Zobrazeno 1 - 10
of 30
pro vyhledávání: '"C. Kosik-Williams"'
Autor:
Marika Edoff, C. Kosik Williams, K. Fuller, K. Zhang, Adam Hultqvist, Bruce G. Aitken, Pedro M. P. Salomé, Viktor Fjällström
Publikováno v:
IEEE Journal of Photovoltaics. 4:1659-1664
The presence of Na in Cu(In,Ga)Se 2 layers increases the electrical performance of this type of thin-film solar cell. A detailed comparison of incorporating Na in the CIGS layer by two different methods is performed by evaluating several hundred devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fddafe39c26db115eff8b45ee5dbf995
https://doi.org/10.1109/jphotov.2014.2357261
https://doi.org/10.1109/jphotov.2014.2357261
Autor:
K. Fuller, Viktor Fjällström, Adam Hultqvist, C. Kosik Williams, Bart Vermang, K. Zhang, Bruce G. Aitken, Marika Edoff, Pedro M. P. Salomé
Publikováno v:
Solar Energy Materials and Solar Cells. 123:166-170
The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga)Se 2 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61f060a3f589324da8357f172917af1d
https://doi.org/10.1016/j.solmat.2014.01.006
https://doi.org/10.1016/j.solmat.2014.01.006
Autor:
Pedro M. P. Salomé, Adam Hultqvist, K. Fuller, Marika Edoff, C. Kosik Williams, Viktor Fjällström, K. Zhang, K. Vaidyanathan, Bruce G. Aitken
Publikováno v:
IEEE Journal of Photovoltaics. 3:852-858
In this paper, Cu(In,Ga)Se2 (CIGS) thin-film solar cells are prepared on nominally alkali-free glass substrates using an in-line CIGS growth process. As compared with, for example, borosilicate glass or quartz, the glass is engineered to have similar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b83af5cb20bfe2f6a764126cae78589
https://doi.org/10.1109/jphotov.2013.2247655
https://doi.org/10.1109/jphotov.2013.2247655
Autor:
T. J. Tredwell, R. Mruthyunjaya, Jung-Su Choi, Jin Jang, C. Kosik-Williams, Mallory Mativenga, Won Jae Choi, Min Hyuk Choi, Eric J. Mozdy
Publikováno v:
Journal of The Electrochemical Society. 158:J169-J174
Hot carrier (HC) instability of thin-film transistors (TFTs) fabricated on single-crystal,silicon-on-glass (SiOG) substrates is studied. The formation of the SiOG substrate is achieved by the transfer of a single-crystal silicon film to a display-gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76c097711ba75f648637039a97d9752
https://doi.org/10.1149/1.3573769
https://doi.org/10.1149/1.3573769
Autor:
W. L. Rance, Matthew O. Reese, Timothy A. Gessert, Myles A. Steiner, K. Fuller, Darius Kuciauskas, Jian V. Li, Teresa M. Barnes, C. Kosik Williams, Conrad Hamilton, Bruce G. Aitken, K. Zhang, James M. Burst
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
CdTe device performance is strongly dependent on the quality of the back contact and the ability of the back contact to introduce a copper doping profile in the CdTe layer itself. Copper-doped ZnTe (ZnTe:Cu) is a nearly ideal contact material for CdT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef11be4dfd18fcb07df90190304eeb7
https://doi.org/10.1109/pvsc.2012.6317598
https://doi.org/10.1109/pvsc.2012.6317598
Autor:
Karl D. Hirschman, James Gregory Couillard, C.G. Shea, Robert George Manley, C. Kosik Williams, Patricia M. Meller, A.M. McCabe, Jayantha Senawiratne
Publikováno v:
2009 IEEE International SOI Conference.
The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (≪ 600 °C) fabrication process are described. The devices from the SiOG sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8d83829562419755440ef29433c3e2
https://doi.org/10.1109/soi.2009.5318791
https://doi.org/10.1109/soi.2009.5318791
Autor:
Jayantha Senawiratne, Johannes Moll, Jeffrey Scott Cites, C. Kosik Williams, Patrick G. Whiting, James Gregory Couillard
Publikováno v:
2009 IEEE International SOI Conference.
We investigated ion implantation induced electrically active defects in p-type silicon using Deep Level Transient Spectroscopy (DLTS) and photoconductivity spectroscopy at cryogenic temperatures. Implantation related deep traps in H 2 , B11, and P31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03788d017efffc515f738873188d9142
https://doi.org/10.1109/soi.2009.5318742
https://doi.org/10.1109/soi.2009.5318742
Autor:
Y. Akbas, L Crandall, C. Kosik Williams, John Serafini, Roman Sobolewski, Robert Alan Bellman
Publikováno v:
Journal of Physics: Conference Series. 647:012032
We present a femtosecond pump-probe spectroscopy approach for characterization of amorphous and microcrystalline silicon films grown on glass substrates. Such films are presently being considered as absorbers in tandem-type, Si-based photovoltaic cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f4a4b6ae9783dc067a7224dc915f21b
https://doi.org/10.1088/1742-6596/647/1/012032
https://doi.org/10.1088/1742-6596/647/1/012032
Autor:
Viktor Fjällström, Ke Zhang, C. Kosik Williams, Pedro M. P. Salomé, Bruce G. Aitken, Kate Fuller, Yong Shi, Adam Hultqvist, Marika Edoff
Publikováno v:
Journal of Applied Physics. 114:094501
In this report, Cu(In,Ga)Se2, CIGS, solar cell devices have been fabricated on nominally alkali free glasses with varying coefficients of thermal expansion (CTE) from 50 to 95 * 10−7/ °C. A layer of NaF deposited on top of the Mo was used to provi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd15381c401d1a8bd1b80e32ccbc7350
https://doi.org/10.1063/1.4819802
https://doi.org/10.1063/1.4819802
Autor:
Jae Hwan Oh, Ji-Su Ahn, Sungchul Kim, Jae Won Choi, C. Kosik Williams, Jin Jang, James Gregory Couillard, Jun Hyuk Cheon
Publikováno v:
Electrochemical and Solid-State Letters. 13:J85
We have studied the impact of off-bias stress on the performance of thin film transistors (TFTs) fabricated on single crystalline silicon-on-glass substrates. The p-channel TFT transfer characteristics typically exhibit excellent on-state performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4e9289f98d63f436a6f9e704ecd3e4
https://doi.org/10.1149/1.3416325
https://doi.org/10.1149/1.3416325