Zobrazeno 1 - 6
of 6
pro vyhledávání: '"C. L. Claeys"'
Publikováno v:
Journal of The Electrochemical Society. 139:1180-1185
Chemicals from various suppliers were tested for the metal contamination levels left on silicon wafers after cleaning. During the investigations, hydrochloric acids and ammonium hydroxides from three vendors and hydrogen peroxides from four vendors,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b9c1e921524dba327443a7b1d5acc86
https://doi.org/10.1149/1.2069362
https://doi.org/10.1149/1.2069362
Autor:
C. L. Claeys
Publikováno v:
Microelectronics, Microsystems and Nanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e6242da72e93d45d264de71fe55644
https://doi.org/10.1142/9789812810861_0079
https://doi.org/10.1142/9789812810861_0079
Publikováno v:
ECS Meeting Abstracts. :1234-1234
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a9441a758c169248d4e4b4564ca1c25
https://doi.org/10.1149/ma2006-02/25/1234
https://doi.org/10.1149/ma2006-02/25/1234
Autor:
C. L. Claeys
Publikováno v:
Process and Device Simulation for MOS-VLSI Circuits ISBN: 9789400968448
The world-wide research activities towards integrated circuits with larger chip sizes and smaller device geometries require a better understanding of the different processing steps and the development of very accurate models to describe the basic pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b20c23094ea3af41b3c0a864f70f3a
https://doi.org/10.1007/978-94-009-6842-4_3
https://doi.org/10.1007/978-94-009-6842-4_3
Autor:
C L Claeys, P. Rai-Choudhury, Pierluigi Bellutti, Maurizio Boscardin, Dalla Betta, Gian Franco, Ferrario, Lorenza, Gregori, Paolo, Nicola Zorzi
Publikováno v:
Fondazione Bruno Kessler-IRIS
Maurizio Boscardin
Maurizio Boscardin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e2e2d10dc36b8371f3c480d7a82a8b20
https://cris.fbk.eu/handle/11582/57
https://cris.fbk.eu/handle/11582/57
Ultra-thin body double-gate (DG) MOS structures with strained silicon are investigated by the solution of the 1D Schrodinger and Poisson equations, with open boundary conditions on the wave functions in the gate electrodes. The electrostatics of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f803928024f5b77f3ef1fd698b8314e0
http://hdl.handle.net/11585/12832
http://hdl.handle.net/11585/12832