Zobrazeno 1 - 10
of 53
pro vyhledávání: '"C. J. D. Hetherington"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c609c816f2a05c61dca977c0f67bdf
https://doi.org/10.1201/9781003069621-103
https://doi.org/10.1201/9781003069621-103
Autor:
L. M. Sorokin, Jeremy Sloan, John L. Hutchison, N S Savkina, G. N. Mosina, C. J. D. Hetherington, A A Lebedev
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6867a1ca804d8500ae2d0c4ef9a91a
https://doi.org/10.1201/9781351074636-17
https://doi.org/10.1201/9781351074636-17
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Microscopy of Semiconducting Materials 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6afa16d53069591a7d50e32277e8818
https://doi.org/10.1201/9781351074636-35
https://doi.org/10.1201/9781351074636-35
Autor:
Joseph Yahalom, T. Cohen-Hyams, John L. Hutchison, Jürgen M. Plitzko, Wayne D. Kaplan, C. J. D. Hetherington
The relationship between the microstructure and the magnetic properties of heterogeneous Cu-Co [Cu92.5-Co7.5] (at.%) thin films prepared by electrodeposition was studied. Electron spectroscopic imaging (ESI) studies clearly revealed the evolution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8706959e3f5cb8e5204184ec800c7d2
https://ora.ox.ac.uk/objects/uuid:f10019ce-77fd-4589-a888-a7b03a2a7538
https://ora.ox.ac.uk/objects/uuid:f10019ce-77fd-4589-a888-a7b03a2a7538
Autor:
Fumio Hosokawa, John L. Hutchison, Ron C. Doole, Takeshi Tomita, David J. H. Cockayne, Mikio Naruse, Nobuo Tanaka, C. J. D. Hetherington, Hidetaka Sawada, Toshikazu Honda, Peter Hartel, Toshikatsu Kaneyama, J.M. Titchmarsh, Max Haider, Angus I. Kirkland
Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e558de5ebc3ce8d4124fe81e7bf16ae8
https://ora.ox.ac.uk/objects/uuid:61007381-13aa-4da2-9c41-8cc5f3b44189
https://ora.ox.ac.uk/objects/uuid:61007381-13aa-4da2-9c41-8cc5f3b44189
Autor:
Michael A. O'Keefe, Andreas Thust, C. J. D. Hetherington, R. Kilaas, Yang Wang, Christian Kisielowski
It is reported that lattice imaging with a 300 kV field emission microscope in combination with numerical reconstruction procedures can be used to reach an interpretable resolution of about 80 pm for the first time. A retrieval of the electron exit w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a66f99735f7b2834423b2f4cf1030655
https://ora.ox.ac.uk/objects/uuid:24edc6d0-33e3-4b97-8775-5087f165e40e
https://ora.ox.ac.uk/objects/uuid:24edc6d0-33e3-4b97-8775-5087f165e40e
Autor:
D. S. Misra, Susanta Sinha Roy, Navneet Soin, Kiran Shankar Hazra, C. J. D. Hetherington, Soumyendu Roy, James McLaughlin, Teck H. Lim
Publikováno v:
The Journal of Physical Chemistry C. 115:5366-5372
Vertically aligned few-layered graphene (FLG) nanoflakes were synthesized on bare silicon (Si) substrates by a microwave plasma enhanced chemical vapor deposition method. In situ nitrogen (N(2)) plasma treatment was carried out using electron cyclotr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a04a10cc0a5456512200964ee5bb63ac
https://doi.org/10.1021/jp110476m
https://doi.org/10.1021/jp110476m
Autor:
Christopher O'Kane, Teck H. Lim, Navneet Soin, Susanta Sinha Roy, C. J. D. Hetherington, James McLaughlin
Publikováno v:
CrystEngComm. 13:312-318
A systematic study is reported of the growth of vertically aligned few layered graphene (FLG) nanoflakes on Si (100) substrates by microwave plasma enhanced chemical vapour deposition (MPECVD) method. Asymmetric grazing incident angle X-ray diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c718ad58630d7536f5e8600a31a6c130
https://doi.org/10.1039/c0ce00285b
https://doi.org/10.1039/c0ce00285b
Autor:
A. Giannattasio, Peter D. Nellist, John D. Murphy, Zhongwen Yao, C. J. D. Hetherington, Steve G. Roberts
Publikováno v:
Journal of Nuclear Materials. :583-586
The mechanical properties of polycrystalline tungsten grown by chemical vapour deposition (CVD) have been investigated. Fracture tests were performed on the material over the 24-967 °C temperature range at a low strain rate. The material was found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a98c8eaa291e3987503fc7b44fce112
https://doi.org/10.1016/j.jnucmat.2008.12.182
https://doi.org/10.1016/j.jnucmat.2008.12.182