Zobrazeno 1 - 10
of 143
pro vyhledávání: '"C. J. Pinzone"'
Monolithic integration of mid-infrared quantum cascade lasers coupled with passive InGaAs waveguides
Autor:
C. J. Pinzone, Daniele Palaferri, Y.L. Okuno, Feng Xie, Seungyong Jung, Mikhail A. Belkin, Jiaming Xu, Kevin Lascola
Publikováno v:
Conference on Lasers and Electro-Optics.
We experimentally demonstrate lasing and mode coupling of mid-infrared quantum cascade lasers monolithically integrated with passive InGaAs waveguides for integrated-photonics applications. A waveguide-coupled device produced 30 mW peak power with J
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e551aa6b8a8b6a1e3007e0a17b5ee196
https://doi.org/10.1364/cleo_si.2018.sf2g.5
https://doi.org/10.1364/cleo_si.2018.sf2g.5
Autor:
Kevin Lascola, Mikhail A. Belkin, C. J. Pinzone, Kevin Zhang, Daniele Palaferri, Y.L. Okuno, Seungyong Jung, Feng Xie
Publikováno v:
Optica. 6:1023
Mid-infrared (mid-IR, λ≈3–12 μm) photonic integrated circuits on low-loss passive waveguide platforms are of significant interest for a wide range of mid-IR applications. Quantum cascade lasers (QCLs) are currently the only room-temperature ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24037c6a44c1897cba19152774746771
https://doi.org/10.1364/optica.6.001023
https://doi.org/10.1364/optica.6.001023
Publikováno v:
Journal of Applied Physics. 73:3153-3157
Five‐micron long AlGaAs/GaAs Fabry–Perot vertical cavities with thin GaAs active regions of two different thicknesses are analyzed both theoretically and experimentally in terms of their optical transmission characteristics, spontaneous radiation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83555f69e1659a9bbc9739288f65208e
https://doi.org/10.1063/1.352984
https://doi.org/10.1063/1.352984
Publikováno v:
Journal of Applied Physics. 73:2700-2704
It has recently been demonstrated that somewhat anomalous spectral characteristics are achieved in the emission from localized dipoles contained in Fabry–Perot cavities. More extensive data are presented demonstrating the spectral characteristics o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::601fd3122712faeea22fa5d65e6e8a09
https://doi.org/10.1063/1.353041
https://doi.org/10.1063/1.353041
Publikováno v:
Journal of Crystal Growth. 124:558-564
We report here the low-pressure metalorganic chemical vapor deposition growth of AlGaAs-GaAs quantum well heterostructures having low-temperature (4.2 K) photoluminescence spectra with full width at half-maximum (FWHM) values ranging from ≌6 to 4 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c5a7c2765c34bc92e9746c01380cd6
https://doi.org/10.1016/0022-0248(92)90517-m
https://doi.org/10.1016/0022-0248(92)90517-m
Autor:
S. Singh, C. J. Pinzone, C. A. Green, J. P. van der Ziel, Russell D. Dupuis, N. D. Gerrard, George J. Zydzik, Dennis G. Deppe
Publikováno v:
Journal of Crystal Growth. 107:790-795
The vertical cavity surface emitting laser is of growing interest because of unique advantages offered by the device geometry, including the potential for the integration of this laser structure with other devices for OEICs. Additional advantages inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21551ff93f1f52975e8cb02256ed8905
https://doi.org/10.1016/0022-0248(91)90559-n
https://doi.org/10.1016/0022-0248(91)90559-n
Autor:
D. V. Lang, Barry Franklin Levine, C. A. King, C. J. Pinzone, S. Hui, M. Geva, H. W. Krautter, D. R. Zolnowski, R.E. Leibenguth
Publikováno v:
Applied Physics Letters. 75:2141-2143
A method of wafer bonding is demonstrated which significantly reduces the thermal expansion mismatch stress, by removing the substrate before the high temperature anneal, thereby allowing elastic accommodation of the thin device layers. Record low-da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5d849be186a7cd4a916323bd1c2d7af
https://doi.org/10.1063/1.124943
https://doi.org/10.1063/1.124943
Publikováno v:
Journal of Applied Physics. 67:6823-6829
Heavily doped n‐type InP and InGaAs epitaxial layers have been grown by metalorganic chemical vapor deposition at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn‐doped InP and InGaAs layers have been grown with doping conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bec4dab82079caaa88cfc6ca4757ee98
https://doi.org/10.1063/1.345072
https://doi.org/10.1063/1.345072
Publikováno v:
Applied Physics Letters. 67:700-702
The diffusion characteristics and incorporation characteristics of Zn dopants in OMVPE‐grown InP are studied. The Zn diffusion constant depends strongly on concentration and increases by four orders of magnitude in the Zn concentration range 2×101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f1fe9d712f4ce13a01bdb0e8fdd66ea
https://doi.org/10.1063/1.115279
https://doi.org/10.1063/1.115279
Publikováno v:
Applied Physics A Materials Science & Processing. 60:525-527
Zn-doped InP and GaInPAs layers were grown by OrganoMetallic Vapor-Phase Epitaxy (OMVPE). The epitaxial films consist of a primary GaInPAs/InP epitaxial layer and a secondary InP/GaInAs epitaxial layer. We present evidence that the redistribution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c02625d66b69f91dd3a9d22fb75e53
https://doi.org/10.1007/bf01538523
https://doi.org/10.1007/bf01538523