Zobrazeno 1 - 10
of 275
pro vyhledávání: '"C. Kazmierski"'
Publikováno v:
Chest. 162:A1423
Publikováno v:
TP19. TP019 QUALITY, PROCESS, AND OUTCOMES IN ACUTE AND CRITICAL CARE.
Publikováno v:
TP81. TP081 OCTOPUS? GARDEN - PULMONARY HYPERTENSION AND OTHER CASE REPORTS.
Introduction Methamphetamine has been identified as a risk factor for the development of pulmonary hypertension (PH), though the mechanism remains unclear. We present a case of reversible, symptomatic PH in a patient consuming methamphetamine. Case P
Publikováno v:
In Chest October 2022 162(4) Supplement:A1423-A1423
Publikováno v:
Le Journal de Physique IV. 10:Pr8-123
Nous avons realise des diodes electroluminescentes basees sur un puits quantique InGaAs emettant a 960 nm, place dans une microcavite en GaAs d'epaisseur de l'ordre de 100 nm delimitee par deux couches Ag. Ces couches metalliques servent de miroirs p
Autor:
C. Meriadec, T. Rivera, F Olivier-martin, Jean-Louis Oudar, Isabelle Sagnes, Bernard Sermage, J.P. Debray, Jean-Christophe Harmand, G Ungaro, C. Kazmierski, R. Madani, R. Raj
Publikováno v:
Journal of Crystal Growth. :837-840
A 1.48 μm vertical cavity structure was realised on InP substrate including a n-type AlGaAsSb/AlAsSb bottom mirror, a λ thick AlGaInAs cavity with strained quantum wells, and a fused p-type AlGaAs/GaAs top mirror. The structure exhibits laser emiss
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:330-335
We report on an extensive experimental study of the barrier strain influence on the high-speed properties of compressively strained quaternary (InGaAsP) multiquantum-well (MQW) lasers emitting at 1.55 /spl mu/m. In the design of strained MQW laser st
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers, 1995, 1 (2), pp.371-374. ⟨10.1109/2944.401217⟩
IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers, 1995, 1 (2), pp.371-374. ⟨10.1109/2944.401217⟩
We introduce a new concept for gratings, based on a spatial carrier modulation, induced by current for optoelectronic devices. The concept is experimentally tested on gain coupled lasers, showing predicted features as high-power, low-linewidth, and l
Publikováno v:
IEEE Journal of Quantum Electronics. 29:1676-1681
The ability of the InGaAs/InGaAlAs multi-quantum-well (MQW) system to achieve ultra-low-chirp operation under 10-Gb/s operation is experimentally demonstrated. The MQW active layer has been grown by a solid-source molecular beam epitaxy (MBE) method.