Zobrazeno 1 - 10
of 22
pro vyhledávání: '"C. K. Swartz"'
Publikováno v:
Proceedings of the 25th Intersociety Energy Conversion Engineering Conference.
The mini-dome Fresnel lens concentrator array is a high-efficiency, light-weight space photovoltaic array concept that is being developed by the NASA Lewis Research Center and ENTECH, Inc. The three critical elements of the array concept are the Fres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5146c22301d272f869efd22b4c869525
https://doi.org/10.1109/iecec.1990.716964
https://doi.org/10.1109/iecec.1990.716964
Publikováno v:
Proceedings of the 25th Intersociety Energy Conversion Engineering Conference.
Recent research efforts, representing new directions in InP solar cell research, are reviewed. These include heteroepitaxial growth on silicon and gallium arsenide substrates, V-grooved cells, large area high efficiency cells and surface passivation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe9d4be643149c4d681320353dbed88b
https://doi.org/10.1109/iecec.1990.716962
https://doi.org/10.1109/iecec.1990.716962
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing on the performance of InP solar cells. For carrier removal, the num
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11537ada9577e5873528210006255625
https://doi.org/10.1109/iciprm.1992.235644
https://doi.org/10.1109/iciprm.1992.235644
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
InP solar cells, epitaxially grown on GaAs substrates with intervening Ga/sub x/In/sub 1-x/As layers, were irradiated by protons over a range of energies from 10 to 0.5 MeV. Cell performance, temperature dependencies and carrier removal were determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb7684d7dfecc3ed299728031741d817
https://doi.org/10.1109/iciprm.1993.380670
https://doi.org/10.1109/iciprm.1993.380670
Autor:
David Scheiman, David J. Brinker, Carlos Vargas-Aburto, Raj K. Jain, Irving Weinberg, C. K. Swartz
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
Indium phosphide solar cells are known to be significantly more radiation resistant than either gallium arsenide or silicon. Their growth by heteroepitaxy offers additional advantages over growth by homoepitaxy. InP cells have been grown on lower cos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb4462e95b79025c5319f62ff109cc2
https://doi.org/10.1109/wcpec.1994.521638
https://doi.org/10.1109/wcpec.1994.521638
Autor:
Henry B. Curtis, Irving Weinberg, David J. Brinker, Mircea Faur, Phillip P. Jenkins, C. K. Swartz
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
Heteroepitaxial (InP/GaAs) and homoepitaxial (InP/InP) solar cells were irradiated by 1 MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe2e4895a42d0888cadd10e0738f592a
https://doi.org/10.1109/pvsc.1991.169444
https://doi.org/10.1109/pvsc.1991.169444
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
The apparently unrelated phenomena of temperature dependency, carrier removal, and photoluminescence are shown to be influenced by a common factor, the high dislocation density encountered in heteroepitaxial InP solar cells. In temperature dependency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ced3bdc4ef142caabb2e6cf647e375a
https://doi.org/10.1109/iciprm.1991.147291
https://doi.org/10.1109/iciprm.1991.147291
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
NASA Lewis and ENTECH have been developing a high-efficiency, lightweight space photovoltaic concentrator array. The emphasis of the program has shifted to fabrication and testing of the minidome Fresnel lens and other array components. Prototype len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c06a2f632057a0deb4c8b6ec7c19835a
https://doi.org/10.1109/pvsc.1990.111817
https://doi.org/10.1109/pvsc.1990.111817
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The properties of heteroepitaxial InP solar cells were determined both before and after 10 MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c7873f79abe6da81487e5bffb4c93ba
https://doi.org/10.1109/pvsc.1990.111812
https://doi.org/10.1109/pvsc.1990.111812
Publikováno v:
Journal of Applied Physics. 72:5509-5511
A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efefb295964b0533ecb3c4d70e0e9634
https://doi.org/10.1063/1.351946
https://doi.org/10.1063/1.351946