Zobrazeno 1 - 10
of 10
pro vyhledávání: '"C. J. Hepburn"'
Publikováno v:
physica status solidi (a). 204:531-535
In this paper we report on numerical modelling and optimisation of a novel heterojunction optical light emitter based on longitudinal transport of the electrons and holes. The real-space-transfer of the carriers into the quantum well takes place due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ed41a5668ffc27aad330e94cc125cf
https://doi.org/10.1002/pssa.200673350
https://doi.org/10.1002/pssa.200673350
Publikováno v:
physica status solidi (c). 2:3096-3099
We present a novel Vertical-Cavity Semiconductor Optical Amplifier (VCSOA) based on GaInNAs for 1.3 µm operation and GaAs for 0.85 µm operation using longitudinal transport of carriers along the p and n layers of the junction containing the quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd7da3d512e671addd4fc10f9d67a5f
https://doi.org/10.1002/pssc.200460732
https://doi.org/10.1002/pssc.200460732
Autor:
Richard J. Potter, T.B. Joyce, Naci Balkan, A. Boland-Thoms, Ayse Erol, Paul R. Chalker, Tim J. Bullough, C. J. Hepburn, S. Mazzucato, Anthony J. Vickers
Publikováno v:
IEE Proceedings - Optoelectronics. 151:284-289
An investigation is presented of thermal annealing effects on spectral photoconductivity and photoluminescence in sequentially grown GaInNAs/GaAs and GaInAs/GaAs quantum well structures. Experiments have been carried out at temperatures between 30 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8475a87146d7c2cb5d3b919b4fedfa41
https://doi.org/10.1049/ip-opt:20040935
https://doi.org/10.1049/ip-opt:20040935
Autor:
Geoff Hill, Steve Pinches, C.C. Button, Richard J. Potter, A. Dyson, C. J. Hepburn, Adrian Boland-Thoms, Russell Sceats, Naci Balkan
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 17:607-609
A novel type of GaInAsP/InP surface emitting device is investigated in this work, consisting of an InP p–n junction with a GaInAsP quantum well placed on the n-side of the junction within the depletion region. The device is grown between a bottom G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e391012375a7067b89be0c92468ff631
https://doi.org/10.1016/s1386-9477(02)00884-6
https://doi.org/10.1016/s1386-9477(02)00884-6
International Conference on Superlattices, Nano-Structures and Nano-Devices -- JUL 30-AUG 04, 2006 -- Istanbul, TURKEY
WOS: 000245877200131
The work presented here is concerned with studies of the operational characteristics of single-quant
WOS: 000245877200131
The work presented here is concerned with studies of the operational characteristics of single-quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98b13bb99be38f03b8a4eb4ee6fe125c
https://aperta.ulakbim.gov.tr/record/40201
https://aperta.ulakbim.gov.tr/record/40201
Autor:
Michael Andreja Fisher, J. Reed, Adrian Boland-Thoms, S.D. Perrin, M. J. Harlow, C. J. Hepburn, A. J. Dann, P. Cannard, Ian Read, Russell Sceats, D. J. Elton, Naci Balkan
Publikováno v:
SPIE Proceedings.
We present the results of our studies concerning the pulsed operation of a bulk GaInAsP/InP vertical cavity surface emitting laser (VCSEL). The device is tailored to emit at around 1.5 micrometers at room temperature. The structure has a 45-period n-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd9cc009d2b23938b1ca78c34a5a8cb3
https://doi.org/10.1117/12.432618
https://doi.org/10.1117/12.432618
Publikováno v:
SPIE Proceedings.
Hot electron light emitting and lasing semiconductor heterostructure (HELLISH) is a novel longitudinal transport, surface emitting device. The operation of the device as a light emitter and vertical cavity surface emitting laser (VCSEL) has been prev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b87f8cc728ef7858f90d4df1582b6ec
https://doi.org/10.1117/12.432628
https://doi.org/10.1117/12.432628
Autor:
C. J. Hepburn, Michael J. Adams, Richard J. Potter, Ali Serpengüzel, Angela O'Brien-Davies, Naci Balkan, J.S. Roberts, Ismail Sokmen
The hot electron light emitting and lasing semiconductor heterostructure vertical cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the layers of the GaxAl1-xAs p-n junction. The junction contains a Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::966f62520ab9a69acdc41d87e9622914
https://avesis.deu.edu.tr/publication/details/2cc5da75-cae3-4518-b4d3-792efffbc13a/oai
https://avesis.deu.edu.tr/publication/details/2cc5da75-cae3-4518-b4d3-792efffbc13a/oai
Autor:
C. J. Hepburn, Angela O'Brien-Davies, Richard J. Potter, Naci Balkan, Adrian Boland-Thoms, J.S. Roberts, Michael J. Adams, Ismail Sokmen
Publikováno v:
Scopus-Elsevier
The Hot Electron Light Emitting and Lasing Semiconductor Heterostructure (HELLISH) vertical cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the layers of Ga x Al 1-x As p - n junction. The fabricatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da70d12f18614457eb7b2592b2c45c86
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032672816&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032672816&partnerID=MN8TOARS
Autor:
S. Mazzucato, T.B. Joyce, Mhairi Gass, Paul R. Chalker, S. Thomas, C. J. Hepburn, Naci Balkan, Tim J. Bullough, Adam J. Papworth
Publikováno v:
Paul Chalker
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
ResearcherID
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af1428e26783b2790211d84cdad3c98c
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000222976100052&KeyUID=WOS:000222976100052
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000222976100052&KeyUID=WOS:000222976100052