Zobrazeno 1 - 10
of 38
pro vyhledávání: '"C. J. Palmstro"'
Autor:
M. Kjaergaard, F. Nichele, H. J. Suominen, M. P. Nowak, M. Wimmer, A. R. Akhmerov, J. A. Folk, K. Flensberg, J. Shabani, C. J. Palmstrøm, C. M. Marcus
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
Interface transparency between 2D semiconductors and superconductors is a longstanding problem, seriously hindering potential applications. Here, using a new hybrid system, Kjaergaard et al. report quantized conductance doubling and a hard supercondu
Externí odkaz:
https://doaj.org/article/f37cdf2c16514545865b1bd5ffdc9846
Autor:
J. A. Logan, S. J. Patel, S. D. Harrington, C. M. Polley, B. D. Schultz, T. Balasubramanian, A. Janotti, A. Mikkelsen, C. J. Palmstrøm
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Half-Heusler compounds are predicted to bear topological properties, which is yet to be experimentally evidenced. Here, Logan et al.report experimental evidence of a topological surface state in epitaxially grown thin films of the half-Heusler compou
Externí odkaz:
https://doaj.org/article/bf44c2a1539040f3833572bf8477a640
Publikováno v:
Journal of Applied Physics. 81:2720-2724
We report on the investigation of a low resistance Pd/Zn/Pd contact to p-InGaAsP (λ=1.14 μm). The contact had a minimum contact resistivity of ∼3×10−7 Ω cm2 to the substrate doped to 2×1018 cm−3. The samples showed rather uniform surface a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee573976832045ab61a11b91ddea341
https://doi.org/10.1063/1.363974
https://doi.org/10.1063/1.363974
Autor:
Douglas A. Bennett, Liang Chen, Michael J. Pechan, Robert L. Compton, S. James Allen, C. J. Palmstro
Publikováno v:
Journal of Applied Physics. 89:7514-7516
Epitaxial Fe0.5Co0.5(100) films have been grown via MBE on GaAs (100) at reduced temperatures in order to minimize interfacial reactions. In-plane magnetization measurements reveal an overall twofold anisotropy superimposed with a fourfold component.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926fab6a567c8424908a676b35f8553b
https://doi.org/10.1063/1.1354592
https://doi.org/10.1063/1.1354592
Autor:
R. Martin, H. L. Gilchrist, T. L. Cheeks, B. J. Wilkens, J. G. Zhu, C. B. Carter, C. J. Palmstro
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1946-1953
The use of thermodynamically stable epitaxial metal/GaAs contacts fabricated by molecular‐beam epitaxy has enabled detailed studies of Schottky barrier formation on well characterized and controlled structures. The effects of lattice mismatch, anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9c75cfe356fc300dac080891c81a95
https://doi.org/10.1116/1.578120
https://doi.org/10.1116/1.578120
Publikováno v:
Journal of Applied Physics. 70:4890-4893
Epitaxial thin films of ErAs were grown by molecular beam epitaxy on (100) GaAs. The lattice mismatch induced strain and subsequent lattice relaxation were studied using Rutherford backscattering spectrometry and ion channeling. The channeling result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2baa3b4ec6b42867f10f1360ee62cfae
https://doi.org/10.1063/1.349032
https://doi.org/10.1063/1.349032
Autor:
Michael A. Tischler, S. S. Lau, X. Z. Wang, R. M. Potemski, J. P. Harbison, C. J. Palmstro, L. T. Florez, L. C. Wang, Thomas F. Kuech, E. D. Marshall, Charles C. Han, S. A. Schwarz
Publikováno v:
Journal of Applied Physics. 68:5714-5718
A low‐resistance and nonspiking contact consisting of a layered structure of Si/Ni(Mg) on p‐GaAs is formed by solid‐phase regrowth. Backside secondary‐ion mass spectrometry and cross‐sectional transmission electron microscopy show an initia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d983442790e46cfc7ffc427cb9e88f
https://doi.org/10.1063/1.346990
https://doi.org/10.1063/1.346990
Autor:
Charles C. Han, S. A. Schwarz, C. J. Palmstro, J. W. Mayer, L. H. Allen, Timothy D. Sands, S. S. Lau, C. L. Schwartz, J. P. Harbison, L. T. Florez, E. D. Marshall, L. G. Shantharama
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2079-2083
A backside secondary ion mass spectrometry (SIMS) technique is employed to examine seven distinctive metallic contacts on GaAs at various stages of formation. The contacts are formed on multilayered GaAs/AlGaAs structures grown by molecular beam epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e34634425ff9bb3d6a1c8eed469164
https://doi.org/10.1116/1.577006
https://doi.org/10.1116/1.577006
Autor:
C. J. Palmstro, Eli Yablonovitch, C. L. Schwartz, E. D. Marshall, T. J. Gmitter, S. A. Schwarz, J. P. Harbison, S. S. Lau, L. T. Florez
Publikováno v:
Journal of Applied Physics. 67:334-339
A backside secondary ion mass spectrometry technique is employed to examine elemental redistribution in the Ge/Pd/GaAs ohmic contact as a function of annealing conditions. Dilute Al containing marker layers (Ga1−x Alx As) in the GaAs permit precise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::121021227bf7738e2f2895824b06724c
https://doi.org/10.1063/1.345258
https://doi.org/10.1063/1.345258
Publikováno v:
Applied Physics Letters. 70:99-101
A low resistance Pd/Sb/Zn/Pd Ohmic contact based on the solid phase regrowth principle has been investigated to p-InP. Contact resistivity as low as ∼2×10−6 Ω cm2 has been obtained for samples annealed at 500 °C for 1 min. The Ohmic behavior c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1571e2003ebb87b0c34957ceddbb00ad
https://doi.org/10.1063/1.119320
https://doi.org/10.1063/1.119320