Zobrazeno 1 - 10
of 59
pro vyhledávání: '"C. K. Chia"'
Publikováno v:
APL Materials, Vol 1, Iss 3, Pp 032121-032121 (2013)
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar
Externí odkaz:
https://doaj.org/article/db29b40da33d40d8ae88b6ddf4cce86f
Autor:
Arthur C. K. Chia, Mihye Cho
Publikováno v:
Realities and Aspirations for Asian Youth ISBN: 9780429265938
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862efbc153378d231f523ee1dc436b92
https://doi.org/10.4324/9780429265938-3
https://doi.org/10.4324/9780429265938-3
Autor:
Arthur C. K. Chia, Mihye Cho
Publikováno v:
Children's Geographies. 16:27-38
In this paper, we explore the evolving norms and dispositions of creativity and enterprise of engineering students using data gathered from a newly established technology and engineering-focused university called ‘UniTech’ located in Singapore. B
Publikováno v:
Electronic Materials Letters. 12:365-370
One diode-one resistor (1D1R) memory array consisting of Pt/TaOx/Al memory element and GaAs selection diode was firstly demonstrated. The resistive switching behavior of the memory devices with variety of active areas from 5 μm to 50 μm has been in
Autor:
S. Y. Sim, C. K. Chia, W. M. Utomo, H. H. Goh, Y. M. Y. Buswig, A. J. M. S. Lim, S. L. Kek, A. A. Bohari, C. L. Cham
This paper proposed a 7-level Cascaded H-Bridge Multilevel Inverter (CHBMI) with two diffenrent controller, ie, PID and Artificial Neural Network (ANN) controller to improve the output voltage performance and achieve a lower Total Harmonic Distortion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::0f77de1e47148930f14ebde9f4b163da
https://zenodo.org/record/4291718
https://zenodo.org/record/4291718
Autor:
Dongzhi Chi, Sandipan Chakraborty, Aneesa Iskander, Jianrong Dong, Maruf Amin Bhuiyan, Goutam Kumar Dalapati, Taeyoon Lee, Saied Masudy-panah, Chandreswar Mahata, C. K. Chia, Ren Bin Yang, Sanghamitra Dinda
Publikováno v:
Materials Letters. 156:105-108
Development of high quality p-type epitaxial gallium–arsenide (epi-GaAs) on germanium (Ge) with sub-nm surface roughness is much sought after for the next generation high speed transistors application. High quality zinc doped p-type epitaxial GaAs
Autor:
Tanmoy Das, Chhandak Mukherjee, C. K. Maiti, Dongzhi Chi, C. K. Chia, Goutam Kumar Dalapati, Chandreswar Mahata, Sing Yang Chiam
Publikováno v:
ACS Applied Materials & Interfaces. 6:3263-3274
Electrical and interfacial properties of metal-oxide-semiconductor (MOS) capacitors fabricated using atomic layer deposited bilayer TiO2/Al2O3 films on In0.53Ga0.47As/InP substrates are reported. Vacuum annealing at 350 °C is shown to improve the in
Autor:
C. K. Chia, Goutam Kumar Dalapati
Publikováno v:
IEEE Transactions on Electron Devices. 60:3435-3441
Impact ionization in novel Ge/AlxGa1-xAs (0 ≤ x ≤ 0.8) multilayer structures is investigated using numerical simulation. The simulated effective electron (α) and hole (β) ionization coefficients reveal that a large β/α ratio of up to 8 can be
Publikováno v:
ECS Transactions. 50:971-978
In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated us
Autor:
Cheng Cheh Tan, Sing Yang Chiam, Amit Das, Dongzhi Chi, C. K. Maiti, Goutam Kumar Dalapati, Chandreswar Mahata, Jingyan Dong, Sanatan Chattopadhyay, Hui Ru Tan, C. K. Chia
Publikováno v:
ACS Applied Materials & Interfaces. 5:949-957
High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation