Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Autor: Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck

Publikováno v: Journal of Applied Physics. 133:143101

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active reg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::545042db491f7de057f9fb86b614f448
https://doi.org/10.1063/5.0142035

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Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective.

Autor: Li, Panpan, Ewing, Jacob, Wong, Matthew S., Yao, Yifan, Li, Hongjian, Gandrothula, Srinivas, Smith, Jordan M., Iza, Mike, Nakamura, Shuji, DenBaars, Steven P.

Publikováno v: APL Materials; Aug2024, Vol. 12 Issue 8, p1-12, 12p

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Bottom-Up Formation of III-Nitride Nanowires: Past, Present, and Future for Photonic Devices.

Autor: Min J; Department of Optical Engineering, Kumoh National Institute of Technology, Gumi, 39253, Republic of Korea., Wang Y; Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia., Park TY; Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia., Wang D; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China., Janjua B; Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia., Jeong D; Department of Optical Engineering, Kumoh National Institute of Technology, Gumi, 39253, Republic of Korea., Kim GS; Department of Optical Engineering, Kumoh National Institute of Technology, Gumi, 39253, Republic of Korea., Sun H; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China., Zhao C; Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101804, China., Mendes JC; Instituto de Telecomunicações, University of Aveiro, Aveiro, 3810-193, Portugal., Correia MRP; Departamento de Física & i3N, Universidade de Aveiro, Campus Universitário de Santiago, Aveiro, 3810-193, Portugal., Carvalho DF; International Iberian Nanotechnology Laboratory, Braga, 4715-330, Portugal., Cardoso JPS; Departamento de Física & i3N, Universidade de Aveiro, Campus Universitário de Santiago, Aveiro, 3810-193, Portugal., Wang Q; Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia., Zhang H; Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia., Ng TK; Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia., Ooi BS; Photonics Laboratory, Electrical and Computer Engineering Program, Division of Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Dec; Vol. 36 (51), pp. e2405558. Date of Electronic Publication: 2024 Oct 21.