Zobrazeno 1 - 10
of 14
pro vyhledávání: '"C. J. Deatcher"'
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ceac405b4c1ceb443386c911371fcd8
https://doi.org/10.1201/9781351074636-149
https://doi.org/10.1201/9781351074636-149
Autor:
H. Kheyrandish, S. Rushworth, L. M. Smith, Ian Watson, C. J. Deatcher, S. Romani, M.G. Cheong, Robert W. Martin, C. Liu, K. Bejtka
Publikováno v:
Semiconductor Science and Technology. 21:1287-1295
Magnesium doping is critically important in GaN device technology, since it provides the only viable method of producing layers with p-type conductivity. Electron probe microanalysis with wavelength dispersive x-ray spectrometry (WDX-EPMA) was used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4974d6a0283a1c2641a7ffb757779cf4
https://doi.org/10.1088/0268-1242/21/9/013
https://doi.org/10.1088/0268-1242/21/9/013
Autor:
E. V. Yakovlev, C. J. Deatcher, Nianhua Peng, Roman Talalaev, Chris Jeynes, Robert W. Martin, Ian Watson
Publikováno v:
physica status solidi c. 3:1620-1623
A combined modeling and experimental analysis of InGaN deposition in the widely used single-wafer Aixtron AIX 200/4 RF-S reactor is presented. The main focus of the study is the effect of the deposition temperature on the layer composition. InGaN epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea291fc646f384891d823c4f2ca8b28f
https://doi.org/10.1002/pssc.200565182
https://doi.org/10.1002/pssc.200565182
Publikováno v:
Chemical Vapor Deposition. 10:187-190
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38271f91c2d5101ebdc1c820a7ffd02
https://doi.org/10.1002/cvde.200304171
https://doi.org/10.1002/cvde.200304171
Autor:
N.P. Barradas, Andrei L. Kholkin, Eduardo Alves, E. Pereira, Sérgio Pereira, C. J. Deatcher, K.P. O'Donnell, Ian Watson, C. Liu, M. Mayer, Vladimir V. Shvartsman
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 217:479-497
The roughness in GaN/InGaN thin films and multilayers was studied with Rutherford backscattering (RBS). Quantitative data analysis, including the determination of the roughness parameters, was made through the application of models developed for spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::740388394cd3f1e6ed19d344effb6cb1
https://doi.org/10.1016/j.nimb.2003.11.009
https://doi.org/10.1016/j.nimb.2003.11.009
Autor:
Yue Jun Sun, Oliver Brandt, Ian Watson, A G Cullis, M Lada, Sérgio Pereira, C. J. Deatcher, C. Liu
Publikováno v:
Semiconductor Science and Technology. 18:212-218
Reflectometry using a white light source has been applied to in situ monitoring of metal organic vapour phase epitaxy of InGaN alloy structures on GaN buffer layers. Both InGaN epilayers 60-350 nm in thickness and InGaN/GaN multi-quantum-well (MQW) s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1cb6391fe71e22aaafa8fd1d19ba9d0
https://doi.org/10.1088/0268-1242/18/4/304
https://doi.org/10.1088/0268-1242/18/4/304
Autor:
Ian Watson, C. J. Deatcher, Robert W. Martin, C. Liu, K.P. O'Donnell, Paul R. Edwards, R Pecharromán-Gallego
Publikováno v:
Journal of Physics D: Applied Physics. 35:604-608
In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green, amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78afb7aa9e6bc8f18a249341acebdf48
https://doi.org/10.1088/0022-3727/35/7/306
https://doi.org/10.1088/0022-3727/35/7/306
Autor:
H.S. Kim, Ian Watson, Martin D. Dawson, Paul R. Edwards, Robert W. Martin, John M. Girkin, C. J. Deatcher, K.S. Kim, Carol Trager-Cowan, C. Liu
Publikováno v:
physica status solidi (a). 188:743-746
Metal organic chemical vapour deposition was used for lateral epitaxial overgrowth of GaN on stripe-patterned SiO2 masks 200 and 500 nm in thickness. Overgrowths were conducted under constant conditions, at a nominal temperature of 1140 degreesC. Mec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a1d87e6f9a983b710a16303ddf3d63
https://doi.org/10.1002/1521-396x(200112)188:2<743::aid-pssa743>3.0.co
https://doi.org/10.1002/1521-396x(200112)188:2<743::aid-pssa743>3.0.co
Autor:
Benjamin Damilano, C. J. Deatcher, Nicolas Grandjean, K.P. O'Donnell, M.E. White, Robert W. Martin, Jean Massies
Publikováno v:
physica status solidi (b). 228:129-132
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18ba674a7709318c614e9e0906eba65f
https://doi.org/10.1002/1521-3951(200111)228:1<129::aid-pssb129>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:1<129::aid-pssb129>3.0.co
Autor:
N.P. Barradas, E. Pereira, C. J. Deatcher, C. Liu, Eduardo Alves, Ian Watson, Sérgio Pereira, K.P. O'Donnell
Publikováno v:
Applied Physics Letters. 81:2950-2952
We report a detailed compositional analysis of InxGa1−xN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. Depth profiles of the InN fraction, x, in the MQWs were determined from grazing incidence Rutherford backsca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acbc2f1c4c9116f58daa783ae46cde96
https://doi.org/10.1063/1.1513661
https://doi.org/10.1063/1.1513661