Zobrazeno 1 - 9
of 9
pro vyhledávání: '"C. I. Oriaku"'
Publikováno v:
Advances in Materials Science and Engineering, Vol 2016 (2016)
Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources, respect
Externí odkaz:
https://doaj.org/article/44bba1b664fb48aa9875ce44814616f9
Publikováno v:
Advances in Materials Science and Engineering, Vol 2016 (2016)
Thin films of CdTe semiconductor were electrochemically deposited using two-electrode and three-electrode configurations in potentiostatic mode for comparison. Cadmium sulphate and tellurium dioxide were used as cadmium and tellurium sources respecti
In this paper, we calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N\ud leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation and\ud further reduces the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dc756d079069ecdf71f842f67499e89
Autor:
Mauro Pereira, C. I. Oriaku
In this paper we introduce analytical solutions of interband polarization, which is the self-energy of the Dyson equation for the photon Green’s functions, and apply them to studying photoluminescence of Coulomb-correlated semiconductor materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5680f1fde953e859a7ba8b661870749
Autor:
C. I. Oriaku, Mauro Pereira
Publikováno v:
2015 17th International Conference on Transparent Optical Networks (ICTON).
In this paper, we calculate the luminescence of the dilute quaternary InAs 1−x−y N x Sb y semiconductor using a microscopic approach. The theory starts with the band anticrossing model applied to both conduction and the valence band to generate i
Autor:
Mauro Pereira, C. I. Oriaku
This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dd886b79fa74bcaec9534a2245eda6e
https://shura.shu.ac.uk/9583/1/Pereira_Simulation_of_mid_infrared_emission_of_dilute_nitride_semiconductors.pdf
https://shura.shu.ac.uk/9583/1/Pereira_Simulation_of_mid_infrared_emission_of_dilute_nitride_semiconductors.pdf
Autor:
C. I. Oriaku, Mauro Pereira
Publikováno v:
SPIE Proceedings.
In this paper, analytical expressions for optical nonlinearities are applied in the simulations of the absorption and photoluminescence of mid infrared materials. The fast and efficient approximations reproduce recent experimental data for dilute nit
Autor:
C. I. Oriaku, Mauro Pereira
Publikováno v:
2014 16th International Conference on Transparent Optical Networks (ICTON).
In this paper, we apply a recently developed approximation for the full many-body problem of light emission from semiconductors to describe the luminescence of mid infrared dilute nitride materials.
Publikováno v:
Optical and Quantum Electronics. 49(3)
This paper combines analytical approximations for the optical absorption and luminescence of semiconductors with Trust Region-Reflective (TRR) methods methods, delivering a robust numerical characterization method to be used in the study of new bulk