Zobrazeno 1 - 10
of 206
pro vyhledávání: '"C. Lanzieri"'
Autor:
C. Lanzieri, A. Salvucci, A. Suriani, G. Polli, M. Vittori, Rocco Giofre, M. Feudale, Sergio Colangeli, Walter Ciccognani, Ernesto Limiti
Publikováno v:
RWS
This paper describes the design and experimental characterization of a C-Band Gallium Nitride (GaN) Single Chip Front End (SCFE) designed for Synthetic Aperture Radar (SAR) systems. The SCFE is composed by a three stage High Power Amplifier (HPA), a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::538196a363a8a02dba6921c74120e037
http://hdl.handle.net/2108/243314
http://hdl.handle.net/2108/243314
Akademický článek
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Autor:
Alessandro Salvucci, Walter Ciccognani, M. Vittori, D. Carosi, Giorgio Polli, Rocco Giofre, M. Feudale, Sergio Colangeli, C. Lanzieri, Ernesto Limiti, A. Suriani
Publikováno v:
2018 22nd International Microwave and Radar Conference (MIKON).
This paper describes a Gallium Nitride (GaN) Single Chip Front End (SCFE), operating in C-Band, for Synthetic Aperture Radar (SAR) applications. The design approach and the expected performances at both single functionality and overall chip level are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52f3624c5a1ac712d4a3b9c20aea4743
https://doi.org/10.23919/mikon.2018.8405270
https://doi.org/10.23919/mikon.2018.8405270
Publikováno v:
Applied Surface Science. 187:248-252
Native or process-induced defective states may significantly affect the transport properties of silicon carbide devices. For this reason, it is of major importance to detect them and, when possible, to identify their origin. This contribution deals w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::426a94d73a855ee304701985ef5223b4
https://doi.org/10.1016/s0169-4332(01)00993-x
https://doi.org/10.1016/s0169-4332(01)00993-x
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field
Autor:
M. ORTOLANI, A. DI GASPARE, E. GIOVINE, V. FOGLIETTI, A. DORIA, E. GIOVENALE, G. MESSINA, I. SPASSOVSKY, G. P. GALLERANO, C. LANZIERI, M. PERONI AND A. CETRONIO, EVANGELISTI, Florestano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3668::5379750ad8634c7ce66bed27e09775ec
https://hdl.handle.net/11590/117394
https://hdl.handle.net/11590/117394
Autor:
Andrés Redondo-Cubero, C Lanzieri, A Pantellini, E. Muñoz, Luis Vázquez, Victoria Corregidor, M. F. Romero, Luís Alves
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f62521a9239e6133e0a1ffecc0cac493
http://hdl.handle.net/10261/98886
http://hdl.handle.net/10261/98886
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 449:268-276
A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants Na, varying from 1014 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1bd289f2106f6e5b417e633c6f1040d
https://doi.org/10.1016/s0168-9002(99)01443-6
https://doi.org/10.1016/s0168-9002(99)01443-6
Publikováno v:
The European Physical Journal B. 16:213-216
GaAs Schottky diodes, made on semi-insulating liquid encapsulated Czochralski grown material with concentrations of acceptor dopants \(\) varying from 1014 to 1017 cm-3, were investigated as alpha particle detectors. The charge collection efficiency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d013b3e458cc04f5ac45b094b3bfa5
https://doi.org/10.1007/s100510070221
https://doi.org/10.1007/s100510070221
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 437:354-358
The radiation detection properties of Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated. Exposure to 5.48 MeV alpha particles from a 241 Am source in vacuum led to robust signals from the detectors. The collection of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41bf9b784b204156f0c4c5a8a0907f5a
https://doi.org/10.1016/s0168-9002(99)00756-1
https://doi.org/10.1016/s0168-9002(99)00756-1
Publikováno v:
Nuclear Physics B - Proceedings Supplements. 78:527-532
Charge signal and noise were studied in non-irradiated and irradiated Schottky barrier, circular pad detectors of 100 μm thick made on semi-insulating Gallium Arsenide at Alenia S.p.A., as a function of the reverse bias (Va), the shaping time (τ) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e3f649e831fd99a68703c05b56bce5d
https://doi.org/10.1016/s0920-5632(99)00598-8
https://doi.org/10.1016/s0920-5632(99)00598-8