Zobrazeno 1 - 10
of 117
pro vyhledávání: '"C. Kernstock"'
Autor:
C. Kernstock, Zlatan Stanojevic, Chen-Ming Tsai, Ferdinand Mitterbauer, Oskar Baumgartner, Georg Strof, Markus Karner
Publikováno v:
IEEE Transactions on Electron Devices. 68:5400-5406
We present an in-depth discussion on the subband Boltzmann transport (SBTE) methodology, its evolution, and its application to the simulation of nanoscale MOSFETs. The evolution of the method is presented from the point of view of developing a commer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7582337e225700b308059910f92e463d
https://doi.org/10.1109/ted.2021.3079884
https://doi.org/10.1109/ted.2021.3079884
Autor:
M. Thesberg, Z. Stanojevic, O. Baumgartner, C. Kernstock, D. Leonelli, M. Barci, X. Wang, X. Zhou, H. Jiao, G.L. Donadio, D. Garbin, T. Witters, S. Kundu, H. Hody, R. Delhougne, G. Kar, M. Karner
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4162c07533c5f97553bcd5bf1c7e9376
http://arxiv.org/abs/2211.06084
http://arxiv.org/abs/2211.06084
Akademický článek
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Autor:
D. Verreck, A. Arreghini, F. Schanovsky, G. Rzepa, Z. Stanojevic, F. Mitterbauer, C. Kernstock, O. Baumgartner, M. Karner, G. Van den bosch, M. Rosmeulen
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26095c7e1e447b9e8c45dc618f0173b3
https://doi.org/10.1109/iedm19574.2021.9720506
https://doi.org/10.1109/iedm19574.2021.9720506
Autor:
Zlatan Stanojevic, G. Strof, F. Mitterbauer, Markus Karner, Oskar Baumgartner, H. W. Karner, Franz Schanovsky, C. Kernstock, Gerhard Rzepa
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Variability increases with downscaling, making it a vital component in the assessment of upcoming technologies. We use a variability-aware DTCO flow, which seamlessly integrates accurate TCAD simulations with industry-proven SPICE solutions. The impa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f251a8641a0a5e5f808dc672fd8b5fe
https://doi.org/10.1109/sispad54002.2021.9592527
https://doi.org/10.1109/sispad54002.2021.9592527
Autor:
Franz Schanovsky, Maarten Rosmeulen, Devin Verreck, Antonio Arreghini, C. Kernstock, Zlatan Stanojevic, Markus Karner, Oskar Baumgartner, Gerhard Rzepa
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
We present a TCAD model for the accurate description of charging kinetics of trapping layers in 3D gate-all-around VNAND SONOS devices. We build on the established description of the trapping layer as trap-rich semiconductor and show that a strongly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f922e1d716f3959df60cd30cb8420b7
https://doi.org/10.1109/imw51353.2021.9439598
https://doi.org/10.1109/imw51353.2021.9439598
Autor:
Zlatan Stanojevic, C. Kernstock, M. Karner, B. Parvais, Jerome Mitard, Gerhard Rzepa, Z. Wu, Y. Xiang, Geert Hellings, G. Strof, F. Mitterbauer, Thomas Chiarella, O. Baumgartner, D. Claes, Ben Kaczer, Dimitri Linten, H. W. Karner, Jacopo Franco, Franz Schanovsky, Pieter Weckx
Publikováno v:
IRPS
Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef56e782ee4e742a632ebd9b3aa2b662
https://doi.org/10.1109/irps46558.2021.9405172
https://doi.org/10.1109/irps46558.2021.9405172
Autor:
J. P. Bastos, Robin Degraeve, Antonio Arreghini, Markus Karner, F. Mitterbauer, Arnaud Furnemont, C. Kernstock, G. Van den bosch, Devin Verreck, Franz Schanovsky
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We present a TCAD model that reproduces large single trap V T -shifts (>100mV) in 3-D NAND flash read current by means of targeted charge placement based on linear response. With this model, we investigate worst-case V T -shifts in terms of bias cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0a926665a26ed02ef160709e17e875
https://doi.org/10.1109/iedm19573.2019.8993552
https://doi.org/10.1109/iedm19573.2019.8993552
Autor:
O. Baumgartner, C. Kernstock, G. Strof, Franz Schanovsky, M. Karner, K. Steiner, Zlatan Stanojevic
Publikováno v:
ESSDERC
We present the first practical TCAD-based work flow for design-technology co-optimization (DTCO) of standard cells. The flow consists of parametric cell layout templates, layout-based structure generation, mixed-mode transient electrical device simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88b25a1f749172187a5b7064b08f2de9
https://doi.org/10.1109/essderc.2018.8486887
https://doi.org/10.1109/essderc.2018.8486887
Autor:
Lidija Filipovic, Hans Kosina, C. Kernstock, Zlatan Stanojevic, Markus Karner, Philipp Prause, Oskar Baumgartner
Publikováno v:
Solid-State Electronics. 112:37-45
In this paper we develop several extensions to semi-classical modeling of low-field mobility, which are necessary to treat planar and non-planar channel geometries on equal footing. We advance the state-of-the-art by generalizing the Prange-Nee model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca1a78c2f25ada27b869e681f9a8eed
https://doi.org/10.1016/j.sse.2015.02.008
https://doi.org/10.1016/j.sse.2015.02.008