging to conduct multiple experiments with a single mechanical
Autor:
C. M. Folkman, Ho Won Jang, Chang-Beom Eom, Venkatraman Gopalan, Long Qing Chen, C. T. Nelson, Seung Hyub Baek, Amit Kumar, Xiaoqing Pan, Y. L. Li, Stephen K. Streiffer
Publikováno v:
Applied Physics Letters. 94:251911
We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous
Autor:
H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, C. B. Eom, Y. H. Chu, P. Shafer, R. Ramesh, V. Vaithyanathan, D. G. Schlom
Publikováno v:
Applied Physics Letters. 92:062910
The present invention provides free-standing heterostructures including a layer of BiFeO 3 and a layer comprising a perovskite over which the BiFeO 3 is epitaxially grown. The layer comprising the perovskite has been released from a substrate upon wh