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pro vyhledávání: '"C. Helton"'
Autor:
Blake W. Nelson, Andrew N. Lemmon, Brian T. DeBoi, Md Maksudul Hossain, H. Alan Mantooth, Christopher D. New, Jared C. Helton
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 1, Pp 499-512 (2020)
Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead
Externí odkaz:
https://doaj.org/article/2ac63d65e626426c965920f659654420
Publikováno v:
IEEE Transactions on Power Electronics. 38:4647-4657
Autor:
Benjamin C. Helton, Jason M. Delfing
Publikováno v:
Journal of Music Teacher Education. 32:57-70
Music teachers commonly lack basic awareness of and skill in navigating various education policy areas. One explanation for this lack of policy acumen is the general absence of policy content within the preservice music teacher curriculum. While musi
Autor:
Benjamin C. Helton
Publikováno v:
Arts Education Policy Review. 122:224-238
Policy can present any number of wicked problems for arts educators and advocates. The complexity of policy accompanied by a general lack of policy dexterity fuels the legitimacy gap between advoca...
Publikováno v:
SAMPE 2022.
Autor:
Benjamin C. Helton
Publikováno v:
International Journal of Music Education. 38:66-78
As the world’s population continues to grow older, retired individuals seek out musical experiences. Many of these musicians are returning to playing in a wind band for the first time in decades, so they are, in essence, beginners again. The learni
Publikováno v:
Reliability Engineering & System Safety. 223:108064
Probability of loss of assured safety (PLOAS) is modeled for weak link (WL)/strong link (SL) systems in which one or more WLs or SLs could potentially degrade into a precursor condition to link failure that will be followed by an actual link failure
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
Silicon carbide (SiC) technology continues to improve, which has led to SiC MOSFETs capable of operating at medium voltage (MV) levels greater than 1.7 kV. These devices are currently being evaluated for use in next-generation MV power electronics. H
Publikováno v:
ASCE-ASME J Risk and Uncert in Engrg Sys Part B Mech Engrg. 7
The use of evidence theory and associated cumulative plausibility functions (CPFs), cumulative belief functions (CBFs), cumulative distribution functions (CDFs), complementary cumulative plausibility functions (CCPFs), complementary cumulative belief