Zobrazeno 1 - 10
of 53
pro vyhledávání: '"C. Himwas"'
Akademický článek
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Autor:
Fabien Bayle, Andrea Cattoni, Jean-Christophe Harmand, Valerio Piazza, Laurent Travers, C. Himwas, Maria Tchernycheva, Gilles Patriarche, Stéphane Collin, Fabrice Oehler, Omar Saket, François H. Julien
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (14), pp.145708. ⟨10.1088/1361-6528/ab62c9⟩
Nanotechnology, Institute of Physics, 2020, 31 (14), pp.145708. ⟨10.1088/1361-6528/ab62c9⟩
International audience; Axial p-n and p-in junctions in GaAs 0.7 P 0.3 nanowires are demonstrated and analysed using electron beam induced current microscopy. Organized self-catalysed nanowire arrays are grown by molecular beam epitaxy on nanopattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89e0f285b7b0bba3fca6091fb4c45265
https://hal.archives-ouvertes.fr/hal-03031146
https://hal.archives-ouvertes.fr/hal-03031146
Autor:
Chanchana Thanachayanont, Songphol Kanjanachuchai, Somsak Panyakeow, Maria Tchernycheva, Visittapong Yordsri, C. Himwas
Publikováno v:
Nanotechnology. 33:095602
We report on the growth, structural, and optical properties of GaAs/GaAsPBi core–shell nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents advantageous optical properties, in particular, for near- and mid-infrared op
Autor:
François H. Julien, Andrea Cattoni, C. Himwas, Maria Tchernycheva, Stéphane Collin, Fabrice Oehler, Omar Saket, Jean-Christophe Harmand
Publikováno v:
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC).
We report the characterization of GaAsP nanowires in view of their photovoltaic applications. The nanowires containing a p-i-n junction were elaborated by molecular beam epitaxy using Be and Si as p- and n- doping impurities. Electron beam induced cu
Autor:
Fabrice Oehler, Omar Saket, François H. Julien, C. Himwas, Fabien Bayle, Maria Tchernycheva, Gilles Patriarche, Jean-Christophe Harmand, Laurent Travers, Andrea Cattoni, Valerio Piazza, Stéphane Collin
Publikováno v:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII.
Today, the record in photovoltaic (PV) conversion efficiency is detained by multi-junction solar cells based on III-V semiconductors. However, the wide adoption of these devices is hindered by their high production cost, especially the expensive III-
Autor:
Thipusa Wongpinij, Somsak Panyakeow, Visittapong Yordsri, Songphol Kanjanachuchai, Chanan Euaruksakul, Chanchana Thanachayanont, C. Himwas, S. Kijamnajsuk
Publikováno v:
Semiconductor Science and Technology. 36:045014
Quaternary alloy GaAsPBi is a novel III–V compound with attractive optical properties and can in principle be grown lattice-matched to GaAs. However, the practical realization of the alloy by metal-organic vapor phase epitaxy and molecular beam epi
Akademický článek
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Autor:
Songphol Kanjanachuchai, Thipusa Wongpinij, Somsak Panyakeow, C. Euaraksakul, C. Himwas, S. Kijamnajsuk, A. Soison
Publikováno v:
Semiconductor Science and Technology. 35:095009
Autor:
Aristide Lemaître, Stéphane Collin, C. Himwas, Pierre Rale, Andrea Scaccabarozzi, Hung-Ling Chen, Fabrice Oehler, Andrea Cattoni, Jean-Christophe Harmand, Maria Tchernycheva, Romaric De Lépinau
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, United States. pp.1697-1701, ⟨10.1109/pvsc.2018.8548260⟩
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, United States. pp.1697-1701, ⟨10.1109/pvsc.2018.8548260⟩
Semiconductor nanostructures open new perspectives for light trapping, lattice-mismatched crystal growth (III-V on Si for instance) and novel transport phenomenon for next generation photovoltaics. The characterization of material properties at the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd32fb660eb3b4570cbbe64774726b9d
https://hal.archives-ouvertes.fr/hal-02415129
https://hal.archives-ouvertes.fr/hal-02415129
Autor:
Fabrice Oehler, C. Himwas, Maria Tchernycheva, Gilles Patriarche, J.C. Harmand, Laurent Travers, P. Rale, François H. Julien, Stéphane Collin, Nicolas Chauvin
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2017, 28 (49), ⟨10.1088/1361-6528/aa9533⟩
Nanotechnology, Institute of Physics, 2017, 28 (49), ⟨10.1088/1361-6528/aa9533⟩
International audience; We report on the structural and optical properties of GaAsP nanowires (NWs) grown by molecular-beam epitaxy. By adjusting the alloy composition in the NWs, the transition energy was tuned to the optimal value required for tand