Zobrazeno 1 - 10
of 38
pro vyhledávání: '"C. Lobre"'
Akademický článek
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Akademický článek
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Autor:
Jean-Louis Santailler, Nicolas Péré-Laperne, Ph. Ballet, A. Kerlain, D. Brellier, C. Cervera, O. Gravrand, B. Delacourt, C. Lobre, F. Boulard, J. Rothman, V. Destefanis
Publikováno v:
Journal of Electronic Materials. 47:5680-5690
The Shockley–Read–Hall (SRH) mechanism might be a limiting factor of an infrared (IR) photodiode's dark current. This limitation is twofold. SRH generation might occur in the depletion region of the photodiode. In that case, the corresponding cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2702d5084e3b7b2335b94f795bb501
https://doi.org/10.1007/s11664-018-6557-2
https://doi.org/10.1007/s11664-018-6557-2
Autor:
F. Rochette, L. Mangin, G. Ghibaudo, J. L. Santailler, A. Chorier, P. Ballet, C. Lobre, B. Polge, P. Duvaut
Publikováno v:
Journal of Electronic Materials
Journal of Electronic Materials, 2019, ⟨10.1007/s11664-019-07253-z⟩
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, ⟨10.1007/s11664-019-07253-z⟩
Journal of Electronic Materials, 2019, ⟨10.1007/s11664-019-07253-z⟩
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2019, ⟨10.1007/s11664-019-07253-z⟩
Passivation of HgCdTe is known to be a key point in the making of high performance cooled infrared imagers. In this work, the electrical properties of the passivation layer of n-type mid-wave HgCdTe layers are investigated, using metal–insulator-se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8665ca189022fce81ce1297cdcf8ad72
https://hal.science/hal-02136323
https://hal.science/hal-02136323
Akademický článek
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Autor:
N. Baier, Bruno Fièque, O. Boulade, O. Gravrand, C. Lobre, V. Moreau, C. Cervera, J. P. Zanatta, J. Rothman
Publikováno v:
Journal of Electronic Materials. 45:4532-4541
HgCdTe (MCT) is a very versatile material system for infrared (IR) detection, suitable for high performance detection in a wide range of applications and spectral ranges. Indeed, the ability to tailor the cutoff frequency as close as possible to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9210b1f37b4b78f6f71c7ed9f5dd828e
https://doi.org/10.1007/s11664-016-4516-3
https://doi.org/10.1007/s11664-016-4516-3
Autor:
L. Mollard, J. P. Zanatta, C. Lobre, N. Baier, O. Boulade, V. Moreau, G. Bourgeois, C. Cervera, O. Gravrand, Gérard Destefanis
Publikováno v:
Journal of Electronic Materials. 44:3144-3150
We report recent developments at Commissariat a l’Energie Atomique-Laboratoire d’Electronique des Technologies de l’Information Infrared Laboratory on the processing and characterization of p-on-n HgCdTe (MCT) planar infrared focal plane arrays
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e00fc0265d253da2f0210deef98af0
https://doi.org/10.1007/s11664-015-3851-0
https://doi.org/10.1007/s11664-015-3851-0
Autor:
C. Lobre, N. Baier, Olivier Boulade, C. Cervera, V. Moreau, Bruno Fièque, Olivier Gravrand, J. P. Zanatta, J. Rothman
Publikováno v:
International Conference on Space Optics — ICSO 2016.
HgCdTe is very unique material system for infrared (IR) detection. In combination with its lattice matched native substrate CdZnTe, this semiconductor alloy allows to address the whole infrared (IR) band, from the near IR (NIR, 2?m cutoff) to the mid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4631b385bde10bf090c2ace970ddf491
https://doi.org/10.1117/12.2296207
https://doi.org/10.1117/12.2296207
Publikováno v:
Journal of Electronic Materials
Journal of Electronic Materials, 2014, 43 (8), pp.2908-2914. ⟨10.1007/s11664-014-3147-9⟩
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2014, 43 (8), pp.2908-2914. ⟨10.1007/s11664-014-3147-9⟩
Journal of Electronic Materials, 2014, 43 (8), pp.2908-2914. ⟨10.1007/s11664-014-3147-9⟩
Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2014, 43 (8), pp.2908-2914. ⟨10.1007/s11664-014-3147-9⟩
Nitrogen, phosphorus, arsenic, and antimony ions were implanted in Hg0.3Cd0.7Te (MCT) layers under the same implantation conditions. An identical annealing process was then applied to these layers to eradicate implantation damage and to activate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ee4bdbcd1160a453b92e8e504b68b54
https://doi.org/10.1007/s11664-014-3147-9
https://doi.org/10.1007/s11664-014-3147-9
Autor:
G. Bourgeois, Alain Manissadjian, Gérard Destefanis, Jean-Paul Barnes, Laurent Rubaldo, S. Viollet-Bosson, A. Kerlain, Sylvain Gout, F. Milesi, O. Gravrand, N. Baier, L. Mollard, C. Lobre
Publikováno v:
Journal of Electronic Materials. 43:802-807
This paper reports on recent developments made at the DEFIR joint laboratory on fabrication of planar p-on-n arsenic (As)-ion-implanted HgCdTe photodiodes. Our infrared focal-plane arrays (IRFPAs) cover a wide spectral range, from the short-wave infr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::648737cab2baae7f795e586e5c9ad864
https://doi.org/10.1007/s11664-013-2809-3
https://doi.org/10.1007/s11664-013-2809-3