Výsledky vyhledávání - "C. J. Hitzman"

Multi-Technique Characterization of WSix films

Autor: C. J. Hitzman, I. C. Ivanov, P. M. Lindley, S. M. Baumann, A. Y. Craig

Publikováno v: MRS Proceedings. 337

WSix films are used extensively for contact, interconnect, and, in some cases, diffusion and Schottky barriers in semiconductor devices1. The electrical and barrier properties of these films are affected by a variety of factors, such as film stoichio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dbc9aecdee0239417fa18046879d2397
https://doi.org/10.1557/proc-337-675

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SiO[sub 2] thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

Autor: R. L. Moore, R. J. Bleiler, E. Principe, F. K. Huang, Steven W. Novak, S.P. Smith, Kevin S. Jones, M. J. Edgell, C. J. Hitzman, Jeffrey Shallenberger, W. Nieveen, S. Biswas, D. A. Cole, J. F. Kirchhoff

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:440

As the Rp of ion implants steadily decreases an ever-increasing percentage of the implant species lies in the oxide layer and is, therefore, not electrically active. For this reason, it is important to have analytical techniques capable of accurately

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::596df62b82a6c1df36d94eaf17ca720a
https://doi.org/10.1116/1.591208

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Surface quantification by ion implantation through a removable layer

Autor: C. N. Granger, C. J. Hitzman, Fred A. Stevie, R. Santiesteban, J. M. McKinley, R. F. Roberts, M. A. Decker

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:483

Quantification at the surface or in the near-surface region has been difficult to achieve for analytical techniques such as secondary ion mass spectrometry (SIMS) and total reflection x-ray fluorescence (TXRF). Ion implantation through a removable la

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71dece7fc3c6ac875b86da9c5610afb9
https://doi.org/10.1116/1.591216

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Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation

Autor: C. G. Hopkins, Paul K. Chu, Robert G. Wilson, C. J. Hitzman, D. M. Jamba

Publikováno v: Journal of Applied Physics. 60:2806-2809

Acceptor depth distributions measured using differential capitance‐voltage profiling, and atom depth distributions measured using secondary ion mass spectrometry are reported for aluminum implanted in the random and the 〈100〉, 〈110〉, and �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1ab46d9bc7c53b2545228e61954a9f5
https://doi.org/10.1063/1.337061

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Magnetic properties of RAlGa compounds

Autor: C. J. Hitzman, L. R. Sill

Publikováno v: Journal of Applied Physics. 53:2448-2450

The magnetic moments of the series of intermetallic compounds RAlGa (where R is Nd, Sm, Gd, Tb, Dy, Ho, Er, or Tm) have been measured at temperatures from 4.2 to 300 K in applied fields up to 26 kOe. These compounds form in a trigonal crystal structu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4081ef326f6eff66fbe7c256a1cd93c2
https://doi.org/10.1063/1.330878

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Magnetic properties of some RAuGa intermetallic compounds

Autor: L. R. Sill, C. J. Hitzman

Publikováno v: Journal of Applied Physics. 52:2061-2063

The magnetic moments of the series of intermetallic compounds RAuGa, where R is Sm or one of the heavy rare earth elements, has been measured at temperatures from 2.5 °K to 300 °K in applied fields up to 26kOe. These compounds form in an orthorhomb

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::76a5f39564df28c4c5910fc6d58d99df
https://doi.org/10.1063/1.329615

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Oxide thickness determination by XPS, AES, SIMS, RBS and TEM

Autor: Kevin S. Jones, M. J. Edgell, R. J. Bleiler, Jeffrey Shallenberger, C. J. Hitzman, R. L. Moore, W. Nieveen, D. A. Cole, S. Biswas, E. Principe, J. F. Kirchhoff, Steven W. Novak, S.P. Smith

Publikováno v: Scopus-Elsevier

As the R/sub p/ of ion implants steadily decreases, an ever-increasing percentage of the implant species lies in the oxide layer and is, therefore, not electrically active. For this reason it is important to have analytical techniques capable of accu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daac10ac7cd2107993f89bca8a4c895b
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033339344&partnerID=MN8TOARS

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Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy

Autor: T. Y. Chang, E. Silberg, C. J. Hitzman, C. A. Evans, E. A. Caridi

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 1:178

The redistribution of Mn in MBE grown In0.53Ga0.47 As layers containing different combinations of Mn and Ge doping pulses and subjected to various annealing conditions has been studied by secondary ion mass spectrometry (SIMS). The results indicate t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88b622bab6b05a28f7b1a4be766b8418
https://doi.org/10.1116/1.582528

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