Zobrazeno 1 - 10
of 29
pro vyhledávání: '"C. J. Gibbings"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1b882b6ac89dcc2e24fcba2cb6d34b
https://doi.org/10.1201/9781003069621-96
https://doi.org/10.1201/9781003069621-96
Publikováno v:
Semiconductor Science and Technology. 9:1198-1203
An investigation of strained quantum well 0.98 mu m lasers with one, two and three Ga0.80In0.20As wells and Ga0.50In0.50P cladding layers has been carried out. The threshold current density of broad-area lasers exhibited a saturation effect with incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaa449e2963d7aea862c2b2f914d4f9d
https://doi.org/10.1088/0268-1242/9/6/006
https://doi.org/10.1088/0268-1242/9/6/006
Publikováno v:
Philosophical Magazine Letters. 67:59-65
We have found that a misfit dislocation which moves within a slightly strained layer of Ga0·5ln0·5P with atomic ordering on {1T1} planes leaves an observable track in the form of an antiphase domain boundary. Here we describe our observations and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ad8fcab0eccc9f187d2ba227c8960e
https://doi.org/10.1080/09500839308240491
https://doi.org/10.1080/09500839308240491
Publikováno v:
Semiconductor Science and Technology. 6:18-26
Si/Ge short period superlattices containing four monolayers of Si and four monolayers of Ge have been grown on Si(100) substrates by molecular beam epitaxy. The superlattices have been investigated structurally by secondary ion mass spectroscopy (SIM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b1acb09d482c6ed886b88cb56f9dc8e
https://doi.org/10.1088/0268-1242/6/1/004
https://doi.org/10.1088/0268-1242/6/1/004
Publikováno v:
Materials Science Forum. :379-384
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917c962a54557c18113c827dfc302809
https://doi.org/10.4028/www.scientific.net/msf.38-41.379
https://doi.org/10.4028/www.scientific.net/msf.38-41.379
Publikováno v:
Semiconductor Science and Technology. 5:1168-1173
The authors demonstrate two applications of Raman scattering for the characterization of low-dimensional structures: they measure the plasmon properties of a modulation-doped multiple quantum well with multiple subband occupation by Raman scattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ec7c0a3edd54436e4cbcf575bd2b83d
https://doi.org/10.1088/0268-1242/5/12/004
https://doi.org/10.1088/0268-1242/5/12/004
Publikováno v:
Physical Review B. 42:7033-7041
We present the results of full three-dimensional calculations of phonon frequencies in silicon-germanium strained-layer superlattices (SLS's) and compare with experimental data. We use a modified version of the six-parameter valence-force-potential m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7af6f034d3b05194f390c189d5e7cba9
https://doi.org/10.1103/physrevb.42.7033
https://doi.org/10.1103/physrevb.42.7033
Autor:
C. J. Gibbings, C. G. Tuppen
Publikováno v:
Journal of Electronic Materials. 19:1101-1106
A general expression for the glide velocity of misfit dislocations in Si1-xGex layers on Si substrates as a function of composition, thickness and temperature is presented. The relaxation of Si/Si1-xGex/Si buried layer structures, which can proceed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9a707712841dd9678fe5ddeede3a85
https://doi.org/10.1007/bf02651988
https://doi.org/10.1007/bf02651988
Autor:
C. J. Gibbings, C. G. Tuppen
Publikováno v:
Journal of Applied Physics. 68:1526-1534
Misfit dislocation glide velocities have been measured in Si1−xGex/Si heterostructures. Dislocations were deliberately introduced at sites of crystalline damage, the samples were then annealed, and dislocation propagation distances measured using d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b90257782e9708eac63be09b7020fd1d
https://doi.org/10.1063/1.346628
https://doi.org/10.1063/1.346628
Publikováno v:
Semiconductor Science and Technology. 5:442-445
The potential of an electrochemical cell has been found to vary periodically as Si/Si1-xGex superlattices are anodically etched at constant current. A simple anodic etching system has been used to characterise a range of structures, and both 5.6 AA g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::849a53476f5c0268e5cbde2de4e147f3
https://doi.org/10.1088/0268-1242/5/5/012
https://doi.org/10.1088/0268-1242/5/5/012