Zobrazeno 1 - 10
of 62
pro vyhledávání: '"C. Leyris"'
Publikováno v:
IEEE Transactions on Electron Devices. 58:2310-2316
Low-frequency noise (LFN) of high-k/metal stack nMOS and pMOS transistors is experimentally studied. Results obtained on 32-nm complementary metal-oxide-semiconductor (CMOS) technologies, including LFN spectra and normalized power spectral density da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba57b316d4b197cbf117eff9ed7bfe4c
https://doi.org/10.1109/ted.2011.2141139
https://doi.org/10.1109/ted.2011.2141139
Autor:
B. Giffard, P. Coudrain, C. Lagahe-Blanchard, X. Gagnard, Perrine Batude, P. Magnan, Pascal Ancey, M. Vinet, Yvon Cazaux, A. Pouydebasque, C. Leyris, A. Castex
Publikováno v:
IEEE Transactions on Electron Devices. 56:2403-2413
A new 3-D CMOS image sensor architecture is presented as a potential candidate for submicrometer pixels. To overcome the scaling challenge related to miniaturized pixel design rules, far beyond traditional 3-D stacking alignment capabilities, a seque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8765ab529e36ba30321fd1ea786b4c
https://doi.org/10.1109/ted.2009.2030990
https://doi.org/10.1109/ted.2009.2030990
Autor:
L. Depoyan, Alain Chantre, S. Montusclat, Malick Diop, Pascal Chevalier, M. Buczko, C. Leyris, Sorin P. Voinigescu, K.H.K. Yau, A. Margain, N. Derrier, S. Boret, S.T. Nicolson, Nicolas Loubet, S. Pruvost, G. Avenier, Nathalie Revil, Didier Dutartre, J. Bouvier, Daniel Gloria, G. Troillard
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2312-2321
This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2426966728ff3b39a43ccaaae889c1b7
https://doi.org/10.1109/jssc.2009.2024102
https://doi.org/10.1109/jssc.2009.2024102
Autor:
Remi Beneyton, Simon Deleonibus, Sebastien Haendler, Pascal Gouraud, E. Deloffre, Tomasz Skotnicki, Claire Fenouillet-Beranger, Sébastien Barnola, C. Laviron, X. Garros, L. Tosti, P. Perreau, Nicolas Loubet, M. Casse, T. Salvetat, C. Leyris, Francois Leverd, Mickael Gros-Jean, P. Scheiblin, Francois Andrieu, F. Allain, Stephane Denorme, Loan Pham-Nguyen, Roland Pantel, C. Buj, L. Clement, O. Faynot, M. Marin
Publikováno v:
Solid-State Electronics. 53:730-734
In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX (Buried Oxide) thicknesses with or without ground plane (GP). With a simple high-k/metal gate structure, the 32 nm devices exhibits Ion/Ioff performances well suited for l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecf6801aa16c5c0167c65a7890dfc8a8
https://doi.org/10.1016/j.sse.2009.02.009
https://doi.org/10.1016/j.sse.2009.02.009
Autor:
Bernard Pierre Orsal, R. Alabedra, J.-P. Tourrenc, Mikhael Myara, C. Leyris, Philippe Signoret, Jean-Philippe Perez
Publikováno v:
IEEE Transactions on Electron Devices. 52:928-933
We report on electrical noise measurements on both Hg/sub 0.7/Cd/sub 0.3/Te test patterns and hybrid 320 /spl times/ 256 focal plane array in order to explain the low-frequency pixel flickering physical origin. Dark and under infrared illumination te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7daa1bb3f19623b8bae79e9a62c495ed
https://doi.org/10.1109/ted.2005.846328
https://doi.org/10.1109/ted.2005.846328
Publikováno v:
Analusis
Analusis, EDP Sciences, 2000
Analusis, EDP Sciences, 2000
International audience; Odour emissions from various sources are of increasing concern to the public. Considering areal sources, there is need for the development of reliable methods for the measurement of odour emissions because none is yet accepted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eccb8688681d56b93fc1493f97deca33
https://doi.org/10.1051/analusis:2000280199
https://doi.org/10.1051/analusis:2000280199
Autor:
C. Fenouillet-Beranger, P. Perreau, L. Pham-Nguyen, S. Denorme, F. Andrieu, L. Tosti, L. Brevard, O. Weber, S. Barnola, T. Salvetat, X. Garros, M. Casse, M. Cassé, C. Leroux, J.P Noel, O. Thomas, B. Le-Gratiet, F. Baron, M. Gatefait, Y. Campidelli, F. Abbate, C. Perrot, C. de-Buttet, R. Beneyton, L. Pinzelli, F. Leverd, P. Gouraud, M. Gros-Jean, A. Bajolet, C. Mezzomo, C. Leyris, S. Haendler, D. Noblet, R. Pantel, A. Margain, C. Borowiak, E. Josse, N. Planes, D. Delprat, F. Boedt, K. Bourdelle, B.Y. Nguyen, F. Boeuf, O. Faynot, T. Skotnicki
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
In this paper, we present FD-SOI with High-K and Single Metal gate as a possible candidate for LP multimedia technology. Dual gate oxide co-integrated devices with EOT 17A/V dd 1.1V and 29A/V dd 1.8V are reported. The interest of Ultra-Thin Buried Ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994e16265336178cb061f24a3f45c9d2
https://doi.org/10.1109/iedm.2009.5424251
https://doi.org/10.1109/iedm.2009.5424251
Autor:
Y. Campidelli, Konstantin Bourdelle, Pascal Gouraud, Roland Pantel, Antoine Cros, K. Kusiaku, C. Laviron, Stephane Denorme, Thomas Skotnicki, T. Salvetat, C. Leyris, B. Le-Gratiet, G. Ghibaudo, Francois Leverd, Frederic Boeuf, Hubert Moriceau, Sébastien Barnola, J.-L. Huguenin, Sebastien Haendler, Remi Beneyton, F. Fournel, C. Borowiak, D. Fleury, L. Clement, P. Perreau, G. Bidal, Nicolas Loubet, Pierre Morin
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
For the first time we demonstrate the CMOS integration of undoped fully-depleted Ultra Thin Body and BOX devices (UTB2) with (110)/(100) substrate crystal orientation for pFET and nFET respectively. For this, we used an original 3D-folded Bulk+/Silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20eb9ee413ad9993226e3093dab2d483
https://doi.org/10.1109/iedm.2009.5424247
https://doi.org/10.1109/iedm.2009.5424247
Publikováno v:
39th European Solid-State Device Research Conference (ESSDERC'09)
39th European Solid-State Device Research Conference (ESSDERC'09), Sep 2009, Athènes, Greece
39th European Solid-State Device Research Conference (ESSDERC'09), Sep 2009, Athènes, Greece
This paper presents reliability investigations on specific CMOS transistors for image sensors applications. Reliability tests under sunlight illumination show an ageing effect of the transistors. It is shown that the degradation of the transfer gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebcfefe370a64a22f8b93501db954b82
https://hal.archives-ouvertes.fr/hal-00603718
https://hal.archives-ouvertes.fr/hal-00603718
Publikováno v:
Proceedings of ICMTS, ISBN 978-1-4244-4259-1, IEEE
IEEE International Conference on Microelectronic Test Structures
IEEE International Conference on Microelectronic Test Structures, Apr 2009, Oxnard, United States. pp.62-67
HAL
IEEE International Conference on Microelectronic Test Structures
IEEE International Conference on Microelectronic Test Structures, Apr 2009, Oxnard, United States. pp.62-67
HAL
In this paper, a mismatch test structure in standard pair configuration using Kelvin method is introduced to better estimate the MOSFET local electrical fluctuations in sub-hundred nanometer technologies. Considering this test structure configuration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c064a8a63110f309a7cd71896b32356
https://hal.archives-ouvertes.fr/hal-00603793
https://hal.archives-ouvertes.fr/hal-00603793