Zobrazeno 1 - 10
of 12
pro vyhledávání: '"C. K. Pao"'
Autor:
D. C. Wang, C. K. Pao, M. Hu, Fan Ren, Stephen J. Pearton, C. P. Wen, C. S. Wu, Cammy R. Abernathy
Publikováno v:
IEEE Transactions on Electron Devices. 39:2701-2706
Damage-free, dry-etched 0.25- mu m T-shape gate pseudomorphic InGaAs channel HEMTs have been demonstrated. A Freon-12-based discharge was used in either electron cyclotron resonance (ECR) or reactive ion etching (RIE) systems to perform the gate rece
Publikováno v:
Proceedings of the IEEE. 79:342-354
The development of a W-band (75-110 GHz) monolithic receiver, culminating in a three-chip multifunctional monolithic microwave integrated circuit (MMIC) receiver front-end, is described. The heart of the receiver is a four-channel multiplexer, with e
Publikováno v:
Proceedings of 1997 Wireless Communications Conference.
In the past, millimeter-wave technology applications have been dominated by high-end military sensor and communications applications where cost, though important, was not the primary consideration. The same performance characteristics that made milli
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for the fabrication of high power X-band monolithic amplifiers. The material structure and gate recess process were engineered s
Publikováno v:
Directions for the Next Generation of MMIC Devices and Systems ISBN: 9781489914828
Rapid expansion of microwave systems in phased array radar and commercial applications in the emerging wireless communication system areas requires affordable, compact, lightweight, reliable, solid state, integrated microwave transmit/receive (T/R) m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56b1abcf9cf6c1b9387d73f5d2053588
https://doi.org/10.1007/978-1-4899-1480-4_44
https://doi.org/10.1007/978-1-4899-1480-4_44
Autor:
C. R. Abernathy, D. C. Wang, Donald M. Tennant, B. M. Paine, C. S. Wu, C. K. Pao, M. Hu, C. P. Wen, Rose Fasano Kopf, D.J. Resnick, Fan Ren, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2949
Dry‐etching technologies for submicron gate recess and resist pattern transfer are demonstrated with bilayer and trilevel resist systems for power and digital applications, respectively. For power applications, damage‐free, dry‐etched 0.25 μm
Publikováno v:
Millimeter Wave Technology IV and RF Power Sources.
Recent advances in millimeter-wave monolithic integrated circuits (MiCs) are presented. Performances of several MICs are summarized. These include a GHinLi oscillator at 68 GHz with an output power of 1 mW, a W-band balanced mixer with a minimum conv
Autor:
S, SCHUJMAN, C K, LI, N, CHANG, C K, PAO, M S, YUAN, K Y, YEH, C M, LU, Y S, TENG, M C, LIU, W C, LIU, T C, HSU
Publikováno v:
Chinese medical journal (Peking, China : 1932). 78(1)
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