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Akademický článek

Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films

Autor: F. Schipani, C. M. Aldao, M. A. Ponce

Publikováno v: AIP Advances, Vol 2, Iss 3, Pp 032138-032138-6 (2012)

The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barr

Externí odkaz: https://doaj.org/article/db430821dbc54aa497b17c789135d57f

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Evaluating Mechanisms of Adsorbate Induced Roughening in Si(100) with Monte Carlo Simulations

Autor: C. M. Aldao, D. A. Mirabella

Publikováno v: Topics in Catalysis. 54:108-113

Halogen adsorption induces roughening of Si(100) producing pits and regrowth structures that depend on the type of adsorbed halogen and coverage. It is thought that this spontaneous roughening arises from steric repul- sions between adsorbates. Recen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0128aa4fa48618eb563fd65570efbce1
https://doi.org/10.1007/s11244-011-9630-0

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Dimer chain patterns during submonolayer growth of silicon on Si(100)

Autor: S. J. Chey, Hector Omar Martin, J. L. Iguain, C. M. Aldao, J. H. Weaver, Y. Gong

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:3460-3463

Dimer chains formed during deposition of Si on Si(100)-2×1 at ∼435 K have been analyzed using scanning tunneling microscopy. Results are compared with the outcome of Monte Carlo simulations. The size distributions obtained from experiments and the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::33f0019a05623fc72571713a8311f396
https://doi.org/10.1116/1.581503

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Comparative effects of adatom evaporation and ad-dimer diffusion for Si on Si(100)-2×1

Autor: C. M. Aldao, Hector Omar Martin, J. L. Iguain

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2334-2338

The aim of this article is to compare the effects of adatom evaporation and ad-dimer diffusion on the growth of silicon structures on the Si(100)-2×1 surface in the range of 350–500 K. We study the results predicted by two models. Model A includes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0754a7f9442379dcec813d476f1cb91f
https://doi.org/10.1116/1.580744

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Orbital nonorthogonality effects in band structure calculations within the tight‐binding scheme

Autor: R R Deza, C M Aldao, D A Mirabella

Publikováno v: American Journal of Physics. 62:162-166

The consequences of orbital nonorthogonality on the structure of energy bands in the one‐electron approximation are studied for an infinite one‐dimensional monoatomic chain with nearest‐neighbor interactions in the tight‐binding scheme. Neare

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c44c718a43ce941ee0ee4aaeb4fb6066
https://doi.org/10.1119/1.17637

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Adsorbate-induced roughening of Si(100) by interactions at steps

Autor: D. A. Mirabella, J. H. Weaver, R. E. Butera, C. M. Aldao

Publikováno v: CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET

Through a detailed study of Cl adsorption on Si(100) using scanning-tunneling microscopy, we identified sites at steps where adsorption leads to roughening and the formation of extended pits and regrowth structures. Using the equilibrium occupation p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1430f2f877424ea9f3a6d4ae6f506ab
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.82.045309

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Equilibrium morphologies for Cl-roughened Si(100) at 700–750 K: Dependence on Cl concentration

Autor: J. H. Weaver, C. M. Aldao, Koji S. Nakayama, B. R. Trenhaile, G. J. Xu

Publikováno v: CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET

Adsorbed halogen atoms on Si(100)-(2×1) can induce roughening at temperatures where material removal (etching) is minimal. Variable temperature scanning tunneling microscopy was used to follow roughening at 700–750 K for surfaces with 0.1–0.99 M

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b05cf2a381926c2ea78cfc73ba06bbfc
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.67.125321

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Equilibrium island size distribution in one dimension revisited: analytical models and Monte Carlo simulations

Autor: C M Aldao, D A Mirabella

Publikováno v: Journal of Statistical Mechanics: Theory and Experiment. 2011:P03011

The island size distribution, at thermodynamic equilibrium, of interacting particles in a one-dimensional lattice-gas model is revisited. A derivation for the exact island size distribution of nearest neighbor interacting particles using the detailed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adc5f4bc942e84b6cf62daa927327f4c
https://doi.org/10.1088/1742-5468/2011/03/p03011

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Degradation in ZnO varistors

Autor: M A Benavente, C M Aldao, M S Castro

Publikováno v: Journal of Physics: Condensed Matter. 5:A341-A342

Among the mechanisms suggested to account for degradation of varistor materials, ion migration has strong support. Mobile, positively charged ions in the depletion layer would be the key element in degradation. In this context, the authors discuss th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51e6c1f073fcd9bfb1512395ef31e9e1
https://doi.org/10.1088/0953-8984/5/33a/125

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