Zobrazeno 1 - 10
of 71
pro vyhledávání: '"C. J. Summers"'
Autor:
Brian K. Tanner, Zhitao Kang, Douglas P. Halliday, J. T. Mullins, Ian Radley, C. J. Summers, F. Dierre
Publikováno v:
Journal of materials science : materials in electronics, 2017, Vol.28(16), pp.11950-11960 [Peer Reviewed Journal]
Bulk single crystals of zinc telluride up to 10 mm thick have been grown by the Multi-Tube Physical Vapour Transport technique and doped, in-situ during growth, with oxygen. Following hetero-epitaxial nucleation and buffer growth on 100 mm diameter G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d82fd3d354908f249607e0a8dc65a55b
http://rdcu.be/unSg
http://rdcu.be/unSg
Publikováno v:
Chemistry of Materials. 26:1770-1778
A novel structure, δ-doped NaYF4:Yb,Er, has been proposed for significantly enhancing the fluorescence efficiency of up-conversion phosphors. Theoretical calculations indicate that these new δ-doped NaYF4:Yb,Er structures will suppress the Yb3+-def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae94937e4b4a7494a780ce6709496ecc
https://doi.org/10.1021/cm4023425
https://doi.org/10.1021/cm4023425
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:1222-1230
The application of transformation optical techniques to photonic crystal-like dielectric structures has facilitated the creation of invisibility cloaks that operate at optical wavelengths. In this article, the authors present the fabrication processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c6a06df12bccb5aff8317b5bcd4e42
https://doi.org/10.1116/1.3504595
https://doi.org/10.1116/1.3504595
Autor:
Adriana Valencia, C. J. Summers, Shen-Jie Wang, Jeff Nause, Matthew H. Kane, Eun-Hyun Park, Zhe Chuan Feng, Nola Li, Ian T. Ferguson
Publikováno v:
physica status solidi c. 5:1736-1739
The metalorganic chemical vapor deposition (MOCVD) growth of GaN based materials on ZnO substrates has numerous technical issues that need to be investigated and resolved. These include the thermal stability of ZnO, out-diffusion of Zn/O from the ZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0de09ef5e74b7606235cf6ccb180d2b9
https://doi.org/10.1002/pssc.200778614
https://doi.org/10.1002/pssc.200778614
Autor:
Qing Song, Jeff Nause, Z. J. Zhang, David J. Keeble, William E. Fenwick, Ian T. Ferguson, C. J. Summers, Bill Nemeth, Graham Smith, Matthew H. Kane, R. Varatharajan, Martin Strassburg, Hassane El-Mkami
Publikováno v:
physica status solidi (b). 244:1462-1467
Considerable effort has been devoted to the study of transition metal doped zinc oxide following various theoretical predictions of room temperature ferromagnetism in these materials. Near equilibrium growth techniques may be suitable for the product
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b915db5e30e60402748a7a119e7f85fa
https://doi.org/10.1002/pssb.200675105
https://doi.org/10.1002/pssb.200675105
Autor:
Ian T. Ferguson, Ming Pan, Martin Strassburg, C. J. Summers, Ali Asghar, David Nicol, Hun Kang, Shalini Gupta
Publikováno v:
physica status solidi c. 3:2223-2226
Solid state lighting has done well recently in niche markets such as signage and displays, however, no available SSL technologies incorporate all the necessary attributes for general illumination. Development of a novel solid state general illuminati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de953b92128cb2b36df5a2e84f4816d
https://doi.org/10.1002/pssc.200565435
https://doi.org/10.1002/pssc.200565435
Autor:
Qing Song, Ali Asghar, Mustafa Alevli, Jayantha Senawiratne, Nikolaus Dietz, Z. J. Zhang, Martin Strassburg, C. J. Summers, Matthew H. Kane, Ian T. Ferguson
Publikováno v:
Journal of Physics: Condensed Matter. 18:2615-2622
The suppression of the ferromagnetic behaviour of metal–organic chemical vapour deposition grown Ga1−x Mnx Ne pilayers by silicon co-doping, and the influence of the Fermi level position on and its correlation with the magnetic and optical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91bb5654a50002453f04078b64189c9c
https://doi.org/10.1088/0953-8984/18/9/001
https://doi.org/10.1088/0953-8984/18/9/001
Autor:
Ian T. Ferguson, C. R. Vestal, J. Senawirante, Ali Asghar, Martin Strassburg, Matthew H. Kane, Nikolaus Dietz, C. J. Summers, Z. J. Zhang, Adam M. Payne
Publikováno v:
physica status solidi (c). 2:2441-2445
The ferromagnetic semiconductor GaMnN has been produced by two methods – ion implantation and metalorganic chemical vapor deposition (MOCVD). P-type, n-type, and intrinsic GaN layers grown by MOCVD were ion-implanted with 3 × 1016/cm2 Mn+ at 200 k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ffba1ecdeefed69232af28a8d0d0ca
https://doi.org/10.1002/pssc.200461482
https://doi.org/10.1002/pssc.200461482
Autor:
Nikolaus Dietz, Matthew H. Kane, Ali Asghar, Ian T. Ferguson, C. J. Summers, Jayantha Senawiratne, Z. J. Zhang, C. R. Vestal, Martin Strassburg
Publikováno v:
Semiconductor Science and Technology. 20:L5-L9
Epitaxial layers of Ga1−xMnxN with concentrations of up to x = 0.015 have been grown on c-sapphire substrates by metalorganic chemical vapour deposition. No ferromagnetic second phases were detected via high-resolution x-ray diffraction. Crystallin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ef8145df022227706d4e758ae490cf
https://doi.org/10.1088/0268-1242/20/3/l02
https://doi.org/10.1088/0268-1242/20/3/l02
Publikováno v:
Journal of Applied Physics. 85:3999-4002
Systematic studies of the postgrowth annealing of molecular beam epitaxial deposited SrS:Cu films are reported. In the as-grown SrS:Cu films, the grain size was small and the luminescence very weak. A step-annealing procedure in a H2S atmosphere was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dde12c8e065d73e87b002c3f3b6659b
https://doi.org/10.1063/1.370303
https://doi.org/10.1063/1.370303