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A C-Band GaN Single Chip Front-End for SAR Applications

Autor: C. Lanzieri, A. Salvucci, A. Suriani, G. Polli, M. Vittori, Rocco Giofre, M. Feudale, Sergio Colangeli, Walter Ciccognani, Ernesto Limiti

Publikováno v: RWS

This paper describes the design and experimental characterization of a C-Band Gallium Nitride (GaN) Single Chip Front End (SCFE) designed for Synthetic Aperture Radar (SAR) systems. The SCFE is composed by a three stage High Power Amplifier (HPA), a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::538196a363a8a02dba6921c74120e037
http://hdl.handle.net/2108/243314

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Akademický článek

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A GaN single chip front-end for C-band synthetic aperture radars

Autor: Alessandro Salvucci, Walter Ciccognani, M. Vittori, D. Carosi, Giorgio Polli, Rocco Giofre, M. Feudale, Sergio Colangeli, C. Lanzieri, Ernesto Limiti, A. Suriani

Publikováno v: 2018 22nd International Microwave and Radar Conference (MIKON).

This paper describes a Gallium Nitride (GaN) Single Chip Front End (SCFE), operating in C-Band, for Synthetic Aperture Radar (SAR) applications. The design approach and the expected performances at both single functionality and overall chip level are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52f3624c5a1ac712d4a3b9c20aea4743
https://doi.org/10.23919/mikon.2018.8405270

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Akademický článek

COVID‐19 Infection Risk Assessment in a Kindergarten Utilizing Continuous Air Quality Monitoring Data.

Autor: Chen, Chung-Yen^1,2,3 (AUTHOR), Chen, Jia-Kun³ (AUTHOR) jkchen29@ntu.edu.tw, Chio, Chia-Pin⁴ (AUTHOR), Chen, Pau-Chung^2,3,5 (AUTHOR), Su, Ta-Chen^2,3,6 (AUTHOR) tachensu@gmail.com, Chan, Chang-Chuan³ (AUTHOR), Yang, Xiaohu (AUTHOR) xiaohuyang@xjtu.edu.cn

Publikováno v: Indoor Air. 11/12/2024, Vol. 2024, p1-17. 17p.

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Quasi-optical terahertz detectors based on compound semiconductor heterostructures

Autor: M. Ortolani (1), R. Casini (1), A. Di Gaspare (1), E. Giovine (1), V. Foglietti (1), F. Evangelisti (1), M. Peroni (2), D. Dominijanni (1), P. Romanini (2), C. Lanzieri (2), A. Cetronio (2)

Publikováno v: Documentation des 6es Journées Francaises du Terahertz., La Grande Motte, Montpellier, 2011
info:cnr-pdr/source/autori:M. Ortolani (1), R. Casini (1), A. Di Gaspare (1), E. Giovine (1), V. Foglietti (1), F. Evangelisti (1), M. Peroni (2), D. Dominijanni (1), P. Romanini (2), C. Lanzieri (2), A. Cetronio (2)/congresso_nome:Documentation des 6es Journées Francaises du Terahertz./congresso_luogo:La Grande Motte, Montpellier,/congresso_data:2011/anno:2011/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::63b15c3785b1d08cc836428e6e4fb0aa
http://www.cnr.it/prodotto/i/81672

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Deep levels in silicon carbide Schottky diodes

Autor: Felice Nava, Anna Cavallini, C. Lanzieri, Antonio Castaldini, C. Canali, L. Polenta

Publikováno v: Applied Surface Science. 187:248-252

Native or process-induced defective states may significantly affect the transport properties of silicon carbide devices. For this reason, it is of major importance to detect them and, when possible, to identify their origin. This contribution deals w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::426a94d73a855ee304701985ef5223b4
https://doi.org/10.1016/s0169-4332(01)00993-x

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Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field

Autor: M. ORTOLANI, A. DI GASPARE, E. GIOVINE, V. FOGLIETTI, A. DORIA, E. GIOVENALE, G. MESSINA, I. SPASSOVSKY, G. P. GALLERANO, C. LANZIERI, M. PERONI AND A. CETRONIO, EVANGELISTI, Florestano

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3668::5379750ad8634c7ce66bed27e09775ec
https://hdl.handle.net/11590/117394

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Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

Autor: Andrés Redondo-Cubero, C Lanzieri, A Pantellini, E. Muñoz, Luis Vázquez, Victoria Corregidor, M. F. Romero, Luís Alves

Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
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The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and sc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f62521a9239e6133e0a1ffecc0cac493
http://hdl.handle.net/10261/98886

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Detection of 0.15 THz radiation by an antenna-coupled transistor

Autor: M. Ortolani, A. Di Gaspare, F. Evangelisti, V. Foglietti, E. Giovine, A. Doria, E. Giovenale, G. P. Gallerano, G. Messina, I. Spassovsky, A. Cetronio, C. Lanzieri, M. Peroni

Publikováno v: EOS Annual Meeting 2008, Paris, France, 2008
info:cnr-pdr/source/autori:M. Ortolani, A. Di Gaspare, F. Evangelisti, V. Foglietti, E. Giovine, A. Doria, E. Giovenale, G. P. Gallerano, G. Messina, I. Spassovsky, A. Cetronio, C. Lanzieri, M. Peroni/congresso_nome:EOS Annual Meeting 2008/congresso_luogo:Paris, France/congresso_data:2008/anno:2008/pagina_da:/pagina_a:/intervallo_pagine

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::3e2ea4c35c8527a4cfca9ef82b5de44f
https://publications.cnr.it/doc/81696

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Homodyne mixing at 150 GHz in a high electron mobility transistor

Autor: M. Ortolani (a), A. Di Gaspare (a), E. Giovine (a), F. Evangelisti (a), A. Dori (b), E. Giovenale (b), G. P. Gallerano (b), A. Cetronio (c), C. Lanzieri (c), M. Peroni (c), V. Foglietti (a)

Publikováno v: IRMMW-THz 2008, pp. 462–463, Pasadena, California,USA, SEP 15-19, 2008
info:cnr-pdr/source/autori:M. Ortolani (a), A. Di Gaspare (a), E. Giovine (a), F. Evangelisti (a), A. Dori (b), E. Giovenale (b), G. P. Gallerano (b), A. Cetronio (c), C. Lanzieri (c), M. Peroni (c) and V. Foglietti (a)/congresso_nome:IRMMW-THz 2008/congresso_luogo:Pasadena, California,USA/congresso_data:SEP 15-19, 2008/anno:2008/pagina_da:462/pagina_a:463/intervallo_pagine:462–463

We explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::70789aa36d0d67f6043b2e7507863072
http://www.cnr.it/prodotto/i/81694

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