Zobrazeno 1 - 10
of 34
pro vyhledávání: '"C. Lagahe Blanchard"'
Publikováno v:
ECS Solid State Letters. 2:P47-P50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba401a112475a97f22e91ffcb230319
https://doi.org/10.1149/2.006306ssl
https://doi.org/10.1149/2.006306ssl
Autor:
B. Giffard, P. Coudrain, C. Lagahe-Blanchard, X. Gagnard, Perrine Batude, P. Magnan, Pascal Ancey, M. Vinet, Yvon Cazaux, A. Pouydebasque, C. Leyris, A. Castex
Publikováno v:
IEEE Transactions on Electron Devices. 56:2403-2413
A new 3-D CMOS image sensor architecture is presented as a potential candidate for submicrometer pixels. To overcome the scaling challenge related to miniaturized pixel design rules, far beyond traditional 3-D stacking alignment capabilities, a seque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8765ab529e36ba30321fd1ea786b4c
https://doi.org/10.1109/ted.2009.2030990
https://doi.org/10.1109/ted.2009.2030990
Publikováno v:
IEEE 2011 International SOI Conference.
Though Silicon-on-Sapphire (SOS) has many applications for RF circuits, compressive strain in the hetero-epitaxially deposited silicon film reduces the electron mobility and diminishes its high-frequency performance. To eliminate this strain, we bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fcb3e2b3d4cc608abfa45f5177036a4
https://doi.org/10.1109/soi.2011.6081706
https://doi.org/10.1109/soi.2011.6081706
Publikováno v:
2011 IEEE International Conference on IC Design & Technology.
Smart Stacking™ is a wafer-to-wafer stacking technology of partially or fully processed wafers. This technology enables transferring very thin layers in a high volume manufacturing environment. The core technologies are surface conditioning, low te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9630b4db37678ad35c07b7b5db3e440
https://doi.org/10.1109/icicdt.2011.5783202
https://doi.org/10.1109/icicdt.2011.5783202
Autor:
C. Lagahe-Blanchard, B. Aspar
Publikováno v:
2009 IEEE International SOI Conference.
Wafer stacking technologies are today available for different 3D integration schemes. These are compatible with back end of line CMOS processes and packaging. Smart Stacking technology and Copper to Copper direct bonding processes were described as k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f33ca5a9a8047c3a2c12cb7edf3cab2
https://doi.org/10.1109/soi.2009.5318779
https://doi.org/10.1109/soi.2009.5318779
Publikováno v:
2006 5th IEEE Conference on Sensors.
A new method to manufacture Capacitive Micromachined Ultrasonic Transducers (eMUT) combining a wafer bonding and a sacrificial layer processes is introduced. Devices with monocrystalline silicon membranes over a polysilicon electrode have been manufa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f9ce6823332bbe2eaa83867ac5111ac
https://doi.org/10.1109/icsens.2007.355866
https://doi.org/10.1109/icsens.2007.355866
Autor:
B. Ghyselen, S. Pocas, P. Perreau, C. Lagahe-Blanchard, Bruce Faure, I. Cayrefourq, N. Kernevez, J.M. Hartman, T. Ernst, Fabrice Letertre, H. Moriceau, A. Beaumont, O. Rayssac, E. Jalaguier, Franck Fournel, Chrystel Deguet, Cecile Aulnette, C. Richtarch
Publikováno v:
Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment ISBN: 9781402030116
In microelectronics, photonics, opto-electronics, high frequency or high power device applications, the needs for specific substrate solutions are more and more required. Smart Cut™ technology appears as the technological answer that enables the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::448ece79ba85a1a017b1e7bee5c1acb0
https://doi.org/10.1007/1-4020-3013-4_4
https://doi.org/10.1007/1-4020-3013-4_4
Autor:
Carlos Mazure, Chrystel Deguet, A. Beaumont, P. Perreau, Bruno Ghyselen, F. Chieu, N. Kernevez, Y. M. Le Vaillant, Bruce Faure, C. Morales, S. Personnic, C. Lagahe-Blanchard, Jean-Michel Hartmann, Frederic Allibert, S. Pocas, Fabrice Letertre, C. Richtarch, Jalaguier, J. Dechamp
Publikováno v:
MRS Proceedings. 809
First results on formation of thin film GeOI structures by the Smart Cut™ technology are presented in this paper. Thin single crystal layers of Ge have been successfully transferred, via oxide bonding layer, onto standard Si substrates with diamete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6cbcee000e54f14d49b05fca5aeb416
https://doi.org/10.1557/proc-809-b4.4
https://doi.org/10.1557/proc-809-b4.4
Publikováno v:
Wafer Bonding ISBN: 9783642059155
Wafer bonding was established in the 1980s as convenient and reliable means of producing multilayer structures consisting of crystalline and amorphous layers [1,2]. The science of wafer bonding was developed and the practice of getting two flat wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72cbcc47bb213711116449130f3acb1e
https://doi.org/10.1007/978-3-662-10827-7_3
https://doi.org/10.1007/978-3-662-10827-7_3
Autor:
Phuong Nguyen, C. Aulnette, E. Guiot, K.K. Bourdelle, I. Cayrefourcq, C. Deguet, S. Sartori, A. Tauzin, C. Lagahe-Blanchard, A. Soubie
Publikováno v:
ECS Meeting Abstracts. :552-552
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9392471a517efaaee63c08a7b4e2abd4
https://doi.org/10.1149/ma2005-01/12/552
https://doi.org/10.1149/ma2005-01/12/552